HBM31PT CHENMKO | Alldatasheet
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Technical content
FEATURES
- For surface mounted applications * Low forward voltage, high current capability * Low leakage current * Metallurgically bonded construction * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Glass passivated junction * High temperature soldering guaranteed : 260oC/10 seconds at terminals Case: JEDEC SMB molded plastic Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Indicated by cathode band Weight: 0.003 ounces, 0.093 gram MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60 HZ, resistive or inductive load. For capacitive load, derate current by 20%. HBM31PT THRU HBM38PT SMB CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 - 1000 Volts CURRENT 3.0 Amperes ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) NOTES : Maximum Full Load Reverse Current Average, Full Cycle at TA = 55oC CHARACTERISTICS SYMBOL UNITS 1.31.0 1.5 1.7 5.0 50 70 uAmps 100 uAmps nSec VoltsMaximum Instantaneous Forward Voltage at 3.0 A DC Maximum DC Reverse Current at Rated DC Blocking Voltage at TA = 25oC MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TL = 90oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) Operating and Storage Temperature Range SYMBOL VRRM VRMS VDC IO CJ VF Maximum Reverse Recovery Time (Note 2) trr IR TJ, TSTG IFSM UNITS Volts Volts Volts Amps HBM31PT HBM33PT 200 140 200 HBM34PT 210 300 300 HBM35PT 400 280 400 HBM36PT 600 420 600 HBM38PT 1000 700 1000 HBM37PT 800 560 800 3.0 70 50 -65 to +150 Amps pF oC HBM32PT 100 100 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts 2. Test Conditions : IF = 0.5 A, IR = -1.0 A, IRR = -0.25 A SMBDimensions in inches and (millimeters) 0.155 (3.94) 0.130 (3.30) 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.012 (0.305) 0.006 (0.152) 0.160 (4.06) 0.083 (2.11) 0.077 (1.96) 0.220 (5.59) 0.205 (5.21) 2002-5 (1) (2) HBM31PT HBM33PT HBM34PT HBM35PT HBM36PT HBM38PTHBM37PTHBM32PT 0.190 (4.75)
RATING CHARACTERISTIC CURVES ( HBM31PT THRU HBM38PT ) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC FIG. 3 - TYPICAL REVERSE CHARACTERISTICS FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 6 - TYPICAL JUNCTION CAPACITANCEFIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT INSTANTANEOUS REVERSE CURRENT, (uA)PEAK FORWARD SURGE CURRENT, ( A ) JUNCTION CAPACITANCE, ( pF ) REVERSE VOLTAGE, ( V )NUMBER OF CYCLES AT 60 Hz INSTANTANEOUS FORWARD VOLTAGE, ( V )PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % ) INSTANTANEOUS FORWARD CURRENT, ( A ) NONINDUCTIVE NONINDUCTIVE D.U.T( + )
25 Vdc
(approx) ( - ) 1 NON- INDUCTIVE OSCILLOSCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) ( - ) ( + ) NOTES: 1. Rise Time = 7 ns max. Input Impedance = 1 megohm. 22 pF. 2. Rise Time = 10 ns max. Source Impedlance= 50 ohms. +0.5A -0.25A -1.0A trr 1cm SET TIME BASE FOR 10/20 nS/cm AVERAGE FORWARD CURRENT, ( A ) LEAD TEMPERATURE ( O C ) FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE Single Phase Half Wave 60Hz Resistive or Inductive Load 3.0 1.5 0.5 1.0 2.0 2.5 250 50 75 100 125 150 175 1.0 0.1 .01 .001 Pulse Width = 300uS 1% Duty Cycle TJ =25oC TJ =25oC 200 100 .1 .2 .4 1.0 2 4 10 20 40 1001 2 5 10 20 50 100 120 100 50 10 HBM31PT~HBM33PT HBM36PT~HBM38PT HBM31PT~HBM35PT HBM34PT~HBM35PT HBM36PT HBM37PT~HBM38PT 8.3ms Single Half Sine-Wave (JEDEC Method) 0.1 1.0 100 1000 .01 0 20 40 60 80 100 120 140 TJ =25oC TJ =100oC TJ =125oC