HCS11MS RENESAS | Alldatasheet

Document overview

  • Manufacturer or author: Renesas
  • PDF pages: 7

Technical content

Features

  • 3 Micron Radiation Hardened SOS CMOS
  • Total Dose 200K or 1 Mega-RAD(Si)
  • Dose Rate Upset >10

10 RAD(Si)/s 20ns Pulse

  • Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day (Typ)
  • Latch-Up Free Under Any Conditions
  • Military Temperature Range: -55 oC to +125oC
  • Significant Power Reduction Compared to LSTTL ICs
  • DC Operating Voltage Range: 4.5V to 5.5V
  • Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min
  • Input Current Levels Ii  5A at VOL, VOH

Description

The Intersil HCS11MS is a Radiation Hardened Triple 3- Input AND Gate. A high on all inputs forces the output to a High state. The HCS11MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS11MS is supplied in a 14 lead Weld Seal Ceramic flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line Package (D suffix). Pinouts

14 PIN CERAMIC DUAL-IN-LINE

MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW

14 PIN CERAMIC FLAT PACK

MIL-STD-1835 DESIGNATOR CDFP3-F14, LEAD FINISH C TOP VIEW GND VCC 1A1 GND VCC Truth Table INPUTS OUTPUTS An Bn Cn Yn LLL L LLH L LHL L LHH L HLL L HLH L HHL L HHH H NOTE: L = Logic Level Low, H = Logic level High Functional Diagram An Bn Yn Cn (1, 3, 9) (2, 4, 10) (13, 5, 11) (12, 6, 8)

under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.. TABLE 1. DC. ELECTRICAL PERFORMANCE CHARACTERISTICS

  1. All voltages reference to device GND.
  2. For functional tests VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

  1. All voltages referenced to device GND.
  2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

  1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly

tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

  1. All voltages referenced to device GND.
  2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
  3. For functional tests VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.

TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25 TABLE 6. APPLICABLE SUBGROUPS

  1. Alternate group A inspection in accordance with method 5005 of MIL-STD-883 may be exercised.

TABLE 7. TOTAL DOSE IRRADIATION

  1. Except FN test which will be performed 100% Go/No-Go.

TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

  1. Each pin except VCC and GND will have a resistor of 10K  5% for static burn-in.
  2. Each pin except VCC and GND will have a resistor of 680K  5% for dynamic burn-in.

TABLE 9. IRRADIATION TEST CONNECTIONS NOTE: Each pin except VCC and GN D will have a resistor of 47K  5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS

FN3048 Rev 0.00 Page 6 of 7 November 1994 Die Characteristics DIE DIMENSIONS: 87 x 88 mils 2.20 x 2.24mm METALLIZATION: Type: AlSi Metal Thickness: 11kÅ 1kÅ GLASSIVATION: Type: SiO2 Thickness: 13kÅ  2.6kÅ DIE ATTACH: Material: Silver Epoxy WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 100m x 100m 4 x 4 mils Metallization Mask Layout HCS11MS A1 VCC C1 B1 (2) A2 (3) B2 (4) C2 (5) (6) (7) (8) (9) A3 (10) B3 (11) C3 (12) Y1 (1) (14) (13) Y2 GND Y3

FN3048 Rev 0.00 Page 7 of 7 November 1994 HCS11MS Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted in the quality certifications found at www.intersil.com/en/support/qualandreliability.html Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com For additional products, see www.intersil.com/en/products.html © Copyright Intersil Americas LLC 1999. All Rights Reserved. All trademarks and registered trademarks are the property of their respective owners.