HCC40109B

HCC40109B STMICROELECTRONICS | Alldatasheet

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QUAD LOW-TO-HIGH VOLTAGE LEVEL SHIFTER

DESCRIPTION

.INDEPENDENCE OF POWER SUPPLY SE- QUENCE CONSIDERATIONS – V CC CAN EX- CEED V DD , INPUT SIGNALS CAN EXCEED BOTH V CC AND V DD .UP AND DOWN LEVEL-SHIFTING CAPA- BILITY .THREE-STATE OUTPUTS WITH SEPARATE ENABLE CONTROLS .STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS .QUIESCENT CURRENT SPECIFIED AT 20V FOR HCC DEVICE .5V, 10V, AND 15V PARAMETRIC RATINGS .INPUT CURRENT OF 100nA AT 18V AND 25°C FOR HCC DEVICE .100% TESTED FOR QUIESCENT CURRENT .MEETS ALL REQUIREMENTS OF JEDECTEN- TATIVE STANDARD N °. 13A, ”STANDARD SPECIFICATIONS FOR DESCRIPTION OF ”B” SERIES CMOS DEVICES” June 1989 The HCC40109B (extended temperature range) and HCF40109B (intermediate temperature range) are monolithic integrated circuits, available in 16- lead dual in-line plastic or ceramic package and plastic micropackage. TheHCC/HCF40109B con- tains four low-to-high-voltage level-shifting circuits. Each circuit will shift a low-voltage digital-logic input signal (A, B, C, D) with logical 1 = V CC and logical 0 =V SS to a higher-voltage output signal (E, F, G, H) with logical 1 = VDD and logical 0 = VSS . The HCC/HCF40109B , unlike other low-to-high level- shifting circuits, does not require the presence of the high-voltage supply (VDD ) before the application of either the low-voltage supply (VCC ) or the input sig- nals. There are no restrictions on the sequence of application of VDD ,VCC , or the input signals. In ad- dition, there are no restrictions on the relative mag- nitudesod the supply voltages orinput signals within the device maximum ratings ; V CC mayexceed VDD , and input signals may exceed VCC , and VDD . When operated in the mode V CC VDD , the HCC/HCF40109B , will operate as a high-to-low level-shifter. TheHCC/HCF 40109B also features individual three-state output capability. A low level on any of the separately enabled three-state output EY (Plastic Package) F (Ceramic Frit Seal Package) (Plastic Chip Carrier) ORDER CODES : HCC40109 BF HCF40109BM1 HCF4010 9BEY HCF40109BC 1 PIN CONNECTIONS controls produces a high-impedance state in the corresponding output. (Micro package)

Symbol Parameter Value Unit V DD * Supply Voltage :HCC Types HCF Types – 0.5 to + 20 – 0.5 to + 18 V V V i Input Voltage – 0.5 to V DD + 0.5 V II DC Input Current (any one input) ± 10 mA P tot Total Power Dissipation (per package) Dissipation per Output Transistor for Top = Full Package-temperature Range 200 100 mW mW T op Operating Temperature :HCC Types HCF Types –5 5t o+1 2 5 –4 0t o+8 5 T stg Storage Temperature – 65 to + 150 °C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit V DD Supply Voltage :HCC Types HCF Types 3t o1 8 3t o1 5 V V V I Input Voltage 0 to V DD V T op Operating Temperature :HCC Types HCF Types – 55 to + 125 –4 0t o+8 5 Stresses abov e those listed unde r ”Absolute Maximum Ratings” may caus e perma nent dama ge to the device. This is a stress rating only and functional operation of the device at these or any other cond itions abov e those indicated in the opera tional sections of this specification is not implied. Exposure to abso lute maximum rating conditions for external periods may affect device reliability. * All voltage are with respect to V SS (GND). LOGIC DIAGRAM Inputs Outputs Mode A, B, C, D Enable A ,B ,C ,D E ,F ,G ,H Low to High Level Shift 01 0 11 1 X0 Z LOGIC 0 = LOW (VSS ) X = Don’t Care. Z = High Impedance. LOGIC 1 = VCC at INPUTS and VDD at OUTPUTS. 1 of 4 units TRUTH TABLE HCC/HCF40109B

STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions) Test Conditions Value TLow *2 5 °CT High *Symbol Parameter V I (V) V O (V) |IO | (µA) V CC (V) V DD Unit IL Quiescent Current HCC Types 0/ 5 5 1 0.02 1 30 0/10 10 2 0.02 2 60 0/15 15 4 0.02 4 120 µA 0/20 20 20 0.04 20 600 HCF Types 0/ 5 5 4 0.02 4 30 0/10 10 8 0.02 8 60 0/15 15 16 0.02 16 120 V OH Output High Voltage 0/ 5 < 1 5 4.95 4.95 4.95 V0/10 < 1 10 9.95 9.95 9.95 0/15 < 1 15 14.95 14.95 14.95 V OL Output Low Voltage 5/0 < 1 5 0.05 0.05 0.05 V10/0 < 1 10 0.05 0.05 0.05 15/0 < 1 15 0.05 0.05 0.05 V IH Input High Voltage 1/9 < 1 5 10 3.5 3.5 3.5 V 1.5/13.5< 1 10 15 7 7 7 V IL Input Low Voltage 1/9 < 1 5 10 1.5 1.5 1.5 V 1.5/13.5< 1 10 15 3 3 3 IOH Output Drive Current HCC Types mA HCF Types I OL Output Sink Current HCC Types 0/ 5 0.4 5 0.64 0.51 1 0.36 mA HCF Types 0/ 5 0.4 5 0.52 0.44 1 0.36 IIH,IIL Input Leakage Current HCC Types 0/18 18 ± 0.1 ± 10-5 ± 0.1 ± 1 µAAny InputHCF Types 0/15 15 ± 0.3 ± 10-5 ± 0.3 ± 1 *T Low =–5 5 °C forHCC device : – 40°C forHCF device. *T High = + 125°C forHCC device : + 85°C forHCF device. ** Forced output disabled . HCC/HCF40109B

DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb =2 5°C, CL = 50pF, RL = 200kΩ , typical temperature coefficient for all VDD values is 0.3%/°C, all input rise and fall time = 20ns) Test Conditions ValueSymbol Parameter Shifting Mode V CC (V) V DD (V) Min. Typ. Max. Unit tPHL , tPLH Propagation Delay Time (data input to output) High to Low Level L-H 5 10 300 600 ns 5 15 220 440 10 15 180 360 H-L 10 5 850 1600 15 5 850 1600 15 10 290 580 Low to High Level L-H 5 10 130 260 ns 5 15 120 240 10 15 70 140 H-L 10 5 230 460 15 5 230 460 15 10 80 160 t PHZ 3-State Disable Delay Time Output High to High Impedance L-H 5 10 60 120 ns 5 15 50 100 10 15 35 70 H-L 10 5 120 240 15 5 120 240 15 10 40 80 t PZH High Impedance to Output High L-H 5 10 320 640 ns 5 15 230 460 10 15 180 360 H-L 10 5 800 1500 15 5 800 1500 15 10 280 560 t PLZ Output Low to High Impedance L-H 5 10 370 740 ns 5 15 300 600 10 15 250 500 H-L 10 5 850 1600 15 5 850 1600 15 10 350 700 STATIC ELECTRICAL CHARACTERISTICS (continued) Test Conditions Value V I V O IO  V CC V DD TLow *2 5 °CT High *Symbol Parameter Unit IOH , IOL ** 3-State Output Leakage Current HCC Types 0/18 0/18 18 ± 0.4 ±10 -4 ± 0.4 ± 12 µAHCF Types 0/15 0/15 15 ± 1.0 ±10 -4 ± 1.0 ± 7.5 C I Input Capacitance Any Input 5 7.5 pF *T Low =–5 5 °C forHCC device : – 40°C forHCF device. *T High = + 125°C forHCC device : + 85°C forHCF device. ** Forced output disabled . HCC/HCF40109B

DYNAMIC ELECTRICAL CHARACTERISTICS (continued) Test Conditions ValueSymbol Parameter Shifting Mode V CC (V) V DD (V) Min. Typ. Max. Unit tPZL High Impedance to Output Low L-H 5 10 100 200 ns 5 15 80 160 10 15 40 80 H-L 10 5 120 240 15 5 120 240 15 10 40 80 tTHL , tTL H Transition Time L-H 5 10 50 100 ns 51 5 4 0 8 0 10 15 40 80 H-L 10 5 100 200 15 5 100 200 15 10 50 100 Output Low (sink) Current Characteristics. Output High (source) Current Characteristics. Typical Transition Timevs. Load Capacitance. Typical High-to-low Propagation Delay Time vs. Load Capacitance. HCC/HCF40109B

Typical Input Switching vs. High-level Supply Volt- age. Typical Low-to-high Propagation Delay Time vs. Load Capacitance. TEST CIRCUITS Output Enable Delay Times Test Circuit and Waveforms. High-level Supply Voltage vs. Low-level Supply Voltage. Typical Dynamic Power Dissipation vs. Input Fre- quency. HCC/HCF40109B

Input Leakage Current. Dynamic Power Dissipation. TEST CIRCUITS (continued) Quiescent Device Current. Input Voltage. HCC/HCF40109B

Plastic DIP16 (0.25) MECHANICAL DATA DIM. mm inch a1 0.51 0.020 B 0.77 1.65 0.030 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 17.78 0.700 F 7.1 0.280 I 5.1 0.201 L 3.3 0.130 Z 1.27 0.050 P001C HCC/HCF40109B

Ceramic DIP16/1 MECHANICAL DATA DIM. mm inch A 20 0.787 B 7 0.276 D 3.3 0.130 E 0.38 0.015 e3 17.78 0.700 F 2.29 2.79 0.090 0.110 G 0.4 0.55 0.016 0.022 H 1.17 1.52 0.046 0.060 L 0.22 0.31 0.009 0.012 M 0.51 1.27 0.020 0.050 N 10.3 0.406 P 7.8 8.05 0.307 0.317 Q 5.08 0.200 P053D HCC/HCF40109B

SO16 (Narrow) MECHANICAL DATA DIM. mm inch A 1.75 0.068 a1 0.1 0.2 0.004 0.007 a2 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45 ° (typ.) D 9.8 10 0.385 0.393 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 8.89 0.350 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M 0.62 0.024 S8 ° (max.) P013H HCC/HCF40109B

DIM. mm inch A 9.78 10.03 0.385 0.395 B 8.89 9.04 0.350 0.356 D 4.2 4.57 0.165 0.180 d1 2.54 0.100 d2 0.56 0.022 E 7.37 8.38 0.290 0.330 e 1.27 0.050 e3 5.08 0.200 F 0.38 0.015 G 0.101 0.004 M 1.27 0.050 M1 1.14 0.045 P027A HCC/HCF40109B

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics.  1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A HCC/HCF40109B