H8050P AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com H8050P~H8050Q GENERAL PURPOSE TRANSISTOR NPN SILICON REV1.0 - JUN 2016 RELEASED - - 1 - DESCRIPTION FEATURES The H8050P~H8050Q are available in SOT-23 package. High current capacity in compact package. IC =1.5A. Epitaxial planar type. NPN complement: H8050 Available in SOT-23 package ORDERING INFORMATION PIN DESCRIPTION Package Type Part Number SOT-23 H8050P H8050Q Note 3,000pcs/Reel AiT provides all RoHS Compliant Products
AiT Semiconductor Inc. www.ait-ic.com H8050P~H8050Q GENERAL PURPOSE TRANSISTOR NPN SILICON REV1.0 - JUN 2016 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS VCEO, Collector-Emitter Voltage 50V VCBO, Collector-Base Voltage 50V VEBO, Emitter-Base Voltage 6V IC, Collector Current-continuous 1500mAdc Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS Parameter Symbol Max. Unit Total Dissipation Power PD 225 mW Junction and Storage Temperature TJ , TSTG -55 to +150 °C
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Collector-Emitter Breakdown Voltage V(BR)CEO IC=2.0mA,IB=0 50 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=100μΑ ,IC=0 6 - - V Collector-Base Breakdown Voltage V(BR)CBO IC=100μΑ ,IE=0 50 - - V Collector Cutoff Current ICBO VCB=35V,IE=0 - - 100 nA Emitter Cutoff Current IEBO VEB=6V,IC=0 - - 100 nA Base-Emitter Voltage VBE VCE=1V,IC =10mA - 0.66 1 V DC Current Gain hFE IC=100mA,VCE=1V P 100 - 200 Q 160 - 320 IC=800mA,VCE =1V 40 - - Collector-Emitter Saturation Voltage VCE(S) IC=800mA, IB=80mA - - 0.5 V
AiT Semiconductor Inc. www.ait-ic.com H8050P~H8050Q GENERAL PURPOSE TRANSISTOR NPN SILICON REV1.0 - JUN 2016 RELEASED - - 3 - TYPICAL PERFORMANCE CHARACTERISTICS TA = 25℃ 1. hFE-IC, VCE=1V 2. VCESAT-IC,IC/IB=10 3. IC-VBE 4. IC-VCE
AiT Semiconductor Inc. www.ait-ic.com H8050P~H8050Q GENERAL PURPOSE TRANSISTOR NPN SILICON REV1.0 - JUN 2016 RELEASED - - 4 -
PACKAGE INFORMATION
Dimension in SOT-23 Package (Unit: mm) DIM MILLIMETERS INCHES MIN MAX MIN MAX A 2.80 3.04 0.1102 0.1197 B 1.20 1.40 0.0472 0.0551 C 0.89 1.11 0.0350 0.0440 D 0.37 0.50 0.0150 0.0200 G 1.78 2.04 0.0701 0.0807 H 0.013 0.100 0.0005 0.0040 J 0.085 0.177 0.0034 0.0070 K 0.35 0.69 0.0140 0.0285 L 0.89 1.02 0.0350 0.0401 S 2.10 2.64 0.0830 0.1039 V 0.45 0.60 0.0177 0.0236
AiT Semiconductor Inc. www.ait-ic.com H8050P~H8050Q GENERAL PURPOSE TRANSISTOR NPN SILICON REV1.0 - JUN 2016 RELEASED - - 5 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.