HD12N20L HUIXIN | Alldatasheet

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Technical content

Features

 9.0A, 200V, R DS(on) = 0.28Ω @VGS = 10 V  Low gate charge ( typical 16 nC)  Low Crss ( typical 17 pF)  Fast switching  100% avalanche tested  Improved dv/dt capability  Low level gate drive requirement allowing direct opration from logic drivers Absolute Maximum Ratings TC = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C) 9.0 A - Continuous (TC = 100°C) 5.7 A IDM Drain Current - P ulsed (Note 1) 36 A VGSS Gate-Source Voltage ± 20 V IAR Avalanche Current (Note 1) 9.0 A dv/dt Peak Diode Recovery dv/dt (Note 2) 5.5 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C) 55 W - Derate above 25°C 0.44 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 2.27 °C /W RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W DPAK/TO-252 G S D ! " ! " ! " ! " /G03 /G10 /G1D 6GMK1UL7 HD12N20L Uni tsR θJA Thermal Resistance, Junction-to-Ambient -- 50 °C

(Note 3) (Note 3, 4) (Note 3, 4) (Note 3) Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. ISD ≤ 11.6A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 3. Pulse Test : Pulse width ≤300µs, Duty cycle ≤ 2% 4. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 200 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.14 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 200 V, VGS = 0 V -- -- 1 µA VDS = 160 V, TC = 125°C -- -- 1 0 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.5 A VGS = 5 V, ID = 4.5 A -- 0.22 0.25 0.28 0.32 Ω gFS Forward Transconductance VDS = 30 V, ID = 4.5 A -- 11.6 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 830 1080 pF Coss Output Capacitance -- 120 155 pF Crss Reverse Transfer Capacitance -- 17 22 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 100 V, ID = 11.6 A, RG = 25 Ω -- 15 40 ns tr Turn-On Rise Time -- 190 390 ns td(off) Turn-Off Delay Time -- 60 130 ns tf Turn-Off Fall Time -- 120 250 ns Qg Total Gate Charge VDS = 160 V, ID = 11.6 A, VGS = 5 V -- 16 21 nC Qgs Gate-Source Charge -- 2.8 -- nC Qgd Gate-Drain Charge -- 7.6 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 9.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 36 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9.0 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 11.6 A, dIF / dt = 100 A/µs -- 128 -- ns Qrr Reverse Recovery Charge -- 0.56 -- µC 6GMK2UL7

Figure 12. U n c l a m p e d I n d u c t i v e

Test ircuits and Waveforms

A 6.35 6.80 A1 4.953 5.50 B 9.398 10.50 B1 5.969 6.223 B2 2.60 3.00 B3 0.60 1.016 C 0.45 0.63 D 2.184 2.40 E 2.186 2.386 F1 0.635 0.889 F2 0.68 1.143 h 0.00 0.200 L 6.35 6.80