HBNP1268Q8 CYSTEKEC | Alldatasheet

Document overview

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Technical content

Features

  • Includes two NPN chips and two PNP chips in a SOP-8 package.
  • Pb-free lead plating package Equivalent Circuit Outline HBNP1268Q8 SOP-8 E：Emitter C：Collector B：Base

CYStech Electronics Corp. Spec. No. : C198Q8 Issued Date : 2010.11.29 Revised Date : Page No. : 2/8 HBNP1268Q8 CYStek Product Specification Absolute Maximum Ratings (Each transistor, Ta=25°C) Limits Parameter Symbol NPN PNP Unit Collector-Base V oltage VCBO 80 -30 Collector-Emitter V oltage VCEO 50 -30 Emitter-Base V oltage VEBO 6 -5 V Collector Current (DC) IC 4 -5 A Collector Current (Pulse) (Note 1) ICM 7 -7 A Pd 1.38 W Total Power Dissipation (Note 2) Linear Derating Factor 0.01 W / °C Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150 °C Thermal Resistance, Junction-to-Ambient (Note 2) Rth,ja 90 °C/W Note : 1. Pulse width≤300μs, duty cycle≤2%. 2. Surface mounted on 1 in² copper pad of FR-4 board; 135°C/W when mounted on minimum copper pad. Characteristics (Tj=25°C, unless otherwise specified) NPN 1 & NPN 2 Symbol Min. Typ. Max. Unit Test Conditions BVCBO 80 - - V IC=100μA, IE=0 BVCEO 50 - - V IC=1mA, IB=0 BVEBO 6 - - V IE=50μA, IC=0 ICBO - - 100 nA VCB=80V , IE=0 ICEO - - 1 μA VCE=50V , IB=0 IEBO - - 100 nA VEB=6V , IC=0 *VCE(SAT) - - 100 mV IC=400mA, IB=20mA *VCE(SAT) - - 0.25 V IC=1A, IB=10mA *VCE(SAT) - 0.25 0.5 V IC=2A, IB=100mA *RCE(SAT) - 0.125 0.25 Ω IC=2A, IB=100mA *VBE(SAT) - - 1.5 V IC=2A, IB=200mA *hFE1 250 - - - VCE=2V , IC=100mA *hFE2 280 - 600 - VCE=2V , IC=500mA *hFE3 100 - - - VCE=2V , IC=1A fT - 90 - MHz VCE=5V , IC=0.1A, f=100MHz Cob - 13 - pF VCB=10V , f=1MHz

CYStech Electronics Corp. Spec. No. : C198Q8 Issued Date : 2010.11.29 Revised Date : Page No. : 3/8 HBNP1268Q8 CYStek Product Specification PNP 1 & PNP 2 Symbol Min. Typ. Max. Unit Test Conditions ICBO - - -100 nA VCB=-30V , IE=0A ICEO - - -100 nA VCE=-30V , IB=0A IEBO - - -2 mA VEB=-5V 120 - - - VCE=-2V , IC=-100mA 140 - - - VCE=-2V , IC=-1A *HFE 100 - - - VCE=-2V , IC=-4A - -0.25 -0.4 V IC=-1A, IB=-5mA - -0.34 -0.45 V IC=-2A, IB=-20mA *VCE(SAT) - -0.53 -0.6 V IC=-3A, IB=-30mA *RCE(SAT) - -0.18 -0.2 Ω IC=-3A, IB=-30mA R1 280 400 520 Ω - R2 7 10 13 kΩ - fT 100 - - MHz VCE=-10V , IE=-500mA, f=100MHz *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

(Pb-free lead plating package) 3000 pcs / Tape & Reel

CYStech Electronics Corp. Spec. No. : C198Q8 Issued Date : 2010.11.29 Revised Date : Page No. : 4/8 HBNP1268Q8 CYStek Product Specification Typical Characteristics NPN 1 & NPN 2 Emitter Grounded Output Characteristics 0.05 0.1 0.15 0.2 0.25 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=0 IB=100uA IB=200uA IB=300uA IB=400uA IB=500uA Emitter Grounded Output Characteristics 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=0 IB=500uA IB=1mA IB=1.5mA IB=2mA IB=2.5mA Emitter Grounded Output Characteristics 0.5 1.5 2.5 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=0 IB=2mA IB=4mA IB=6mA IB=8mA IB=10mA Emitter Grounded Output Characteristics 0.5 1.5 2.5 3.5 4.5 0123456 Collector-to-Emitter Voltage---VCE(V) Collector Current---IC(A) IB=0 IB=5mA IB=10mA IB=15mA IB=20mA IB=25mA Current Gain vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE VCE=1V VCE=2V VCE=5V Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) IC=50IB IC=20IB IC=100IB VCE(SAT)

CYStech Electronics Corp. Spec. No. : C198Q8 Issued Date : 2010.11.29 Revised Date : Page No. : 5/8 HBNP1268Q8 CYStek Product Specification Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) VBE(SAT)@IC=10IB Capacitance vs Reverse-Biased Voltage 100 1000 0.1 1 10 100 Reverse-Biased Voltage---(V) Capacitance---(pF) Cob Cib PNP 1 & PNP 2 Current Gain vs Collector Current 100 1000 1 10 100 1000 10000 Collector Current---IC(mA) Current Gain---HFE VCE=1V VCE=2V VCE=5V Saturation Voltage vs Collector Current 100 1000 10000 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) VCESAT@IC=100IB VCESAT@IC=200IB Saturation Voltage vs Collector Current 100 1000 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage---(mV) IB=20mA VCESAT IB=2mA IB=5mA IB=10mA On Voltage vs Collector Current 100 1000 10000 100000 1 10 100 1000 10000 Collector Current---IC(mA) On Voltage---(mV) VCE=2V

CYStech Electronics Corp. Spec. No. : C198Q8 Issued Date : 2010.11.29 Revised Date : Page No. : 6/8 HBNP1268Q8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C198Q8 Issued Date : 2010.11.29 Revised Date : Page No. : 7/8 HBNP1268Q8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C198Q8 Issued Date : 2010.11.29 Revised Date : Page No. : 8/8 HBNP1268Q8 CYStek Product Specification SOP-8 Dimension *: Typical Inches Millimeters Inches Millimeters DIM Min. Max. Min. Max. 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Marking: Top View A B Front View F C D E G Part A I H J K O M L N Right side View Part A Date Code Device Name NP1268 □□□□ DIM Min. Max. Min. Max. H 0.1889 0.2007 4.80 5.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.