74HC4016 PHILIPS | Alldatasheet
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Technical content
Product specification File under Integrated Circuits, IC06 December 1990 INTEGRATED CIRCUITS 74HC/HCT4016 Quad bilateral switches For a complete data sheet, please also download:
- The IC06 74HC/HCT/HCU/HCMOS Logic Family Specifications
- The IC06 74HC/HCT/HCU/HCMOS Logic Package Information
- The IC06 74HC/HCT/HCU/HCMOS Logic Package Outlines
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4016
FEATURES
- Low “ON” resistance: 160 Ω (typ.) at VCC = 4.5 V 120 Ω (typ.) at VCC = 6.0 V 80 Ω (typ.) at VCC = 9.0 V
- Individual switch controls
- Typical “break before make” built in
- Output capability: non-standard
- ICC category: SSI GENERAL DESCRIPTION The 74HC/HCT4016 are high-speed Si-gate CMOS devices and are pin compatible with the “4016” of the “4000B” series. They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT4016 have four independent analog switches (transmission gates). Each switch has two input/output terminals (Y n,Zn) and an active HIGH enable input (En). When En is connected to VCC , a low bidirectional path between Yn and Zn is established (ON condition). When En is connected to ground (GND), the switch is disabled and a high impedance between Y n and Zn is established (OFF condition). Current through a switch will not cause additional VCC current provided the voltage at the terminals of the switch is maintained within the supply voltage range; V CC >> (VY,VZ) >> GND. Inputs Yn and Zn are electrically equivalent terminals. QUICK REFERENCE DATA GND = 0 V; Tamb = 25°C; tr = tf= 6 ns Notes 1. C PD is used to determine the dynamic power dissipation (PD inµW): PD = CPD × VCC 2 × fi+∑ {( CL + C S)× VCC 2 × fo } where: fi= input frequency in MHz fo = output frequency in MHz ∑ {(CL + C S)× VCC 2 × fo} = sum of outputs C L = output load capacitance in pF C S = max. switch capacitance in pF VCC = supply voltage in V 2. For HC the condition is VI= GND to VCC For HCT the condition is VI= GND to VCC − 1.5 V
ORDERING INFORMATION
See “74HC/HCT/HCU/HCMOS Logic Package Information”. SYMBOL PARAMETER CONDITIONS TYPICAL UNIT HC HCT tPZH / tPZL turn “ON” time En to VOS C L = 15 pF; RL =1 kΩ ; VCC = 5 V 16 17 ns tPHZ / tPLZ turn “OFF” time En to VOS 14 20 ns C I input capacitance 3.5 3.5 pF C PD power dissipation capacitance per switch notes 1 and 2 12 12 pF C S max. switch capacitance 5 5 pF
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4016 PIN DESCRIPTION PIN NO. SYMBOL NAME AND FUNCTION 1, 4, 8, 11 Y 0 to Y3 independent inputs/outputs
7 GND ground (0 V)
2, 3, 9, 10 Z 0 to Z3 independent inputs/outputs 13, 5, 6, 12 E 0 to E3 enable inputs (active HIGH)
14 V CC positive supply voltage
Fig.1 Pin configuration. Fig.2 Logic symbol. Fig.3 IEC logic symbol. (a) (b)
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4016 FUNCTION TABLE Notes 1. H = HIGH voltage level L = LOW voltage level INPUT En CHANNEL IMPEDANCE L H high low Fig.4 Functional diagram.
APPLICATIONS
- Signal gating
- Modulation
- Demodulation
- Chopper Fig.5 Schematic diagram (one switch).
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4016 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Voltages are referenced to GND (ground = 0 V) RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER MIN. MAX. UNIT CONDITIONS VCC DC supply voltage −0.5 +11.0 V ±IIK DC digital input diode current 20 mA for V I<− 0.5 V or VI > VCC + 0.5 V ±ISK DC switch diode current 20 mA for V S <− 0.5 V or VS > VCC + 0.5 V ±IS DC switch current 25 mA for −0.5 V< VS < VCC + 0.5 V ±ICC ; ±IGND DC V CC or GND current 50 mA Tstg storage temperature range −65 +150 °C Ptot power dissipation per package for temperature range: −40 to+125 °C 74HC/HCT plastic DIL 750 mW above +70 °C: derate linearly with 12 mW/K plastic mini-pack (SO) 500 mW above +70 °C: derate linearly with 8 mW/K PS power dissipation per switch 100 mW SYMBOL PARAMETER 74HC 74HCT UNIT CONDITIONS VI DC input voltage range GND V CC GND V CC V VS DC switch voltage range GND V CC GND V CC V Tamb operating ambient temperature range−40 +85 −40 +85 °C see DC and AC CHARACTERIS- TICS Tamb operating ambient temperature range−40 +125 −40 +125 °C 1000 V CC = 2.0 V tr,tf input rise and fall times 6.0 500 400 250 6.0 500 ns V CC = 4.5 V VCC = 6.0 V VCC = 10.0 V
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4016 DC CHARACTERISTICS FOR 74HC/HCT For 74HC: V CC = 2.0, 4.5, 6.0 and 9.0 V For 74HCT: VCC = 4.5 V Notes to the DC Characteristics 1. At supply voltages approaching 2.0 V the analog switch ON-resistance becomes extremely non-linear. Therefore it is recommended that these devices be used to transmit digital signals only, when using these supply voltages. 2. For test circuit measuring RON see Fig.6. SYMBOL PARAMETER Tamb (°C) UNIT TEST CONDITIONS 74HC/HCT VCC (V) IS (µA) Vis VI+25 −40 to+85 −40 to+125 R ON ON resistance (peak) − 160 120 320 240 170 400 300 213 480 360 255 Ω Ω Ω Ω 2.0 4.5 6.0 9.0 100 1000 1000 1000 V CC to GND VIH or VIL R ON ON resistance (rail) 160 160 140 120 200 175 150 240 210 180 Ω Ω Ω Ω 2.0 4.5 6.0 9.0 100 1000 1000 1000 GND V IH or VIL R ON ON resistance (rail) 170 180 160 135 225 200 170 270 240 205 Ω Ω Ω Ω 2.0 4.5 6.0 9.0 100 1000 1000 1000 V CC VIH or VIL ΔR ON maximum ΔON resistance between any two channels Ω Ω Ω Ω 2.0 4.5 6.0 9.0 V CC to GND VIH or VIL Fig.6 Test circuit for measuring RON . Fig.7 Test circuit for measuring OFF-state current.
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4016 Fig.8 Test circuit for measuring ON-state current. Fig.9 Typical RON as a function of input voltage Visfor Vis= 0 to VCC .
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4016 DC CHARACTERISTICS FOR 74HC Voltages are referenced to GND (ground = 0 V) AC CHARACTERISTICS FOR 74HC GND = 0 V; tr =tf= 6 ns; CL = 50 pF SYMBOL PARAMETER Tamb (°C) UNIT TEST CONDITIONS 74HC VCC (V) VI OTHER +25 −40 to+85 −40 to+125 VIH HIGH level input voltage 1.5 3.15 4.2 6.3 1.2 2.4 3.2 4.3 1.5 3.15 4.2 6.3 1.5 3.15 4.2 6.3 V 2.0 4.5 6.0 9.0 V IL LOW level input voltage 0.8 2.1 2.8 4.3 0.50 1.35 1.80 2.70 0.50 1.35 1.80 2.70 0.50 1.35 1.80 2.70 V 2.0 4.5 6.0 9.0 I input leakage current 0.1 0.2 1.0 2.0 1.0 2.0 µA 6.0 10.0 VCC or GND ±IS analog switch OFF-state current per channel 0.1 1.0 1.0 µA 10.0 V IH or VIL VS = VCC − GND (see Fig.7) ±IS analog switch ON-state current 0.1 1.0 1.0 µA 10.0 V IH or VIL VS = VCC − GND (see Fig.8) ICC quiescent supply current 2.0 4.0 20.0 40.0 40.0 80.0 µA 6.0 10.0 VCC or GND Vis= GND or VCC ;Vos = VCC or GND SYMBOL PARAMETER Tamb (°C) UNIT TEST CONDITIONS 74HC VCC (V) OTHER +25 −40 to+85 −40 to+125 tPHL / tPLH propagation delay Visto Vos ns 2.0 4.5 6.0 9.0 R L = ∞ ;C L = 50 pF (see Fig.16) tPZH / tPZL turn “ON” time En to Vos 190 240 235 ns 2.0 4.5 6.0 9.0 R L =1 kΩ ;C L = 50 pF (see Figs 17 and 18) tPHZ / tPLZ turn “OFF” time En to Vos 145 180 220 ns 2.0 4.5 6.0 9.0 R L =1 kΩ ;C L = 50 pF (see Figs 17 and 18)
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4016 DC CHARACTERISTICS FOR 74HCT Voltages are referenced to GND (ground = 0 V) Note 1. The value of additional quiescent supply current (ΔICC ) for a unit load of 1 is given here. To determineΔICC per input, multiply this value by the unit load coefficient shown in the table below. SYMBOL PARAMETER Tamb (°C) UNIT TEST CONDITIONS 74HCT VCC (V) VI OTHER +25 −40 to+85 −40 to+125 VIH HIGH level input voltage to 5.5 V IL LOW level input voltage to 5.5 I input leakage current 0.1 1.0 1.0 µA 5.5 V CC or GND ±IS analog switch OFF-state current per channel 0.1 1.0 1.0 µA 5.5 V IH or VIL VS = VCC − GND (see Fig.7) ±IS analog switch ON-state current 0.1 1.0 1.0 µA 5.5 V IH or VIL VS = VCC − GND (see Fig.8) ICC quiescent supply current 2.0 20.0 40.0 µA 4.5 to 5.5 V CC or GND Vis= GND or VCC ;Vos = VCC or GND ΔICC additional quiescent supply current per input pin for unit load coefficient is 1 (note 1) 100 360 450 490 µA 4.5 to 5.5 V CC −2.1V other inputs at VCC or GND INPUT UNIT LOAD COEFFICIENT EN 1.00
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4016 AC CHARACTERISTICS FOR 74HCT GND = 0 V; tr =tf= 6 ns; CL = 50 pF ADDITIONAL AC CHARACTERISTICS FOR 74HC/HCT Recommended conditions and typical values GND = 0 V; tr =tf= 6 ns Notes 1. V isis the input voltage at a Yn or Zn terminal, whichever is assigned as an input. 2. V os is the output voltage at a Yn or Zn terminal, whichever is assigned as an output. 3. Adjust input voltage Visto 0 dBm level (0 dBm = 1 mW into 600Ω ). 4. Adjust input voltage Visto 0 dBm level at Vos for 1 MHz (0 dBm = 1 mW into 50Ω ). SYMBOL PARAMETER Tamb (°C) UNIT TEST CONDITIONS 74HCT VCC (V) OTHER +25 −40 to+85 −40 to+125 tPHL / tPLH propagation delay Visto Vos 6 12 15 18 ns 4.5 R L = ∞ ;C L = 50 pF (see Fig.16) tPZH turn “ON” time En to Vos 19 35 44 53 ns 4.5 R L =1 kΩ ;C L = 50 pF (see Figs 17 and 18) tPZL turn “ON” time En to Vos 20 35 44 53 ns 4.5 R L =1 kΩ ;C L = 50 pF (see Figs 17 and 18) tPHZ / tPLZ turn “OFF” time En to Vos 23 35 44 53 ns 4.5 R L =1 kΩ ;C L = 50 pF (see Figs 17 and 18) SYMBOL PARAMETER typ. UNIT VCC (V) Vis(p-p) (V) CONDITIONS sine-wave distortion f = 1 kHz 0.80 0.40 4.5 9.0 4.0 8.0 R L = 10 kΩ ;C L = 50 pF (see Fig.14) sine-wave distortion f = 10 kHz 2.40 1.20 4.5 9.0 4.0 8.0 R L = 10 kΩ ;C L = 50 pF (see Fig.14) switch “OFF” signal feed-through −50 −50 dB dB 4.5 9.0 note 3 R L = 600Ω ;C L = 50 pF; f = 1 MHz (see Figs 10 and 15) crosstalk between any two switches −60 −60 dB dB 4.5 9.0 note 3 R L = 600Ω ;C L = 50 pF; f = 1 MHz (see Fig.12) V(p-p) crosstalk voltage between enable or address input to any switch (peak-to-peak value) 110 220 mV mV 4.5 9.0 R L = 600Ω ;C L = 50 pF; f = 1 MHz (En, square wave between VCC and GND, tr =tf= 6 ns) (see Fig.13) fmax minimum frequency response (−3dB) 150 160 MHz MHz 4.5 9.0 note 4 R L =5 0Ω ;C L = 10 pF (see Figs 11 and 14) C S maximum switch capacitance 5 pF
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4016 Fig.10 Typical switch “OFF” signal feed-through as a function of frequency. Test conditions: VCC = 4.5 V; GND = 0 V; R L =5 0Ω ;R source=1 kΩ . Fig.11 Typical frequency response. Test conditions: VCC = 4.5 V; GND = 0 V; R L =5 0Ω ;R source=1 kΩ .
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4016 Fig.12 Test circuit for measuring crosstalk between any two switches. (a) channel ON condition; (b) channel OFF condition. Fig.13 Test circuit for measuring crosstalk between control and any switch. The crosstalk is defined as follows (oscilloscope output): Fig.14 Test circuit for measuring sine-wave distortion and minimum frequency response. Fig.15 Test circuit for measuring switch “OFF” signal feed-through.
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4016 AC WAVEFORMS Fig.16 Waveforms showing the input (Vis) to output (Vos) propagation delays. (1) HC : VM = 50%; VI= GND to VCC . HCT: VM = 1.3 V; VI= GND to 3 V. Fig.17 Waveforms showing the turn-ON and turn-OFF times. (1) HC : VM = 50%; VI= GND to VCC . HCT: VM = 1.3 V; VI= GND to 3 V.
Philips Semiconductors Product specification Quad bilateral switches 74HC/HCT4016 TEST CIRCUIT AND WAVEFORMS PACKAGE OUTLINES See “74HC/HCT/HCU/HCMOS Logic Package Outlines”. Fig.18 Test circuit for measuring AC performance. Conditions TEST SWITCH V is tPZH tPZL tPHZ tPLZ others GND VCC GND V CC open VCC GND VCC GND pulse C L = load capacitance including jig and probe capacitance (see AC CHARACTERISTICS for values). R T = termination resistance should be equal to the output impedance ZO of the pulse generator. tr =tf= 6 ns; when measuring fmax , there is no constraint tr,tfwith 50% duty factor. FAMILY AMPLITUDE V M tr;tf fmax ; PULSE WIDTH OTHER 74HC 74HCT VCC 3.0 V 50% 1.3 V < 2 ns < 2 ns 6 ns 6 ns Fig.19 Input pulse definitions. FAMILY AMPLITUDE V M tr;tf fmax ; PULSE WIDTH OTHER 74HC 74HCT VCC 3.0 V 50% 1.3 V < 2 ns < 2 ns 6 ns 6 ns C L = load capacitance including jig and probe capacitance (see AC CHARACTERISTICS for values). R T = termination resistance should be equal to the output impedance ZO of the pulse generator. tr =tf= 6 ns; when measuring fmax , there is no constraint tr,tfwith 50% duty factor.