H80N20HDC HUIXIN | Alldatasheet

Document overview

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Technical content

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 6 H80N20HDC 200V Trench N-Channel MOSFET Features:

  • Fast switching speed
  • 100% avalanche tested
  • Improved dv/dt capability
  • Enhanced Avalanche Ruggedness
  • Lead Free Applications:
  • Synchronous Rectification in SMPS
  • Hard Switching and High Speed Circuit
  • Power Managment
  • Load Switch

Ordering Information

Part Number Package Marking Packing Qty. H80N20HDC TO-263 H80N20HDC Tape&reel 800 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-to-Source Voltage 200 V VGS Gate- to- Source Voltage ±30 V ID Continuous Drain Current TC=25℃ 80 AContinuous Drain Current TC=100℃ 51 IDM Pulsed Drain Current 288 PD Power Dissipation 260 W EAS Single Pulse Avalanche Engergy L = 0.5mH, RG = 25 Ω,TC=25℃ 220 mJ TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case 0.57 -- ℃/ W RθJA Thermal Resistance Junction-Ambient 60 -- ℃/ W VDSS RDS(ON)(Typ ) ID 200V 18mΩ 80A

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 6 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage 200 -- -- V VGS=0V,ID=250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- 1 µA VDS=200V,VGS=0V IGSS Gate to Source Forward Leakage -- -- 100 nA VGS=20V ,VDS=0V Gate to Source Reverse Leakage -- -- -100 VGS=-20V ,VDS=0V VGS(TH) Gate Threshold Voltage 3 4 5 V VGS=VDS,ID=250µA RDS(on) Static Drain- to- Source On- Resistance -- 18 22 mΩ VGS=10V,ID=40A Dynamic Electrical Characteristics Ciss Input Capacitance -- 4280 -- pF VGS=0V VDS=25V f=1MHz Coss Output Capacitance -- 460 -- Crss Reverse Transfer Capacitance -- 156 -- Rg Gate Resistance -- 1.4 -- Ω f=1MHz Qg Total Gate Charge -- 80 -- nC VDS=160V ID=40A VGS=10V Qgs Gate- to- Source Charge -- 35 -- Qgd Gate-to-Drain(" Miller") Charge -- 25 -- Switching Characteristics td(ON) Turn- on Delay Time -- 32 -- nS VDS=100V ID=40A RG=2.5Ω VGS=10V trise Rise Time -- 62 -- td(OFF) Turn- OFF Delay Time -- 46 -- tfall Fall Time -- 22 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- -- 1.3 V IF=40A,VGS=0V trr Reverse Recovery Time -- 144 -- nS VR=100V,IF=40A di/dt=100A/µsQrr Reverse Recovery Charge -- 0.6 -- nC Notes: * 1. Repetitive rating, pulse width limited by maximum junction temperature. * 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 6 Typical Characteristics VdsDrain-SourceVoltage(V) Figure1OutputCharacteristics VgsGate-SourceVoltage (V) Figure2TransferCharacteristics ID-Drain Current(A) Figure3Rdson-DrainCurrent QgGate Charge (nC) Figure5GateCharge RdsonOn-Resistance(Ω) ID-Drain Current(A) ID-Drain Current(A) VgsGate-SourceVoltage (V) RDS(ON)Standardizing TJ- Temperature(℃) Figure4 Rds(on) VS Temperature Characteristic IDR- -ReverseDrain Current(A) VsdSource-Drain Voltage(V) Figure6Drain -DrainDiodeForward current and temperature

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 6 VdsDrain-SourceVoltage(V) Figure7CapacitancevsVds VdsDrain-SourceVoltage(V) Figure9SafeOperationArea TJ-JunctionTemperature(℃) Figure8 PowerDe-rating ID-Drain Current(A) CCapacitance(pF) SquareWavePluseDuration(sec) Figure10NormalizedMaximumTransientThermalImpedance r(t),Normalized Effective TransientThermalImpedance PowerDissipation (W)

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 6 Test ircuits and Waveforms

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 6 Package outline drawing (TO-263 Unit: mm )