HBFP-0420-BLK

HBFP0420 HP | Alldatasheet

Document overview

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Technical content

Features

• Ideal for High Gain, Low Noise Applications
• Transition Frequency fT = 25 GHz
• Typical Performance at

1.8 GHz

and Noise Figure of 1.1 dB at 2 V and 5 mA P 1dB of 12 dBm at 2 V and 20 mA

• Can be Used Without Impedance Matching

Applications

• LNA, Oscillator, Driver Amplifier, Buffer Amplifier, and Down Converter for Cellular and PCS Handsets and Cordless Telephones
• Oscillator for TV Delivery and TVRO Systems up to

10 GHz

Description

Hewlett Packard’s HBFP-0420 is a high performance isolated collector silicon bipolar junction transistor housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. HBFP-0420 provides an associated gain of 17 dB, noise figure of 1.1 dB, and P 1dB of 12 dBm at 1.8 GHz. Because of high gain and low current characteristics, HBFP-0420 is ideal for cellular/ PCS handsets as well as for C-Band and Ku-Band applications. This product is based on a 25 GHz transition frequency fabrication process, which enables the products to be used for high performance, low noise applica- tions at 900 MHz, 1.9 GHz, 2.4 GHz, and beyond. Surface Mount Plastic Package/SOT-343 (SC-70) Outline 4T Pin Configuration CollectorEmitter Base Emitter Note: Package marking provides orientation and identification.

Symbol Parameter Units Maximum [1] VEBO Emitter-Base Voltage V 1.5 VCBO Collector-Base Voltage V 15.0 VCEO Collector-Emitter Voltage V 4.5 IC Collector Current mA 36 PT Power Dissipation [2] mW 162 Tj Junction Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Thermal Resistance: θjc = 300°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. P T limited by maximum ratings. Electrical Specifications, TC = 25°C Symbol Parameters and Test Conditions Units Min. Typ. Max. DC Characteristics BVCEO Collector-Emitter Breakdown Voltage I C = 1 mA, open base V 4.5 ICBO Collector-Cutoff Current V CB = 5 V, IE = 0 nA 150 IEBO Emitter-Base Cutoff Current V EB = 1.5 V, IC = 0 µA1 5 hFE DC Current Gain V CE = 2 V, IC = 5 mA — 50 80 150 RF Characteristics FMIN Minimum Noise Figure I C = 5 mA, VCE = 2 V, f = 1.8 GHz dB 1.1 1.4 Ga Associated Gain I C = 5 mA, VCE = 2 V, f = 1.8 GHz dB 15.5 17 |S21|2 Insertion Power Gain I C = 20 mA, VCE = 2 V, f = 1.8 GHz dB 17 P-1dB Power Output @ 1 dB I C = 20 mA, VCE = 2 V, f = 1.8 GHz dBm 12 Compression Point

HBFP-0420 Typical Scattering Parameters, VCE = 2 V, IC = 5 mA, TC = 25°C Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang HBFP-0420 Noise Parameters: VCE = 2 V, IC = 5 mA Freq. F min Γopt RN/50 G a GHz dB Mag Ang Ω dB S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. S and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each emitter lead contact point, one via on each side of that point.

HBFP-0420 Typical Scattering Parameters, VCE = 2 V, IC = 15 mA, TC = 25°C Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang HBFP-0420 Noise Parameters: VCE = 2 V, IC = 15 mA Freq. F min Γopt RN/50 G a GHz dB Mag Ang Ω dB S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. S and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each emitter lead contact point, one via on each side of that point.

Figure 1. Associated Gain vs. Figure 2. Noise Figure vs. Figure 3. Associated Gain vs. Figure 5. Associated Gain vs. Voltage Figure 6. Noise Figure vs. Voltage Figure 4. Noise Figure vs. Collector Current and Frequency at 2 V.

0.9 GHz

2.5 GHz

3 GHz

4 GHz

5 GHz

6 GHz

HBFP-0420 Die Model and PSPICE Parameters CMP9 R CMP7 R CMP8 R CMP69 R R-1 OH R=.194 OH R=7.78 OH R =12 OH TEMP= MODEL=DBE REGION= AREA= AREA=3 REGION= MODEL=BJTMODEL AREA= REGION= MODEL=DCS TEMP= AREA= REGION= MODEL = DBC TEMP= C =7E-3 pF C = 19E-3 pF XX CMP1 NPNBJTSUBST CMP5 C CMP6 C CMP2 DIODE CMP16 DIODE CMP3 DIODE B E XX XX C IS=I.40507E-17 BV= IBV= IMAX= XTI= TNOM=21 KF= AF= ISR= NR= IKF= NBV= IBVL= NBVL= FFE= RS= CJO=2.393E-14 TT= EG= VJ=0.729 M=0.44 N=1 FC=0.8 CMP10 DIODEMODELFORM # DIODE MODEL # MODEL = DBC IS=IE-24 BV= IBV= IMAX= XTI= TNOM=21 KF= AF= ISR= NR= IKF= NBV= IBVL= NBVL= FFE= RS=2.17347E2 CJO=8.974E-14 TT= EG= VJ=0.6 M=0.42 FC=0.8 CMP12 DIODEMODELFORM # DIODE MODEL # MODEL = DCS IS=IE-24 BV= IBV= IMAX= XTI= TNOM=21 KF= AF= ISR= NR= IKF= NBV= IBVL= NBVL= FFE= RS= CJO=2.593E-14 TT= EG= VJ=0.8971 M=2.292E-1 N=1.0029 FC=0.8 CMP11 DIODEMODELFORM # DIODE MODEL # MODEL = DCE NPN=yes PNP= VTF=0.8 ITF=2.21805486E-1 PTF=22 XTB=0.7 APPROXOB=yes Forward BF=1E6 IKE=1.4737E-1 ISE=7.094E-20 NE=1.006 VAF=4.4E1 NF=1 TF=5.3706E-12 XTF=20 Reverse BR=1 IKR=1.1E-2 ISC= NC=2 VAR=3.37 NR=1.005 TR=4E-9 Noise KF= AF= KB= AB= FB= Diode and junction EG=1.17 IS=4.4746E-18 IMAX= XTI=3 TNOM=21 Substrate IS5= NS= Parasitics RB=9.30144818 IRB=3.029562E-6 RBM=.1 RE= RC= CJC=2.7056E-14 VJC=.6775 MJC=0.3319 FC=0.8 CJE=7.474248E-14 VJE=0.9907 MJE=0.5063 CJS= VJS= MJS= CMP68 BITMODELFORM # BJT MODEL # MODEL = BJTMODEL XCJC=4.39790997E-1 This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more precise and accurate design, please refer to the measured data in this data sheet. Note: The value of beta was high (BF =1E6) to compensate for the fact that diode DBE reduces the current going into the base (current flows through DBE). The diodes are necessary to model the non-linear effects.

L = 0.2 nH L = 0.7 nH L = 0.2 nH L = 0.15 nH L = 0.22 nH LLB L LT1 L LLI L LL2 L C2T1 C C1T1 C CCEB C C = 0.08 pF AGROUND AGROUND BASE COLLECTOR EMITTER C = 0.05 pF C = 0.04 pF C = 0.04 pF L = 0.7 nH CMP44 L AGROUND AGROUND LLE L L = 0.1 nH LT2 L C2T2 C C = 0.1 pF AGROUND C1T2 C L = 0.5 nH L = 0.2 nH LL3 L LT3 L C1T3 C CCEC C C2T3 CC = 0.1 pF C = 0.01 pF AGROUND AGROUND C = 0.144 pF C = 0.05 pF CCBC C

SOT-343 (SC-70 4 Lead) Part Number Ordering Information Part Number Devices per Reel Container HBFP-0420-TR1 3000 7" Reel HBFP-0420-TR2 10,000 13" Reel HBFP-0420-BLK 100 antistatic bag E D A A1b TYP e 1.30 (0.051) BSC 1.15 (.045) BSC θ h C TYPL DIMENSIONS ARE IN MILLIMETERS (INCHES) DIMENSIONS MIN. 0.80 (0.031) 0 (0) 0.25 (0.010) 0.10 (0.004) 1.90 (0.075) 2.00 (0.079) 0.55 (0.022) 0.450 TYP (0.018) 1.15 (0.045) 0.10 (0.004) MAX. 1.00 (0.039) 0.10 (0.004) 0.35 (0.014) 0.20 (0.008) 2.10 (0.083) 2.20 (0.087) 0.65 (0.025) 1.35 (0.053) 0.35 (0.014) SYMBOL A b C D E e h L θ 1.15 (.045) REF 1.30 (.051) REF 1.30 (.051) 2.60 (.102)

P F W D 1 D E A 0 8° MAX. t1 (CARRIER TAPE THICKNESS) 5° MAX. B 0 K 0 DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A B 0 K 0 P D 1 2.24 – 0.10 2.34 – 0.10 1.22 – 0.10 4.00 – 0.10 1.00 + 0.25 0.088 – 0.004 0.092 – 0.004 0.048 – 0.004 0.157 – 0.004 0.039 + 0.010 CAVITY DIAMETER PITCH POSITION D P E 1.55 – 0.05 4.00 – 0.10 1.75 – 0.10 0.061 – 0.002 0.157 – 0.004 0.069 – 0.004 PERFORATION WIDTH THICKNESS W 8.00 – 0.30 0.255 – 0.013 0.315 – 0.012 0.010 – 0.0005 CARRIER TAPE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F 3.50 – 0.05 2.00 – 0.05 0.138 – 0.002 0.079 – 0.002 DISTANCE 03 03 03 03

www.hp.com/go/rf For technical assistance or the location of your nearest Hewlett-Packard sales office, distributor or representative call: Americas/Canada: 1-800-235-0312 or 408-654-8675 Far East/Australasia: Call your local HP sales office. Japan: (81 3) 3335-8152 Europe: Call your local HP sales office. Data subject to change. Copyright © 1998 Hewlett-Packard Co. Printed in U.S.A. 5968-0129E (6/98)