HCS11MS INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 3 Micron Radiation Hardened SOS CMOS
  • Total Dose 200K or 1 Mega-RAD(Si)
  • Dose Rate Upset >10

10 RAD(Si)/s 20ns Pulse

  • Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day (Typ)
  • Latch-Up Free Under Any Conditions
  • Military Temperature Range: -55 oC to +125oC
  • Significant Power Reduction Compared to LSTTL ICs
  • DC Operating Voltage Range: 4.5V to 5.5V
  • Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min
  • Input Current Levels Ii≤ 5µA at VOL, VOH

Description

The Intersil HCS11MS is a Radiation Hardened Triple 3- Input AND Gate. A high on all inputs forces the output to a High state. The HCS11MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS11MS is supplied in a 14 lead Weld Seal Ceramic flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line Package (D suffix). File Number 3048 November 1994 Truth Table INPUTS OUTPUTS An Bn Cn Yn LLL L LLH L LHL L LHH L HLL L HLH L HHL L HHH H NOTE: L = Logic Level Low, H = Logic level High Functional Diagram An Bn Yn Cn (1, 3, 9) (2, 4, 10) (13, 5, 11) (12, 6, 8)

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.. TABLE 1. DC. ELECTRICAL PERFORMANCE CHARACTERISTICS

  1. All voltages reference to device GND.
  2. For functional tests VO≥ 4.0V is recognized as a logic “1”, and VO≤ 0.5V is recognized as a logic “0”.

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

  1. All voltages referenced to device GND.
  2. AC measurements assume RL = 500Ω , CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

  1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly

tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

  1. All voltages referenced to device GND.
  2. AC measurements assume RL = 500Ω , CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
  3. For functional tests VO≥ 4.0V is recognized as a logic “1”, and VO≤ 0.5V is recognized as a logic “0”.

TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25 TABLE 6. APPLICABLE SUBGROUPS

  1. Alternate group A inspection in accordance with method 5005 of MIL-STD-883 may be exercised.

TABLE 7. TOTAL DOSE IRRADIATION

  1. Except FN test which will be performed 100% Go/No-Go.

TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

  1. Each pin except VCC and GND will have a resistor of 10KΩ± 5% for static burn-in.
  2. Each pin except VCC and GND will have a resistor of 680KΩ± 5% for dynamic burn-in.

TABLE 9. IRRADIATION TEST CONNECTIONS TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS

DIE DIMENSIONS: 87 x 88 mils 2.20 x 2.24mm METALLIZATION: Type: AlSi Metal Thickness: 11k Å ± 1kÅ GLASSIVATION: Type: SiO2 Thickness: 13kÅ ± 2.6kÅ DIE ATTACH: Material: Silver Epoxy WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 100µm x 100µm 4 x 4 mils Metallization Mask Layout HCS11MS A1 VCC C1 B1 (2) A2 (3) B2 (4) C2 (5) (6) (7) (8) (9) A3 (10) B3 (11) C3 (12) Y1 (1) (14) (13) Y2 GND Y3