HCC4007UB STMICROELECTRONICS | Alldatasheet

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DUAL COMPLEMENTARY PAIR PLUS INVERTER EY (Plastic Package) ORDER CODES : HCC4007UBF HCF4007UBM1 HCF4007UBEY HCF4007UBC1 F (Ceramic Package) (Micro Package) (Chip Carrier) PIN CONNECTIONS

DESCRIPTION

.STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS .MEDIUM SPEED OPERATION t PHL ,tPLH = 30ns (typ.) AT 10V .QUIESCENT CURRENT SPECIFIED TO 20V FOR HCC DEVICE .INPUT CURRENT OF 100nA AT 18V AND 25oC FOR HCC DEVICE .100% TESTED FOR QUIESCENT CURRENT .MEETS ALL REQUIREMENTS OF JEDECTEN- TATIVE STANDARD N o 13A, ”STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES” The HCC4007UB is a monolithic integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micropackage. The HCC4007UB typeis comprised ofthree n-chan- nel and three p-channe l enhanceme nt type MOS transistors. The transistor elements are accessible through the package terminals to provide a conveni- ent means for constructing the various typical cir- cuits as shown in typical applications. More complex functions are possible using multiple packages. Numbers shown in parentheses indicate terminals that are connected together to form the varius con- figurations listed.

Symbol Parameter Value Unit VDD * Supply Voltage: HCC Types HCF Types -0.5 to +20 -0.5 to +18 V V Vi Input Voltage -0.5 to V DD + 0.5 V II DC Input Current (any one input) ± 10 mA Ptot Total Power Dissipation (per package) Dissipation per Output Transistor for Top = Full Package Temperature Range 200 100 mW mW T op Operating Temperature:HCC Types HCF Types -55 to +125 -40 to +85 oC oC Tstg Storage Temperature -65 to +150 oC Stressesabove those listedunder ”Absolute Maximum Ratings” may cause permanent damage to thedevice. This isa stress ratingonly and functional opera tion of the device at these or any other cond itions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability. * All voltage values are referred to V SS pin voltage. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit VDD Supply Voltage:HCC Types HCF Types 3t o1 8 3t o1 5 V V VI Input Voltage 0 to V DD V Top Operating Temperature:HCC Types HCF Types -55 to +125 -40 to +85 oC oC HCC/HCF4007UB

SCHEMATIC DIAGRAM (showing input, output and parasitic diodes) s COS/MOS OUTPUT PROTECTION NETWORK BE- TWEEN TERMINAL NOS. 1, 2, 4, 5, 8, 9, 11, 12, 13, AND THE CORRESPONDING DRAINS AND/OR SOURCES k COS/MOS INPUT PROTECTION NETWORK PARASITIC AND NETWORK COMPONENTS D1 = N+ TO P WELL D2 = P+ TO SUBSTRATE R1 = 1 - 5 KΩ R 2=1 5-3 0Ω HCC/HCF4007UB

STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions) Symbol Parameter Test Conditios Value UnitVI (V) VO (V) |IO | (µA) VDD (V) TLOW *2 5 oCT HIGH * IL Quiescent Current HCC Types 0/5 5 0.25 0.01 0.25 7.5 µA 0/10 10 0.5 0.01 0.5 15 0/15 15 1 0.01 1 30 0/20 20 5 0.02 5 150 HCF Types 0/5 5 1 0.01 1 7.5 0/10 10 2 0.01 2 15 0/15 15 4 0.01 4 30 V OH Output High Voltage 0/5 < 1 5 4.95 4.95 4.95 V0/10 < 1 10 9.95 9.95 9.95 0/15 < 1 15 14.95 14.95 14.95 VOL Output Low Voltage 5/0 < 1 5 0.05 0.05 0.05 V10/0 < 1 10 0.05 0.05 0.05 15/0 < 1 15 0.05 0.05 0.05 VIH Input High Voltage 0.5/4.5 < 1 5 4 4 4 V1/9 < 1 10 8 8 8 V IL Input Low Voltage 4.5/0.5 < 1 5 1 1 1 V9/1 < 1 10 2 2 2 IOH Output Drive Current HCC Types mA HCF Types IOL Output Sink Current HCC Types 0/5 0.4 5 0.64 0.51 1 0.36 mA HCF Types 0/5 0.4 5 0.52 0.44 1 0.36 I IH,IIL Input Leakage Current HCC Types 0/18 Any Input 18 ±0.1 ±10 -5 ±0.1 ±1 µA HCF Types 0/15 15 ±0.3 ±10-5 ±0.3 ±1 C I Input Capacitance Any Input 5 7.5 pF *T LOW =- 5 5oCf o rHCC device: -40oC forHCF device. *T HIGH =+ 1 2 5oCf o rHCC device: +85oC forHCF device. The Noise Margin for both ”1” and ”0” level is: 1V min. with VDD = 5 V, 2 V min. with VDD = 10 V, 2.5 V min. withVDD =1 5V HCC/HCF4007UB

DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb =2 5 oC, CL =5 0p F ,RL = 200 KΩ , typical temperature coefficent for all VDD values is 03 %/oC, all input rise and fall times= 20 ns) Symbol Parameter Test Conditions Value Unit VDD (V) Min. Typ. Max. tPLH tPHL Propagation Delay Time 5 55 110 ns10 30 60 15 25 50 tTLH tTHL Transition Time 5 100 200 ns10 50 100 15 40 80 Minimum and Maximum Voltage Transfer Characterisctics for Inverter and test Circuit Typical Current and Voltage Transfer Characteristics for Inverter and Test Circuit HCC/HCF4007UB

Typical Voltage Transfer Characteristics for NAND Gate and Test Circuit Typical Voltage Transfer Characteristics for NOR Gate and Test Circuit Typical Output Low (Sink) Current Caracteristics Minimum Output Low (Sink) Current Charac- teristics HCC/HCF4007UB

Typical Output High (Source) Current Charac- teristics Typical Voltage Transfer Characteristics as a Function of Temperature Typical Transition Time vs. Load Capacitance Minimum Output High (Sourrce) Current Charac- teristics Typical Propagation Delay Time vs. Load Capa- citance Typical Dissipatio Per Gate vs. Frequency Char- acteristics HCC/HCF4007UB

TYPICAL APPLICATIONS (Sample COS/MOS logic circuit arrangements using type 4007UB) Triple Inverters: (14, 2, 11); (8, 13); (1, 5); (4, 7, 9). 3-Input NOR Gate: (13, 2); (1, 11); (12, 5, 8); (4, 7, 9). 3-Input NAND Gate: (1, 12, 13); (2, 14, 11); (4, 8); (5, 9). High Sink Current Driver: (6, 3, 10); (8, 5, 12); High Sink and Source Current Driver: (6, 3, 10); High Source Current Driver: (6, 3, 10); HCC/HCF4007UB

Quiescent Device Current. Input Voltage. Input Leakage Current. Dual Bidirectional Trasmission Gating: (1, 5, 12); (2, 9); (11, 4); (8, 13, 10); (6, 3). HCC/HCF4007UB

Plastic DIP14 MECHANICAL DATA DIM. mm inch a1 0.51 0.020 B 1.39 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 I 5.1 0.201 L 3.3 0.130 Z 1.27 2.54 0.050 0.100 P001A HCC/HCF4007UB

Ceramic DIP14/1 MECHANICAL DATA DIM. mm inch A 20 0.787 B 7.0 0.276 D 3.3 0.130 E 0.38 0.015 e3 15.24 0.600 F 2.29 2.79 0.090 0.110 G 0.4 0.55 0.016 0.022 H 1.17 1.52 0.046 0.060 L 0.22 0.31 0.009 0.012 M 1.52 2.54 0.060 0.100 N 10.3 0.406 P 7.8 8.05 0.307 0.317 Q 5.08 0.200 P053C HCC/HCF4007UB

DIM. mm inch A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45 ° (typ.) D 8.55 8.75 0.336 0.344 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 7.62 0.300 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M 0.68 0.026 S8 ° (max.) P013G HCC/HCF4007UB

DIM. mm inch A 9.78 10.03 0.385 0.395 B 8.89 9.04 0.350 0.356 D 4.2 4.57 0.165 0.180 d1 2.54 0.100 d2 0.56 0.022 E 7.37 8.38 0.290 0.330 e 1.27 0.050 e3 5.08 0.200 F 0.38 0.015 G 0.101 0.004 M 1.27 0.050 M1 1.14 0.045 P027A HCC/HCF4007UB

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics.  1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A HCC/HCF4007UB