HCC40106B STMICROELECTRONICS | Alldatasheet

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.SCHMITT-TRIGGER ACTION WITH NO EX- TERNAL COMPONENTS .HYSTERESIS VOLTAGE (TYP.) 0.9V AT VDD = 5V, 2.3V AT VDD = 10V AND 3.5V AT VDD =1 5 V .NOISE IMMUNITY GREATER THAN 50% .NO LIMIT ON INPUT RISE AND FALL TIME .LOW V DD TO VSS CURRENT DURING SLOW INPUT RAMP .STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS .QUIESCENT CURRENT SPECIFIED AT 20V FOR HCC DEVICE .5V, 10V, AND 15V PARAMETRIC RATINGS .INPUT CURRENT OF 100nA AT 18V AND 25°C FOR HCC DEVICE .100% TESTED FOR QUIESCENT CURRENT .MEETS ALL REQUIREMENTS OF JEDEC TENTATIVE STANDARD N °13A, ”STANDARD SPECIFICATIONS FOR DESCRIPTION OF ”B” SERIES CMOS DEVICES” June 1989 EY (Plastic Package) F (Ceramic Frit Seal Package) (Plastic Chip Carrier) ORDER CODES : HCC40106BF HCF40106BM1 HCF40106 BEY HCF40106BC1 PIN CONNECTIONS (Micro Package)

DESCRIPTION

The HCC40106B (extended temperature range) and HCF40106B (intermediate temperature range) are monolithic integrated circuits, available in 14- lead dual in-line plastic or ceramic package and plastic micropackage. The HCC/HCF40106B consists of six Schmitt-trig- ger circuits. Each circuit functions as an inverter with Schmitt-trigger action on the input. The trigger swit- ches at different points for positive and negative- going signals. The difference between the positive-going voltage (V P) and the negative-going voltage (VN ) is defined as hysteresis voltage (VH).

Symbol Parameter Value Unit V DD * Supply Voltage :HCC Types HCF Types – 0.5 to + 20 – 0.5 to + 18 V V V i Input Voltage – 0.5 to V DD + 0.5 V II DC Input Current (any one input) ± 10 mA P tot Total Power Dissipation (per package) Dissipation per Output Transistor for Top = Full Package-temperature Range 200 100 mW mW T op Operating Temperature :HCC Types HCF Types –5 5t o+1 2 5 –4 0t o+8 5 T stg Storage Temperature – 65 to + 150 °C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit V DD Supply Voltage :HCC Types HCF Types 3t o1 8 3t o1 5 V V V I Input Voltage 0 to V DD V T op Operating Temperature :HCC Types HCF Types – 55 to + 125 –4 0t o+8 5 Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability. * All voltage values are referred to V SS pin voltage. HCC/HCF40106B

STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions) Test Conditions Value V I V O |IO |V DD T Low * 25 °CT High *Symbol Parameter Unit IL Quiescent Current HCC Types 0/ 5 5 1 0.02 1 30 µA 0/10 10 2 0.02 2 60 0/15 15 4 0.02 4 120 0/20 20 20 0.04 20 600 HCF Types 0/ 5 5 4 0.02 4 30 0/10 10 8 0.02 8 60 0/15 15 16 0.02 16 120 V OH Output High Voltage 0/ 5 < 1 5 4.95 4.95 4.95 V0/10 < 1 10 9.95 9.95 9.95 0/15 < 1 15 14.95 14.95 14.95 V OL Output Low Voltage 5/10 < 1 5 0.05 0.05 0.05 V10/0 < 1 10 0.05 0.05 0.05 15/0 < 1 15 0.05 0.05 0.05 V P Positive Trigger Threshold Voltage V N Negative Trigger Threshold Voltage 15 4 7.4 4 5.8 7.4 4 7.4 V H Hysteresis Voltage 15 1.6 5 1.6 3.5 5 1.6 *T Low =–5 5 °C forHCC device : – 40°C forHCF device. *T High= + 125°C forHCC device : + 85°C forHCF device. HCC/HCF40106B

DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb =2 5°C, CL = 50pF, RL = 200kΩ , typical temperature coefficient for all VDD values is 0.3%/°C, all input rise and fall time = 20ns) Test Conditions ValueSymbol Parameter V DD (V) Min. Typ. Max. Unit tPLH , tPHL Propagation Delay Time 5 140 280 ns10 70 140 15 60 120 tTHL , tTLH Transition Time 5 100 200 ns10 50 100 15 40 80 STATIC ELECTRICAL CHARACTERISTICS (continued) Test Conditions Value V I V O |IO |V DD T Low * 25 °CT High *Symbol Parameter Unit IOH Output Drive Current HCC Types mA HCF Types I OL Output Sink Current HCC Types 0/ 5 0.4 5 0.64 0.51 1 0.36 mA HCF Types 0/ 5 0.4 5 0.52 0.44 1 0.36 I IH,IIL** Input Leakage Current HCC Types 0/18 Any Input µA HCF Types C I Input Capacitance Any Input 5 7.5 p *T Low =–5 5 °Cf o rHCC device : – 40°C forHCF device. *T High =+1 2 5°Cf o rHCC device : + 85°Cf o rHCF device. HCC/HCF40106B

(a) Definition of VP,VN and VH. (b) Transfer Characteristic of 1 of 6 gates. (c) Test Setup. Input and Output Characteristics. Typical Current Voltage Transfer Characteristics, and Test Circuit. HYSTERESIS DEFINITION, CHARACTERISTICS AND TEST SETUP HCC/HCF40106B

Typical Voltage Transfer Characteristics vs. Temperature, and Test Circuit. Typical Transition Time vs. Load Capacitance. Output Low (sink) Current Characteristics. Output High (source) Current Characteristics. Typical Propagat ion Delay Time vs. Load Capacit- ance. HYSTERESIS DEFINITION, CHARACTERISTICS AND TEST SETUP HCC/HCF40106B

Typical Trigger Threshold Voltage vs. Supply Voltage . Typical per Cent Hysteresis vs. Supply Voltage. Typical Power Dissipation per Trigger vs. Input Frequency. Typical Power Dissipation per Trigger vs. Input Frequency. TYPICAL APPLICATIONS ASTABLE MULTIVIBRATOR. MONOSTABLE MULTIVIBRATOR. HCC/HCF40106B

WAVE SHAPER. TYPICAL APPLICATIONS (continued) Quiescent Device Current. Dynamic Power Dissipation. Input Current . TEST CIRCUITS HCC/HCF40106B

Plastic DIP14 MECHANICAL DATA DIM. mm inch a1 0.51 0.020 B 1.39 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 I 5.1 0.201 L 3.3 0.130 Z 1.27 2.54 0.050 0.100 P001A HCC/HCF40106B

Ceramic DIP14/1 MECHANICAL DATA DIM. mm inch A 20 0.787 B 7.0 0.276 D 3.3 0.130 E 0.38 0.015 e3 15.24 0.600 F 2.29 2.79 0.090 0.110 G 0.4 0.55 0.016 0.022 H 1.17 1.52 0.046 0.060 L 0.22 0.31 0.009 0.012 M 1.52 2.54 0.060 0.100 N 10.3 0.406 P 7.8 8.05 0.307 0.317 Q 5.08 0.200 P053C HCC/HCF40106B

DIM. mm inch A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45 ° (typ.) D 8.55 8.75 0.336 0.344 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 7.62 0.300 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M 0.68 0.026 S8 ° (max.) P013G HCC/HCF40106B

DIM. mm inch A 9.78 10.03 0.385 0.395 B 8.89 9.04 0.350 0.356 D 4.2 4.57 0.165 0.180 d1 2.54 0.100 d2 0.56 0.022 E 7.37 8.38 0.290 0.330 e 1.27 0.050 e3 5.08 0.200 F 0.38 0.015 G 0.101 0.004 M 1.27 0.050 M1 1.14 0.045 P027A HCC/HCF40106B

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics.  1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A HCC/HCF40106B