H80N6HT HUIXIN | Alldatasheet

Document overview

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Technical content

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 6 H80N6HT 60V Trench N-Channel MOSFET Features:

  • Fast switching speed
  • 100% avalanche tested
  • Improved dv/dt capability
  • Enhanced Avalanche Ruggedness
  • Lead Free Applications:
  • Synchronous Rectification in SMPS
  • Hard Switching and High Speed Circuit
  • Power Managment
  • Load Switch

Ordering Information

Part Number Package Marking Packing Qty. H80N6HT H80N6HTO-220 T Tube 50 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-to-Source Voltage 60 V VGS Gate- to- Source Voltage ±20 V ID Continuous Drain Current TC=25℃ 80 AContinuous Drain Current TC=100℃ 58 IDM Pulsed Drain Current 320 PD Power Dissipation 107 W EAS Single Pulse Avalanche Engergy L = 0.5mH, RG = 25 Ω,TC=25℃ 280 mJ TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 ℃ Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case 1.4 -- ℃/ W RθJA Thermal Resistance Junction-Ambient 52 -- ℃/ W VDSS RDS(ON)(Typ ) ID 60V 7mΩ 80A

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 6 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage 60 -- -- V VGS=0V,ID=250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- 1 µA VDS=60V,VGS=0V IGSS Gate to Source Forward Leakage -- -- 100 nA VGS=20V ,VDS=0V Gate to Source Reverse Leakage -- -- -100 VGS=-20V ,VDS=0V VGS(TH) Gate Threshold Voltage 2 3 4 V VGS=VDS,ID=250µA RDS(on) Static Drain- to- Source On- Resistance -- 7 8 mΩ VGS=10V,ID=20A Dynamic Electrical Characteristics Ciss Input Capacitance -- 3000 -- pF VGS=0V VDS=30V f=1MHz Coss Output Capacitance -- 270 -- Crss Reverse Transfer Capacitance -- 240 -- Qg Total Gate Charge -- 72 -- nC VDS=48V ID=40A VGS=10V Qgs Gate- to- Source Charge -- 21.5 -- Qgd Gate-to-Drain(" Miller") Charge -- 28 -- Switching Characteristics td(ON) Turn- on Delay Time -- 8.5 -- nS VDS=30V ID=30A RG=3Ω VGS=10V trise Rise Time -- 7 -- td(OFF) Turn- OFF Delay Time -- 40 -- tfall Fall Time -- 15 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- -- 1.2 V IF=80A,VGS=0V trr Reverse Recovery Time -- 24 -- nS VR=30V,IF=20A di/dt=100A/µsQrr Reverse Recovery Charge -- 10 -- nC

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 6 Typical Characteristics

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 6

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 6 Test ircuits and Waveforms

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 6 Package outline drawing (TO-220 Unit: mm ) Symbol unit(mm) MIN MAX A 9.96 10.4 B 14.7 16.0 B1 8.82 9.60 C 4.24 4.67 C1 2.28 2.88 D 1.15 1.40 E 0.70 0.90 F 0.40 0.60 G 1.20 1.75 H 3.20 4.00 L 12.95 13.97 N 2.34 2.74 Q 2.44 3.04 3.74 3.94