HCTS164MS_02 INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 3 Micron Radiation Hardened CMOS SOS
  • Total Dose 200K RAD (Si)
  • Dose Rate Survivability >10

12 RAD (Si)/s (20ns Pulse)

  • Dose Rate Upset >10 10 RAD (Si)/s (20ns Pulse)
  • Single Event Ray Upset Rate < 2 x 10 -9 Errors/Bit Day (Typ)
  • LET Threshold >100 MEV-cm 2/mg
  • Latch-Up-Free Under Any Conditions
  • Military Temperature Range: -55 oC to +125oC
  • Significant Power Reduction Compared to LSTTL ICs
  • DC Operating Voltage Range: 4.5V to 5.5V
  • Input Logic Levels -VIL = 0.8 VCC (Max) -VIH = VCC/2 (Min)
  • Input Current Levels Ii ≤5µA at VOL, VOH

Description

The Intersil HCTS164MS is a radiation hardened 8-bit Serial-In/ Parallel-Out Shift Register with asynchronous reset. The HCTS164MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radiation hardened, high-speed, CMOS/SOS Logic Family. August 1995

Ordering Information

PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE HCTS164DMSR -55 oC to +125oC Intersil Class S Equivalent 14 Lead SBDIP HCTS164KMSR -55 oC to +125oC Intersil Class S Equivalent 14 Lead Ceramic Flatpack HCTS164D/Sample +25 oC Sample 14 Lead SBDIP HCTS164K/Sample +25 oC Sample 14 Lead Ceramic Flatpack HCTS164HMSR +25 oCD i e D i e Truth Table OPERATING MODE INPUTS OUTPUTS MR CP DS1 † DS2† Q0 Q1-Q7 R e s e t ( C l e a r ) LXXXL L - L Shift H L L L q0 -q6 HL H L q 0 - q 6 HH L L q 0 - q 6 HH H H q 0 - q 6 H = High Voltage Level L = Low Voltage Level = LOW-to-HIGH clock transition q = Lower case letters indicate the state of the referenced input (or output) one setup time prior to the LOW-to-HIGH clock tran sition † = DS1 and DS2 inputs must be at state one setup prior to CP (rising edge) FN 3386.1 Spec Number 518613 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2002. All Rights Reserved

R CL DQ R CL DQ R CL DQ R CL DQ R CL DQ R CL DQ R CL DQ R CL Spec Number 518613

under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation. TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

  1. All voltages reference to device GND.
  2. For functional tests, VO ≥4.0V is recognized as a logic “1”, and VO ≤0.5V is recognized as a logic “0”.

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

  1. All voltages referenced to device GND.
  2. AC measurements assume RL = 500 Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3.0V.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

  1. The parameters listed in Table 3 are controlled via design or process parameters. Minimum and Maximum Limits are guaranteed, but not

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

  1. All voltages referenced to device GND.
  2. AC measurements assume RL = 500 Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
  3. For functional tests VO ≥4.0V is recognized as a logic “1”, and VO ≤0.5V is recognized as a logic “0”.

TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25 TABLE 6. APPLICABLE SUBGROUPS

  1. Alternate Group A Testing in accordance with Method 5005 of MIL-STD-883 may be exercised.

TABLE 7. TOTAL DOSE IRRADIATION

  1. Except FN Test which will be performed 100% Go/No-Go.

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS

  1. Each pin except VCC and GND will have a resistor of 10K Ω ±5% for static burn-in.
  2. Each pin except VCC and GND will have a resistor of 1K Ω ±5% for dynamic burn-in.

TABLE 9. IRRADIATION TEST CONNECTIONS NOTE: Each pin except VCC and GND will have a resistor of 47K Ω ±5% for Irradiation Testing. Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures.

Q0 (3) Q1 (4) (5) (6) (7) VCC Q7 Q6 (11) Q5 (10) Q4 (9)(8) NC NC (MR)CPGNDQ3Q2 Spec Number 518613 Die Characteristics DIE DIMENSIONS: 95 mils x 95 mils 2.380mm x 2.410mm METALLIZATION: Type: AlSi Metal Thickness: 11k Å ±1kÅ GLASSIVATION: Type: SiO2 Thickness: 13kÅ ±2.6kÅ WORST CASE CURRENT DENSITY: < 2.0 x 105A/cm2 BOND PAD SIZE: 100µm x 100µm 4 mils x 4 mils

All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnishe d by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation

7585 Irvine Center Drive

Irvine, CA 92618 TEL: (949) 341-7000 FAX: (949) 341-7123 Intersil Corporation 2401 Palm Bay Rd. Palm Bay, FL 32905 TEL: (321) 724-7000 FAX: (321) 724-7946 EUROPE Intersil Europe Sarl Ave. William Graisse, 3

1006 Lausanne

TEL: +41 21 6140560 FAX: +41 21 6140579 ASIA Intersil Corporation Unit 1804 18/F Guangdong Water Building

83 Austin Road

TST, Kowloon Hong Kong TEL: +852 2723 6339 FAX: +852 2730 1433 HCTS164MS Spec Number 518613 Intersil Space Level Product Flow - MS Wafer Lot Acceptance, All Lots (including SEM); Method 5007 Gamma Radiation Verification, Each Wafer, 4 Samples/ Wafer, 0 Rejects, Method 1019 100% Nondestructive Bond Pull, Method 2023 Sample Wire Bond Pull Monitor, Method 2011 Sample Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection - Method 2010, Condition A 100% Temperature Cycling, Method 1010, Condition C,

10 Cycles

100% Constant Acceleration Method 2001, Condition per Method 5004 100% PIND, Method 2020, Condition A 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In 1, Method 1015, Condition A or B,

24 Hours Minimum, +125

100% Interim Electrical Test (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Method 1015, Condition A or B, 24 Hours Minimum, + 125oC Minimum 100% Interim Electrical Test 2 (T2) 100% Delta Calculation (T0-T2) 100% PDA 1, Method 5004 (see Notes 1, 2) 100% Dynamic Burn-In, Condition D, 240 Hours, +125 oC or Equivalent per Method 1015 100% Interim Electrical Test 3 (T3) 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (see Note 2) 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (see Note 3) 100% External Visual, Method 2009 Sample Group A, Method 5005 (see Note 4) 100% Data Package Generation (see Note 5) NOTES: 1. Failures from Interim Electrical Test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroups 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A as allowed by MIL-STD-883, Method 5005 may be performed. 5. Data package contains:

  • Cover Sheet (Intersil name and/or logo, PO #, customer part #, lot date code, Intersil part #, lot #, quantity).
  • Wafer lot acceptance report (Method 5007). Includes reproductions of SEM photos with % step coverage. GAMMA Radiation Report. Con- tains cover page, disposition, rad dose, Lot #, test package used, specifications #s, test equipment, etc. radiation read and record data on file at Intersil.
  • X- Ray report and film. Includes pentrameter measurements.
  • Screening, electrical, and group A attributes (screening attributes begin after package seal).
  • Lot serial number sheet (good units serial # and lot #).
  • Variables data (all delta operations). Data is identified by serial number. The data header includes lot # and date of test.
  • The Certification of Conformance is part of the shipping invoice and is not part of the data book. The Certificate of Conformance is signed by an authorized quality representative.