HCF4002B_01 STMICROELECTRONICS | Alldatasheet

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■ PROPAGATION DELAY TIME : tPD = 50ns (TYP .) at VDD = 10V CL = 50pF ■ BUFFERED INPUTS AND OUTPUTS ■ STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS ■ QUIESCENT CURRENT SPECIFIED UP TO 20V ■ 5V, 10V AND 15V PARAMETRIC RATINGS ■ INPUT LEAKAGE CURRENT I I = 100nA (MAX) AT VDD = 18V TA = 25°C ■ 100% TESTED FOR QUIESCENT CURRENT ■ MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES"

DESCRIPTION

The HCF4002B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4002B DUAL 4-INPUT NOR GATE provides the system designer with direct implementation of the NOR function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. HCF4002B DUAL 4-INPUT NOR GATE PIN CONNECTION ORDER CODES PACKAGE TUBE T & R DIP HCF4002BEY SOP HCF4002BM1 HCF4002M013TR DIP SOP

X = Don’t care ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to V SS pin voltage. RECOMMENDED OPERATING CONDITIONS PIN No SYMBOL NAME AND FUNCTION 2, 3, 4, 5, 9, 10, 11, 12 A, B, C, D, E, F, G, H Data Inputs 6, 8 NC Not Connected 1, 13 J, K Data Outputs

7 VSS Negative Supply Voltage

14 V DD Positive Supply Voltage

A, E B, F C, G D, H J, K LLLL H HXXX L XHXX L XXHX L XXXH L Symbol Parameter Value Unit VDD Supply Voltage -0.5 to +22 V VI DC Input Voltage -0.5 to V DD + 0.5 V II DC Input Current ± 10 mA PD Power Dissipation per Package 200 mW Power Dissipation per Output Transistor 100 mW Top Operating Temperature -55 to +125 °C Tstg Storage Temperature -65 to +150 °C Symbol Parameter Value Unit VDD Supply Voltage 3 to 20 V VI Input Voltage 0 to V DD V Top Operating Temperature -55 to 125 °C

The Noise Margin for both "1" and "0" level is: 1V min. with VDD =5V, 2V min. with VDD =10V, 2.5V min. with VDD =15V DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ , tr = tf = 20 ns) (*) Typical temperature coefficent for all VDD value is 0.3 %/°C. Symbol Parameter Test Condition Value UnitVI (V) VO (V) |IO | (µA) VDD (V) TA = 25°C -40 to 85°C -55 to 125°C IL Quiescent Current 0/5 5 0.01 0.25 7.5 7.5 µA0/10 10 0.01 0.5 15 15 0/15 15 0.01 1 30 30 0/20 20 0.02 5 150 150 V OH High Level Output Voltage 0/5 <1 5 4.95 4.95 4.95 V0/10 <1 10 9.95 9.95 9.95 0/15 <1 15 14.95 14.95 14.95 VOL Low Level Output Voltage 5/0 <1 5 0.05 0.05 0.05 V10/0 <1 10 0.05 0.05 0.05 15/0 <1 15 0.05 0.05 0.05 VIH High Level Input Voltage V1/9 <1 10 7 7 7 1.5/13.5 <1 15 11 11 11 VIL Low Level Input Voltage V9/1 <1 10 3 3 3 13.5/1.5 <1 15 4 4 4 IOH Output Drive Current I OL Output Sink Current 0/5 0.4 <1 5 0.44 1 0.36 0.36 II Input Leakage Current 0/18 Any Input 18 ±10-5 ±0.1 ±1 ±1 µA C I Input Capacitance Any Input 5 7.5 pF Symbol Parameter Test Condition Value (*) Unit VDD (V) Min. Typ. Max. tTLH tTHL Output Transition Time 5 125 250 ns10 60 120 15 45 90 tPLH tPHL Propagation Delay Time 5 100 200 ns10 50 100 15 40 80

C L = 50pF or equivalent (includes jig and probe capacitance) R L = 200KΩ R T = ZOUT of pulse generator (typically 50Ω ) WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)

DIM. mm. inch a1 0.51 0.020 B 1.39 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 I 5.1 0.201 L 3.3 0.130 Z 1.27 2.54 0.050 0.100 Plastic DIP-14 MECHANICAL DATA P001A

DIM. mm. inch A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45° (typ.) D 8.55 8.75 0.336 0.344 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 7.62 0.300 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M 0.68 0.026 S8 ° ( m a x . ) SO-14 MECHANICAL DATA PO13G

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