HD1750FX STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
Table 2: Absolute Maximum Ratings Table 3: Thermal Data Table 4: Electrical Characteristics (T case = 25 oC unless otherwise specified) * Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %. Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 1700 V VCEO Collector-Emitter Voltage (IB= 0) 800 V VEBO Emitter-Base Voltage (IC= 0) 10 V IC Collector Current 24 A ICM Collector Peak Current (tp < 5ms) 36 A IB Base Current 12 A IBM Base Peak Current (tp < 5ms) 18 A Ptot Total Dissipation at TC = 25 oC 75 W Vins Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink 2500 V Tstg Storage Temperature -65 to 150 °C TJ Max. Operating Junction Temperature 150 °C Rthj-case Thermal Resistance Junction-Case Max 1.67 oC/W Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) VCE = 1700 V VCE = 1700 V TC = 125 oC 0.2 mA mA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 10 µA VCEO(sus)* Collector-Emitter Sustaining Voltage (IB = 0 ) IC = 10 mA 800 V VEBO Emitter-Base Voltage (IC = 0 ) IE = 10 mA 10 V VCE(sat)* Collector-Emitter Saturation Voltage IC = 12 A IB = 3 A 3 V VBE(sat)* Base-Emitter Saturation Voltage IC = 12 A IB = 3 A 0.95 1.5 V hFE DC Current Gain I C = 1 A VCE = 5 V IC = 12 A VCE = 5 V 6.5 9.5 ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 12 A fh = 31250 Hz IB(on) = 1.9 A IB(off) = -8.1 A VCE(fly) = 1320 V VBE(off) = -2.7 V LBB(off) = 0.8 µH 3.1 350 3.8 500 µs ns ts tf INDUCTIVE LOAD Storage Time Fall Time I C = 6.5 A fh = 100 kHz IB(on) = 1.2 A IB(off) = -5.85 A VCE(fly) = 1220 V VBE(off) = -2.7 V LBB(off) = 0.25 µH 1.7 180 250 µs ns
DIM. mm. MIN. TYP MAX. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 5.45 H 15.30 15.70 L9 1 0 . 2 0 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 ISOWATT218FX MECHANICAL DATA 7627132 B
Figure 5: Revision History Release Date Version Change Designator 30-May-2005 1 Initial Release. 19-Dec-2005 2 New hFE value in table 4
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America