HBR1020CJR THINKISEMI | Alldatasheet
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Technical content
Features
/hexstar2 /hexstar2 /hexstar2 High current capability /hexstar2 Case: Heatsink TO-220CS internal ceramic insulated /hexstar2 High surge current capability /hexstar2 Weight: 2.2 gram approximately /hexstar2 Polarity: As marked on diode body method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current /hexstar2 Epoxy: UL 94V-0 rate flame retardant TO-220CS Unit:mm Application /hexstar2 Inverters,Free Wheeling and Polarity Protection /hexstar2 High Frequency SMPS,Telecom SMPS and UPS /hexstar2 Car Audio Amplifiers and Sound Device Systems etc.. Matured HMBR SKY technology Case Series Tandem Polarity 9.19 ±0.20 φ3.60 ±0.20 9.90 ±0.20 2.80 ±0.20 15.70 ±0.20 13.08 ±0.20 3.02 ±0.20 2.54typ 6.50 ±0.20 0.80 ±0.20 1.27 ±0.20 1.52 ±0.20 1.30 ±0.20 4.50 ±0.20 0.50 ±0.20 2.40 ±0.20 2.54typ http://www.thinkisemi.com/ Page 1/2Rev.05 Internal ceramic insulated package outline I F(AV) 10A V RRM 200V(2x100V) T j 175 ℃ V F(max) 0.70V（@Tj=125℃） Symbol Characteristics I (AV) Maximum Average Forward Rectified Current @T C =150 C I FSM Maximum Ratings 200 A A Unit o Maximum Forward Voltage F =10A @T J =25 C F =10A @T J =125 CV F I R Maximum DC Reverse Current At Rated DC Blocking Voltage J =25 C J =125 C T J Operating Temperature Range 0.85 0.70 1.9 -55 to +175 -40 to +150 V uA o o o C/W o C o o Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) C o T STG Storage Temperature Range R th(j-c) Thermal Resistance from Junction to Case mA @I V V RRM Repetitive Peak Reverse Voltage Maximum DC Blocking Voltage V DC V Per Device(2x100V) Per Diode 200 100 V (Series Connection) ABSOLUTE RATINGS (Tc=25℃) NOTE: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. (Note 1) (Note 2)
ELECTRICAL CHARACTERISTICS
(curves) I R vs V R I F vs V F I F(AV) vs T C C T vs V R (Per Diode) (Per Diode) © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 2/2Rev.05