HBDM60V600W

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 9

Technical content

Features

  • Epitaxial Planar Die Construction
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen, Antimony and Beryllium Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Sub-Component P/N Reference Device Type MMBT2907A_DIE Q1 PNP Transistor MMBTA06_DIE Q2 NPN Transistor Mechanical Data
  • Case: SOT-363
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020D
  • Terminal Connections: See Schematic & Pin Configuration
  • Terminals: Finish—Matte Tin Annealed over Alloy 42 Lead- Frame. Solderable per MIL-STD-202, Method 208
  • Marking Information: See Page 6
  • Ordering Information: See Page 6
  • Weight: 0.016 grams (Approximate) Please support the datasheet update to Discontinued status 4 datasheet such as background of the datasheet. Ordering Information (Note 4) Part Number Compliance Case Packaging HBDM60V600W-7 Standard SOT-363 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen, Antimony and Beryllium-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl), <1000ppm antimony compounds and <1000ppm Beryllium. Marking Information Date Code Key Year 2006 2007 … 2019 2020 2021 2022 2023 2024 2025 Code T U … G H I J K L M Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Existing Product Top View Device Schematic EQ1 BQ2 EQ2CQ1 CQ2 MMBTA06 MMBT2907A BQ1 HB01 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: G = 2019) M = Month (ex: 9 = September) HB01 YM PART OBSOLETE - CONTACT US

Document number: DS30701 Rev. 9 - 4 2 of 9 www.diodes.com June 2021 © Diodes Incorporated HBDM60V600W OBSOLETE – PART DISCONTINUED Maximum Ratings: Total Device @TA = 25°C (unless otherwise specified) Characteristic Symbol Value Unit Operating and Storage Temperature Range TOP, Tstg -55 to +150 °C Thermal Characteristics: Total Device Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 200 mW Thermal Resistance, Junction to Ambient Air (Note 5) RϴJA 625 °C/W Maximum Ratings: Sub-Component Devices @TA = 25°C unless otherwise specified Characteristic Symbol Q1-PNP Transistor (MMBT2907A) Q2-NPN Transistor (MMBTA06) Unit Collector-Base Voltage VCBO -60 80 V Collector-Emitter Voltage VCEO -60 65 V Emitter-Base Voltage VEBO -5.5 6 V Collector Current - Continuous (Note 5) IC -600 500 mA Note: 5. Device mounted on FR-4 substrate printed circuit board with 1 inch square 2oz copper pad area Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage V(BR)CBO -60 — V IC = -10µA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 — V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.5 — V IE = -10µA, IC = 0 Collector Cutoff Current ICBO — -10 nA VCB = -50V, IE = 0 Collector Cutoff Current ICEX — -50 nA VCE = -30V, VEB(OFF) = -0.5V Base Cutoff Current IBL — -50 nA VCE = -30V, VEB(OFF) = -0.5V ON CHARACTERISTICS (Note 6) DC Current Gain hFE 100 100 100 100 300 IC = -100µA, VCE = -10V IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -150mA, VCE = -10V IC = -500mA, VCE = -10V Collector-Emitter Saturation Voltage VCE(SAT) — -0.3 -0.5 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(SAT) — -0.95 -1.3 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product fT 100 — MHz VCE = -2.0V, IC = -10mA, f = 100MHz SWITCHING CHARACTERISTICS Turn-On Time ton — 45 ns VCE = -30V, IC = -150mA, IB1 = -15mA Delay Time td — 10 ns Rise Time tr — 40 ns Turn-Off Time toff — 100 ns VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA Storage Time ts — 80 ns Fall Time tf — 30 ns

Document number: DS30701 Rev. 9 - 4 3 of 9 www.diodes.com June 2021 © Diodes Incorporated HBDM60V600W OBSOLETE – PART DISCONTINUED Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage V(BR)CBO 80 — — V IC = 100µA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 65 — — V IC = 1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6 — — V IE = 100µA, IC = 0 Collector-Base Cutoff Current ICBO — — 100 nA VCB = 80V, IE = 0 Collector Cutoff Current ICES — — 100 nA VCE = 90V, VBE = 0 Emitter-Base Cutoff Current IEBO — — 100 nA VEB = 5V, IC = 0 ON CHARACTERISTICS (Note 6) DC Current Gain hFE 250 — — — VCE = 1V, IC = 10mA 100 — — — VCE = 1V, IC = 100mA Collector-Emitter Saturation Voltage VCE(SAT) — 0.2 0.4 V IC = 100mA, IB = 10mA Base-Emitter Turn-on Voltage VBE(ON) 0.7 0.75 0.8 V VCE = 1V, IC = 100mA Base-Emitter Saturation Voltage VBE(SAT) — — 0.95 V IC = 100mA, IB = 5mA SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product fT 100 — — MHz VCE = 20V, IC = 10mA, f = 100MHz Notes: 6. Short duration pulse test used to minimize self-heating effect. Typical Characteristics @TA = 25°C unless otherwise specified 100 25 50 75 100 125 150 175 200 P , POWER DISSIPATION (mW)D T , AMBIENT TEMPERATURE (°C)A Fig. 1 Power Derating Curve 150 200 Note 5

Document number: DS30701 Rev. 9 - 4 4 of 9 www.diodes.com June 2021 © Diodes Incorporated HBDM60V600W OBSOLETE – PART DISCONTINUED PNP (MMBT2907A) Transistor (Q1) Plots 0.1 1.0 10 30 C, CAPACITANCE pF( ) f = 1MHz REVERSE VOLTAGE (V) Fig. 2 Typical Capacitance Cibo Cobo 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0.001 0.01 0.1 1 10 100 I = 1mAC I = 10mAC I = 30mAC I = 100mAC I = 300mAC -V , COLLECTOR-EMITTER VOLTAGE (V)CE -I , BASE CURRENT (mA)B Fig. 3 Typical Collector Saturation Region 0.001 0.01 0.1 0.1 1 10 100 1000 IC IB = 10 T = -55°CA T = 25°CA T = 150°CA -I , COLLECTOR CURRENT (mA)C Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current -V , COLLECTOR TO EMITTERCE(SAT) SATURATION VOLTAGE (V) 100 1000 10000 1 10 100 1000 h , DC CURRENT GAINFE -I , COLLECTOR CURRENT (mA)C Fig. 5 Typical DC Current Gain vs. Collector Current V = 5VCE T = 150°CA T = 25°CA T = -55°CA 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 1 10 100 V = 5VCE T = -55°CA T = 25°CA T = 150°CA -V , BASE EMITTER VOLTAGE (V)BE(ON) -I , COLLECTOR CURRENT (mA)C Fig. 6 Typical Base Emitter Voltage vs. Collector Current 100 1000 1 10 100 T = 25°CA f = 100MHz V = -5VCE -I , COLLECTOR CURRENT (mA)C Fig. 7 Typical Gain Bandwidth Product vs. Collector Current f , GAIN BANDWIDTH PRODUCT (MHz)T f AverageT

Document number: DS30701 Rev. 9 - 4 5 of 9 www.diodes.com June 2021 © Diodes Incorporated HBDM60V600W OBSOLETE – PART DISCONTINUED NPN (MMBTA06) Transistor (Q2) Plots 0.01 25 75 125 I , COLLECTOR-BASE CURRENT (nA)CBO T , AMBIENT TEMPERATURE (°C)A Fig. 8 Typical Collector-Cutoff Current vs. Ambient Temperature V = 80VCB 0.1 10050 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0.001 0.01 0.1 1 10 100 V , COLLECTOR EMITTER VOLTAGE (V)CE I BASE CURRENT (mA)B, Fig. 9 Typical Collector Saturation Region I = 1mAC I = 10mAC I = 30mAC I = 100mAC I = 300mAC 0.001 0.01 0.1 0.1 1 10 100 1000 V , COLLECTOR TO EMITTERCE(SAT) SATURATION VOLTAGE (V) I , COLLECTOR CURRENT (mA)C Fig. 10 Typical Collector Emitter Saturation Voltage vs. Collector Curren IC IB = 10 T = -55°CA T = 25°CA T = 150°CA 100 1000 10000 1 10 100 h , DC CURRENT GAINFE I , COLLECTOR CURRENT (mA)C Fig. 11 Typical DC Current Gain vs. Collector Cu T = 25°CA T = 150°CA T = -55°CA V = 5VCE 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 1 10 100 V , BASE EMITTER VOLTAGE (V)BE(ON) I , COLLECTOR CURRENT (mA)C Fig. 12 Typical Base Emitter Voltage vs. Collector Current V = 5VCE T = -55°CA T = 25°CA T = 150°CA 100 1000 1 10 T = 25°CA f = 30MHz V = 5VCE f AverageT f , GAIN BANDWIDTH PRODUCT (MHz)T I , COLLECTOR CURRENT (mA)C Fig. 13 Typical Gain Bandwidth Product vs. Collector Current

Document number: DS30701 Rev. 9 - 4 6 of 9 www.diodes.com June 2021 © Diodes Incorporated HBDM60V600W OBSOLETE – PART DISCONTINUED Current Schematic with Application Example R1 36 BQ1 EQ1 BQ2 CQ2 CQ2 MMBTA06 BQ1 MMBT2907A BQ2 Half H-Bridge MMBTA06 Reverse Forward HBDM60V600W CQ1CQ1 Half H-BridgeMotor D2Q1 MMBT2907A EQ2 9V-12V HBDM60V600W Note: D1, D2, D3, D4: Switching Diodes (MMBD4448) Q3, Q4: NPN Transistors (MMBTA06)

Document number: DS30701 Rev. 9 - 4 7 of 9 www.diodes.com June 2021 © Diodes Incorporated HBDM60V600W OBSOLETE – PART DISCONTINUED Application Example Schematic (with Package Pinouts) R 4 4 7 0 R e v e r s e R 3 4 7 0 C o n t r o l I n p u t 5 V / 0 V U 4 H B D M 6 0 V 6 0 0 W B Q 1 B Q 2 C Q 2 E Q 2 E Q 1 C Q 11 3 4 M M B D 4 44 8 HT W A 1 A 2 A 3 C 3 C 2 C 11 3 4 B C 8 4 6 B E Q 1 B Q 2 C Q 2 E Q 2 B Q 1 C Q 1 R 1 3 6 R 2 3 3 k U 1 M M B D 4 4 4 8 D W A 1 N C C2 A 2 N C C 11 3 4 C 1 U 2 H B D M 6 0 V 6 0 0 W B Q 1 B Q 2 C Q 2 E Q 2 E Q 1 C Q 11 3 4 M o t o r 1 k R 6 1 k

9 V - 1 2 V

Document number: DS30701 Rev. 9 - 4 8 of 9 www.diodes.com June 2021 © Diodes Incorporated HBDM60V600W OBSOLETE – PART DISCONTINUED Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 e D L b E F c a SOT363 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 0.95 b 0.10 0.30 0.25 c 0.10 0.22 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC F 0.40 0.45 0.425 L 0.25 0.40 0.30 a 0° 8° -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 Y1 G Y X C Dimensions Value (in mm) C 0.650 G 1.300 X 0.420 Y 0.600 Y1 2.500

Document number: DS30701 Rev. 9 - 4 9 of 9 www.diodes.com June 2021 © Diodes Incorporated HBDM60V600W OBSOLETE – PART DISCONTINUED IMPORTANT NOTICE 1. DIODES INCORPORATED AND I TS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. 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