HCS154MS RENESAS | Alldatasheet

Document overview

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  • PDF pages: 8

Technical content

Features

  • 3 Micron Radiation Hardened SOS CMOS
  • Total Dose 200k RAD (Si)
  • SEP Effective LET No Upsets: >100 MEV-cm 2/mg
  • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
  • Dose Rate Survivability: >1 x 1012 Rads (Si)/s
  • Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse
  • Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day (Typ)
  • Latch-Up Free Under Any Conditions
  • Military Temperature Range: -55 oC to +125oC
  • Significant Power Reduction Compared to LSTTL ICs
  • DC Operating Voltage Range: 4.5V to 5.5V
  • Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min
  • Input Current Levels Ii  5µA at VOL, VOH Pin Configurations

24 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T24 TOP VIEW

24 LEAD CERAMIC METAL SEAL

FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F24 TOP VIEW GND VCCY0 Y10 Y11 Y12 Y13 Y14 Y15 GND Y Y10 VCC Y11 Y12 Y13 Y14 Y15 E

Ordering Information

MKT. NUMBER PART MARKING TEMP. RANGE (°C) SCREENING LEVEL PACKAGE PKG. DWG. # 5962R9572901VJC HCS154DMSR Q 5962R95 72901VJC -55 oC to +125oC Intersil Class S Equivalent 24 Ld SBDIP D24.6 5962R9572901VXC HCS154KMSR Q 5962R95 72901VXC -55 oC to +125oC Intersil Class S Equivalent 24 Ld Ceramic Flatpack K24.A

TABLE 1. TRUTH TABLE

FN2479 Rev 3.00 Page 3 of 8 January 6, 2011 Absolute Maximum Ratings Reliability Information (All Voltage Reference to the VSS Terminal) Thermal Resistance  JA JC Maximum Package Power Dissipation at +125oC Ambient If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: Operating Conditions MaxOperating Temperature Range (T CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adv ersely impact product reliability and result in failures not covered by warranty. SYMBOL PARAMETERS CONDITIONS (Note 1) GROUP A SUBGROUPS TEMPERATURE LIMITS UNITSMIN MAX ICC Quiescent Current VCC = 5.5V, VIN = VCC or GND 1 +25°C - 40 µA IOL Output Current (Sink) VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V 1 +25°C 4.8 - mA IOH Output Current (Source) VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V 1 +25°C -4.8 - mA VOL Output Voltage Low VCC = 4.5V, VIH = 3.15V, IOL = 50A, VIL = 1.35V VCC = 5.5V, VIH = 3.85V, IOL = 50A, VIL = 1.65V VOH Output Voltage High VCC = 4.5V, VIH = 3.15V, IOH = -50A, VIL = 1.35V -0.1 VCC = 5.5V, VIH = 3.85V, IOH = -50A, VIL = 1.65V -0.1 IIN Input Leakage Current VCC = 5.5V, VIN = VCC or GND 1 +25°C - 0.5 µA FN Noise Immunity Functional Test VCC = 4.5V, VIH = 0.70(VCC), (Note 2) VIL = 0.30(VCC) NOTES: 1. All voltages reference to device GND. 2. For functional tests, VO  4.0V is recognized as a logic “1”, and VO  0.5V is recognized as a logic “0”.

FN2479 Rev 3.00 Page 4 of 8 January 6, 2011 SYMBOL PARAMETER CONDITIONS (Notes 3, 4) GROUP A SUBGROUPS TEMPERATURE LIMITS UNITSMIN MAX TPLH Address to Output VCC = 4.5V 9 +25°C 2 29 ns 10, 11 +125°C, -55°C 2 34 ns TPHL VCC = 4.5V 9 +25°C 2 27 ns 10, 11 +125°C, -55°C 2 31 ns TPLH TPHL Enable to Output VCC = 4.5V 9 +25°C 2 27 ns 10, 11 +125°C, -55°C 2 27 ns NOTES: 3. All voltages referenced to device GND. 4. AC measurements assume RL = 500 , CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. Electrical Specifications The following parameters are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. SYMBOL PARAMETER CONDITIONS NOTES TEMPERATURE LIMITS UNITSMIN MAX CPD Capacitance Power Dissipation VCC = 5.0V, f = 1MHz 1 +25°C - 66 pF CIN Input Capacitance VCC = 5.0V, f = 1MHz 1 +25°C - 10 pF 1 +125°C - 10 pF TTHL TTLH Output Transition Time VCC = 4.5V 1 +25°C - 15 ns 1 +125°C - 22 ns DC Post Radiation Electrical Performance Characteristics SYMBOL PARAMETERS CONDITIONS (Notes 5, 6) TEMPERATURE 200k RAD LIMITS UNITSMIN MAX ICC Quiescent Current V CC = 5.5V, VIN = VCC or GND +25°C - 0.75 mA IOL Output Current (Sink) VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V +25°C 4.0 - mA IOH Output Current (Source) VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V +25°C -4.0 - mA VOL Output Voltage Low VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), IOL = 50A +25°C - 0.1 V VOH Output Voltage High VCC = 4.5V or 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), IOH = -50A +25°C VCC -0.1 IIN Input Leakage Current VCC = 5.5V, VIN = VCC or GND +25°C - 5µ A FN Noise Immunity Functional Test VCC = 4.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), (Note 7) + 2 5 ° C --- TPLH Address to Output VCC = 4.5V +25°C 2 34 ns TPHL VCC = 4.5V +25°C 2 31 ns TPLH TPHL Enable to Output VCC = 4.5V +25°C 2 27 ns NOTES: 5. All voltages referenced to device GND. 6. AC measurements assume RL = 500 , CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. 7. For functional tests, VO  4.0V is recognized as a logic “1”, and VO  0.5V is recognized as a logic “0”.

TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25°C) TABLE 6. APPLICABLE SUBGROUPS

  1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised.

TABLE 7. TOTAL DOSE IRRADIATION

  1. Except FN test which will be performed 100% Go/No-Go.

TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS

  1. Each pin except VCC and GND will have a resistor of 10k  5% for static burn-in.
  2. Each pin except VCC and GND will have a resistor of 1k  5% for dynamic burn-in.

TABLE 9. IRRADIATION TEST CONNECTIONS

FN2479 Rev 3.00 Page 6 of 8 January 6, 2011 Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019,

4 Samples/Wafer, 0 Rejects

100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method 2011 Sample - Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection, Method 2010, Condition A 100% Temperature Cycle, Method 1010, Condition C,

10 Cycles

100% Constant Acceleration, Method 2001, Condition per Method 5004 100% PIND, Method 2020, Condition A 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125°C min., Method 1015 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125°C min., Method 1015 100% Interim Electrical Test 2 (T2) 100% Delta Calculation (T0-T2) 100% PDA 1, Method 5004 (Notes 12 and 13) 100% Dynamic Burn-In, Condition D, 240 hrs., +125°C or Equivalent, Method 1015 100% Interim Electrical Test 3 (T3) 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 13) 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 14) 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 15) 100% Data Package Generation (Note 16) NOTES: 12. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 13. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 14. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 15. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 16. Data Package Contents:

  • Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Num- ber, Quantity).
  • Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.
  • GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil.
  • X-Ray report and film. Includes penetrometer measurements.
  • Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
  • Lot Serial Number Sheet (Good units serial number and lot number).
  • Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test.
  • The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative.

otherwise under any patent or patent rights of Intersil or its subsidiaries. © Copyright Intersil Americas LLC 1995-2011. All Rights Reserved. All trademarks and registered trademarks are the property of their respective owners. TABLE 10. AC VOLTAGE LEVELS

FN2479 Rev 3.00 Page 8 of 8 January 6, 2011 Die Characteristics DIE DIMENSIONS: 85 x 101 mils 2.16 x 2.57mm METALLIZATION: Type: AlSi Metal Thickness: 11k Å 1kÅ GLASSIVATION: Type: SiO2 Thickness: 13kÅ  2.6kÅ WORST CASE CURRENT DENSITY: 2.0 x 105A/cm2 BOND PAD SIZE: 100µm x 100µm 4 x 4 mils Metallization Mask Layout HCS154MS (1) (2) Y2 (3) Y3 (4) Y4 (5) Y5 (6) Y6 (7) Y7 (8) Y8 (9) Y9 (10) (11) Y10 (12) GND (13) Y11 (14) Y12 (15) Y13 (21) A2 (20) A3 (19) E2 (18) E1 (17) Y15 (16) Y14 VCC (24) (23) (22)