HCS32MS RENESAS | Alldatasheet

Document overview

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  • PDF pages: 11

Technical content

Features

  • 3 Micron Radiation Hardened SOS CMOS
  • Total Dose 200k RAD (Si)
  • SEP Effective LET No Upsets: >100 MEV-cm2/mg
  • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
  • Latch-Up Free Under Any Conditions
  • Military Temperature Range: -55°C to +125°C
  • Significant Power Reduction Compared to LSTTL ICs
  • DC Operating Voltage Range: 4.5V to 5.5V
  • Input Logic Levels IL = 30% of VCC Max
  • V IH = 70% of VCC Min
  • Input Current Levels Ii  5µA @ VOL, VOH Functional Diagram

Ordering Information

TEMP. RANGE (°C) PACKAGE PKG. DWG. # HCS32DMSR Q 5962R95 78101VCC -55°C to +125°C 14 Ld SBDIP D14.3 HCS32KMSR Q 5962R95 78101VXC -55°C to +125°C 14 Ld Ceramic Flatpack K14.A HCS32D/ Sample +25°C 14 Ld SBDIP HCS32K/ Sample +25°C 14 Ld Ceramic Flatpack HCS32HMSR +25°C Die Intersil Pb-free hermetic packaged products employ SnAgCu or Au termination finish, which are RoHS compliant termination finishes and compatible with both SnPb and Pb-free soldering operations. Ceramic dual in-line packaged products (CerDIPs) do contain lead (Pb) in the seal glass and die attach glass materials. However, lead in the glass materials of electronic components are currently exempted per the RoHS directive. Therefore, ceramic dual inline packages with Pb-free termination finish are considered to be RoHS compliant. TABLE 1. TRUTH TABLE

FN3057 Rev 1.00 Page 2 of 11 April 11, 2007 Pinouts HCS32MS

14 LD SBDIP

14 LD CERAMIC FLATPACK

FN3057 Rev 1.00 Page 3 of 11 April 11, 2007 Absolute Maximum Ratings Thermal Information (All Voltage Reference to the VSS Terminal) Operating Conditions Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . 100ns/V Max Thermal Resistance (Notes 1, 2) JA JC Maximum Package Power Dissipation at +125°C Ambient If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 2. For JC, the “case temp” location is the center of the exposed metal pad on the package underside. PARAMETER SYMBOL TEST CONDITIONS GROUP A SUBGROUPS TEMP (°C) LIMITS MIN MAX UNITS Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND 1+ 2 5 - 1 0 A Output Current (Sink) IOL VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V 1 +25 4.8 - mA Output Current (Source) IOH VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V 1+ 2 5 - 4 . 8 - m A Output Voltage Low VOL VCC = 4.5V, VIH = 3.15V, IOL = 50A, VIL = 1.35V VCC = 5.5V, VIH = 3.85V, IOL = 50A, VIL = 1.65V Output Voltage High VOH VCC = 4.5V, VIH = 3.15V, IOH = -50A, VIL = 1.35V VCC = 5.5V, VIH = 3.85V, IOH = -50A, VIL = 1.65V Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND 1+ 2 5 - 0.5 A Noise Immunity Functional Test FN VCC = 4.5V, VIH = 0.70 (VCC), VIL = 0.30(VCC), (Note 3) NOTES: 3. This is just to show continuing notes in the document. 4. This is a row format electrical spec table.

FN3057 Rev 1.00 Page 4 of 11 April 11, 2007 PARAMETER SYMBOL TEST CONDITIONS (NOTES 5, 6) GROUP A SUBGROUPS TEMP (°C) LIMITS UNITSMIN MAX Input to Output TPHL VCC = 4.5V 9 +25 2 18 ns 10, 11 +125, -55 2 20 ns Data to Output TPLH VCC = 4.5V 9 +25 2 20 ns 10, 11 +125, -55 2 22 ns NOTES: 5. All voltages referenced to device GND. 6. AC measurements assume RL = 500, CL = 50pF, Input tr = tf = 3ns, VIL = GND, VIH = VCC. Electrical Performance Characteristics PARAMETER SYMBOL TEST CONDITIONS NOTES TEMP (°C) LIMITS UNITSMIN MAX Capacitance Power Dissipation CPD VCC = 5.0V, f = 1MHz 7 +25 - 6 pF 7 +125, -55 - 11 pF Input Capacitance CIN VCC = 5.0V, f = 1MHz 7 +25 - 10 pF Output Transition Time TTHL TTLH VCC = 4.5V 7 +25 - 15 ns 7 +125 - 22 ns NOTES: 7. The parameters listed in the Electrical Performance Characteristics are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. DC Post Radiation Electrical Performance Characteristics PARAMETER SYMBOL (NOTES 8, 9) TEST CONDITIONS TEMPERATURE (°C) 200k RAD LIMITS UNITSMIN MAX Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND +25 - 0.2 mA Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V +25 4.0 - mA Output Current (Source) IOH V CC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V +25 -4.0 - mA Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), IOL = 50A +25 - 0.1 V Output Voltage High VOH VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), IOH = -50A +25 VCC - 0.1 - V Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25 - 5 A Noise Immunity Functional Test FN VCC = 4.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), (Note 10) +25 - - -

FN3057 Rev 1.00 Page 5 of 11 April 11, 2007 Data to Output TPHL VCC = 4.5V +25 2 20 ns TPLH VCC = 4.5V +25 2 22 ns NOTES: 8. All voltages referenced to device GND. 9. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. 10. For functional tests VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”. DC Post Radiation Electrical Performance Characteristics (Continued) Operating Specifications PARAMETER GROUP B SUBGROUP DELTA LIMIT ICC 5 3 A IOL/IOH 5 -15% of 0 Hour Applicable Subgroups CONFORMANCE GROUPS METHOD GROUP A SUBGROUPS READ AND RECORD Initial Test (Preburn-In) 100%/5004 1, 7, 9 ICC, IOL/H Interim Test I (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H Interim Test II (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H PDA 100%/5004 1, 7, 9, Deltas Interim Test III (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H PDA 100%/5004 1, 7, 9, Deltas Final Test 100%/5004 2, 3, 8A, 8B, 10, 11 Group A (Note 11) Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Group B Subgroup B-5 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, De ltas Subgroups 1, 2, 3, 9, 10, 11, (Note 12) Subgroup B-6 Sample/5005 1, 7, 9 Group D Sample/5005 1, 7, 9 NOTES: 11. Alternate group A inspection in accordance with method 5005 of MIL-STD-883 may be exercised. 12. Burn-In and Operating Life Test, Delta Parameters (+25°C) only.

FN3057 Rev 1.00 Page 6 of 11 April 11, 2007 Total Dose Irradiation CONFORMANCE GROUPS METHOD TEST READ AND RECORD PRE RAD POST RAD PRE RAD POST RAD Group E Subgroup 2 5005 1, 7, 9 DC Post Radiation Electrical Performance Characteristics on page 4 1, 9 DC Post Radiation Electrical Performance Characteristics on page 4 (Note 13) NOTES: 13. Except FN test which will be performed 100% Go/No-Go. Static And Dynamic Burn-In Test Connections OPEN GROUND 1/2 VCC = 3V  0.5V VCC = 6V  0.5V OSCILLATOR 50kHz 25kHz STATIC BURN-IN I TEST CONNECTIONS (Note 14) -1 4 - - STATIC BURN-IN II TEST CONNECTIONS (Note 14) DYNAMIC BURN-IN TEST CONNECTIONS (Note 15) NOTES: 14. Each pin except VCC and GND will have a resistor of 10k  5% for static burn-in 15. Each pin except VCC and GND will have a resistor of 1k  5% for dynamic burn-in Irradiation Test Conditions OPEN GROUND VCC = 5V ± 0.5V NOTES: 16. Each pin except VCC and GND will have a resistor of 47K  5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.

FN3057 Rev 1.00 Page 7 of 11 April 11, 2007 Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019,

4 Samples/Wafer, 0 Rejects

100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method 2011 Sample - Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection, Method 2010, Condition A 100% Temperature Cycle, Method 1010, Condition C,

10 Cycles

100% Constant Acceleration, Method 2001, Condition per Method 5004 100% PIND, Method 2020, Condition A 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125°C min., Method 1015 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125°C min., Method 1015 100% Interim Electrical Test 2 (T2) 100% Delta Calculation (T0-T2) 100% PDA 1, Method 5004 (Notes 17 and 18) 100% Dynamic Burn-In, Condition D, 240 hrs., +125°C or Equivalent, Method 1015 100% Interim Electrical Test 3 (T3) 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 18) 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 19) 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 20) 100% Data Package Generation (Note 21) NOTES: 17. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 18. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 19. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 20. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 21. Data Package Contents:

  • Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity).
  • Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.
  • GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil.
  • X-Ray report and film. Includes penetrometer measurements.
  • Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
  • Lot Serial Number Sheet (Good units serial number and lot number).
  • Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test.
  • The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative.

TABLE 1. AC VOLTAGE LEVELS

FN3057 Rev 1.00 Page 9 of 11 April 11, 2007 Die Characteristics DIE DIMENSIONS: 87milsx88 mils 2.20mmx2.2mm METALLIZATION: Type: SiAl Metal Thickness: 11k Å 1kÅ GLASSIVATION: Type: SiO2 Thickness: 13kÅ  2.6kÅ WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 100m x 100m 4milsx4mils Metallization Mask Layout HCS32MS A1 VCC B4 B1 (2) Y1 (3) A2 (4) B2 (5) (6) (7) (8) (9) A3 (10) B3 (11) Y4 (12) A4 (1) (14) (13) Y2 GND Y3

FN3057 Rev 1.00 Page 10 of 11 April 11, 2007 Ceramic Metal Seal Flatpack Packages (Flatpack) NOTES: 1. Index area: A notch or a pin one identification mark shall be locat- ed adjacent to pin one and shall be located within the shaded area shown. The manufacturer’s identification shall not be used as a pin one identification mark. Alternately, a tab (dimension k) may be used to identify pin one. 2. If a pin one identification mark is used in addition to a tab, the lim- its of dimension k do not apply. 3. This dimension allows for off-center lid, meniscus, and glass overrun. 4. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness. The maximum lim- its of lead dimensions b and c or M shall be measured at the cen- troid of the finished lead surfac es, when solder dip or tin plate lead finish is applied. 5. N is the maximum number of terminal positions. 6. Measure dimension S1 at all four corners. 7. For bottom-brazed lead packages, no organic or polymeric mate- rials shall be molded to the bottom of the package to cover the leads. 8. Dimension Q shall be measured at the point of exit (beyond the meniscus) of the lead from the body. Dimension Q minimum shall be reduced by 0.0015 inch (0.038mm) maximum when sol- der dip lead finish is applied. 9. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 10. Controlling dimension: INCH. -D- -C-

0.004 H A - BM DS S

-A- -B-

0.036 H A - BM DS S

e E A Q L D A SEATING AND LE2 E3 E3 BASE PLANE -H- b C M (c) (b) SECTION A-A BASE LEAD FINISH METAL PIN NO. 1 ID AREA A M K14.A MIL-STD-1835 CDFP3-F14 (F-2A, CONFIGURATION B)

14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE

A 0.045 0.115 1.14 2.92 - b 0.015 0.022 0.38 0.56 - b1 0.015 0.019 0.38 0.48 - c 0.004 0.009 0.10 0.23 - c1 0.004 0.006 0.10 0.15 - D - 0.390 - 9.91 3 E 0.235 0.260 5.97 6.60 - E 1 -0 . 2 9 0-7 . 1 13 E3 0.030 - 0.76 - 7 e 0.050 BSC 1.27 BSC - k 0.008 0.015 0.20 0.38 2 L 0.270 0.370 6.86 9.40 - Q 0.026 0.045 0.66 1.14 8 S1 0.005 - 0.13 - 6 N1 4 1 4- Rev. 0 5/18/94

FN3057 Rev 1.00 Page 11 of 11 April 11, 2007 HCS32MS Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted in the quality certifications found at www.intersil.com/en/support/qualandreliability.html Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com For additional products, see www.intersil.com/en/products.html © Copyright Intersil Americas LLC 1995-2007. All Rights Reserved. All trademarks and registered trademarks are the property of their respective owners. Ceramic Dual-In-Line Metal Seal Packages (SBDIP) NOTES: 1. Index area: A notch or a pin one identification mark shall be locat- ed adjacent to pin one and shall be located within the shaded area shown. The manufacturer’s identification shall not be used as a pin one identification mark. 2. The maximum limits of lead di mensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied. 3. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness. 4. Corner leads (1, N, N/2, and N/2+1) may be configured with a partial lead paddle. For this configuration dimension b3 replaces dimension b2. 5. Dimension Q shall be measured from the seating plane to the base plane. 6. Measure dimension S1 at all four corners. 7. Measure dimension S2 from the top of the ceramic body to the nearest metallization or lead. 8. N is the maximum number of terminal positions. 9. Braze fillets shall be concave. 10. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 11. Controlling dimension: INCH. bbb C A - BS c Q L A SEATING BASE D PLANE PLANE S S -D--A- -C- eA -B- aaa C A - BM DS Sccc C A - BM DS S D E b A e M (c) (b) SECTION A-A BASE LEAD FINISH METAL eA/2 M A D14.3 MIL-STD-1835 CDIP2-T14 (D-1, CONFIGURATION C)

14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE

A - 0.200 - 5.08 - b 0.014 0.026 0.36 0.66 2 b1 0.014 0.023 0.36 0.58 3 b2 0.045 0.065 1.14 1.65 - b3 0.023 0.045 0.58 1.14 4 c 0.008 0.018 0.20 0.46 2 c1 0.008 0.015 0.20 0.38 3 E 0.220 0.310 5.59 7.87 - e 0.100 BSC 2.54 BSC - eA 0.300 BSC 7.62 BSC - eA/2 0.150 BSC 3.81 BSC - L 0.125 0.200 3.18 5.08 - Q 0.015 0.060 0.38 1.52 5 S1 0.005 - 0.13 - 6 S2 0.005 - 0.13 - 7  90o 105o 90o 105o - aaa - 0.015 - 0.38 - bbb - 0.030 - 0.76 - ccc - 0.010 - 0.25 - M - 0.0015 - 0.038 2 N1 4 1 4 8 Rev. 0 4/94