HCS138MS RENESAS | Alldatasheet
Document overview
- Manufacturer or author: Renesas Electronics Corporation
- PDF pages: 11
Technical content
Features
- 3 Micron Radiation Hardened SOS CMOS
- Total Dose 200K RAD (Si)
- SEP Effective LET No Upsets: >100 MEV-cm2/mg
- Single Event Upset (SEU) Immunity < 2 x 10 -9 Errors/Bit- Day (Typ)
- Latch-Up Free Under Any Conditions
- Fanout (Over Temperature Range) - Standard Outputs - 10 LSTTL Loads
- Military Temperature Range: -55oC to +125oC
- Significant Power Reduction Compared to LSTTL ICs
- DC Operating Voltage Range: 4.5V to 5.5V
- Input Logic Levels -V IL = 0.3 VCC Max -V IH = 0.7 VCC Min
- Input Current Levels Ii 5A at VOL, VOH GND VCC GND VCC 11 6
Ordering Information
+125oC Renesas Class S Equivalent
16 Lead
+125oC Renesas Class S Equivalent HCS138HMSR +25 oCD i e D i e
FN2473 Rev 3.01 Page 2 of 10 Feb 24, 2022 Functional Diagram TRUTH TABLE INPUTS OUTPUTSENABLE E3 E2 E1 A2 A1 A0 Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 XXHXXXHHHHHHHH LXXXXXHHHHHHHH XHXXXXHHHHHHHH HLLLLLLH H H H H H H HL L L LHHLHHHHHH HL L LHLHHLHHHHH HL L LHHHHHLHHHH HL LHL LHHHHLHHH HLLHLHHHHHHLHH HL LHHLHHHHHHLH HL LHHHHHHHHHHL H = High Level, L = Low Level, X = Don’t Care
cal Performance Characteristics” are the only conditions recommended for satisfactory device operation.. TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
- All voltages reference to device GND.
- For functional tests VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
- All voltages referenced to device GND.
- AC measurements assume RL = 500 , CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
- The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested.
These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
- All voltages referenced to device GND.
- AC measurements assume RL = 500 , CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
- For functional tests VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) TABLE 6. APPLICABLE SUBGROUPS
- Alternate group A inspection in accordance with method 5005 of MIL-STD-883 may be exercised.
TABLE 7. TOTAL DOSE IRRADIATION
- Except FN test which will be performed 100% Go/No-Go.
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
- Each pin except VCC and GND will have a resistor of 10K 5% for static burn-in
- Each pin except VCC and GND will have a resistor of 680 5% for dynamic burn-in
TABLE 9. IRRADIATION TEST CONNECTIONS NOTE: Each pin except VCC and GN D will have a resistor of 47K 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
FN2473 Rev 3.01 Page 7 of 10 Feb 24, 2022 Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019,
4 Samples/Wafer, 0 Rejects
100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method 2011 Sample - Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection, Method 2010, Condition A 100% Temperature Cycle, Method 1010, Condition C,
10 Cycles
100% Constant Acceleration, Method 2001, Condition per Method 5004 100% PIND, Method 2020, Condition A 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125 oC min., Method 1015 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125 oC min., Method 1015 100% Interim Electrical Test 2 (T2) 100% Delta Calculation (T0-T2) 100% PDA 1, Method 5004 (Notes 1and 2) 100% Dynamic Burn-In, Condition D, 240 hrs., +125 oC or Equivalent, Method 1015 100% Interim Electrical Test 3 (T3) 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 3) 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5) NOTES: 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Data Package Contents:
- Cover Sheet (Intersil Name and/or Logo, P .O. Number, Customer Part Number, Lot Date Code, Part Number, Lot Number, Quantity).
- Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.
- GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Renesas.
- X-Ray report and film. Includes penetrometer measurements.
- Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
- Lot Serial Number Sheet (Good units serial number and lot number).
- Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test.
- The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative.
FN2473 Rev 3.01 Page 8 of 10 Feb 24, 2022 AC Timing Diagrams AC Load Circuit AC VOLTAGE LEVELS PARAMETER HCS UNITS VCC 4.50 V VIH 4.50 V VS 2.25 V VIL 0 V GND 0 V VS INPUT OUTPUT OUTPUT TTHL 80% 20% 80% 20% VIH VIL VOH VOL VOH VOL TPLH TPHL VS TTLH DUT TEST CL RL POINT CL = 50pF RL = 500
FN2473 Rev 3.01 Page 9 of 10 Feb 24, 2022 Die Characteristics DIE DIMENSIONS: 85 x 101 mils METALLIZATION: Type: SiAl Metal Thickness: 11k Å 1kÅ GLASSIVATION: Type: SiO2 Thickness: 13kÅ 2.6kÅ WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 100m x 100m 4 x 4 mils Metallization Mask Layout HCS138MS NOTE: The die diagram is a generic plot fr om a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask series for the HCS138 is TA14361A. A1 A0 VCC A2 (3) E1 (4) E2 (5) E3 (6) (8) (9) (10) (11) Y4 (12) Y3 (13) Y2 (14) Y1 (2) (1) (16) GND Y6 Y5 (7) (15) NC NC NC NC
FN2473 Rev 3.01 Page 10 of 10 Feb 24, 2022
Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please visit our website to make sure you have the latest revision. DATE REVISION CHANGE Feb 24, 2022 3.01 Updated the Functional Diagram. Added Revision History section.
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