HBT169M KEXIN | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
Repetitive peak off-state voltages :400V Average on-state current :0.5A RMS on-state current :0.8A Non-repetitive peak on-state current :8A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Peak Repetitive Forward and Reverse Blocking Voltage* VDRM and VRRM 400 V Forward Current RMS I T(RMS) 0.8 A Non-repetitive peak on-state current (t=10ms) 8 A Non-repetitive peak on-state current (t=8.3ms) 9 A Circuit Fusing Considerations (t = 10ms) I 2t 0.32 A2s Repetitive rate of rise of on-state current after triggering *1 d IT/dt 50 A/us Peak gate current I GM 1A Peak Gate Power Forward, TA =2 5 PGM 2W Average Gate Power Forward, TA =2 5 PGF(AV) 0.1 W Peak Gate Current Forward, TA =2 5 IGFM 1A Peak gate voltage V GM 5V Peak Gate Voltage Reverse VGRM 5V Thermal resistance junction to lead *2 R th j-lead 60 K/W Thermal resistance junction to ambient *2 R th j-a 150 K/W Storage temperature T stg 150 Operating junction temperature TJ 125 *1 ITM=2A; IG=10mA; dIG/dt=100mA/us) *2 pcb mounted;lead length=4mm ITSM
www.kexin.com.cn Electrical Characteristics(Ta = 25 , unless otherwise noted.) Parameter Symbol Testconditons Min Typ. Max Unit On-state Voltage V T IT=1A 1.2 1.35 V Gate Trigger Current (Continuous dc)*2 TC =2 5 IGT VD=12V, IT=10mA,Gate open circuit 50 200 A Latching Current I L VD=12V, IGT=0.5mA; RGK=1k 26 m A Holding Current I H VD=12V, IGT=0.5mA; RGK=1k 25 m A VD=12V, IT=10mA,Gate open circuit 0.5 0.8 VD=V DRM(max), IT=10mA; Tj=125 ,Gate open circuit 0.2 0.2 Off-state Leakage Current I D,IR VD=VDRM(max); VR=V RRM(max);Tj=125 ;R GK=1k 0.05 0.1 mA Critical rate of rise of off-state voltage dVD/dt VDM=67% VDRM(max); Tj=125 ,exponential waveform; RGK=1k 500 800 V/us Gate controlled turn-on time tgt ITM=2A; VD=VDRM(max),G=10mA; dIG/dt=0.1A/us 2u s Circuit commutated turn-off time tq VD=67% VDRM(max); Tj=125 ,TM=1.6A; VR=35V; dITM/dt=30A/us,dVD/dt=2V/us; RGK=1k 100 us *1. Forward current applied for 1 ms maximum duration, duty cycle1%. *2. RGK current is not included in measurement. Gate Trigger Voltage V GT V HBT169M Marking Marking 169
3www.kexin.com.cn Normalised Gate Trigger Current IGT(Ta)/IGT(25 o C), Versus Air Temperature Ta 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 -25 25 75 125 175 Ta( o IGT/IGT(25 o Typical & Maximum On-state Characteristic VT/V IT/A typ 25ºC 125ºC Normalised Gate Trigger Voltage VGT(Ta)/VGT(25 o C), Versus Air Temperature Ta 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 Ta( o VGT/VGT(25 o Normalised Holding Current IH(Ta)/IH(25 o C), Versus Air Temperature Ta 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 140 Ta/( o IH/IH(25 o Normalised Latching Current IL(Ta)/IL(25 o C), Vrsus Air Temperature Ta 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -25 0 25 50 75 100 125 150 Ta( o IL/IL(25 o Maximum On-atate Dissipation, Ptot Versus Average On-state Current, IT(AV) a=conduction angle 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IF(AV)/A Ptot/W a=90º a=120º a=180º