H8050-B

H8050_15 KEXIN | Alldatasheet

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Technical content

1www.kexin.com.cn ■ Features ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage VCEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage VEBO IE= 100μA, IC=0 5 V Collector cut-off current ICBO VCB= 40 V,IE=0 0.1 μA Collector cut-off current ICEO VCE= 20V, IB=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA VCE= 1V, IC= 100mA 85 400 VCE= 1V, IC= 800mA 40 Collector-emitter saturation voltage VCE(sat) IC=800mA, IB= 80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB=80mA 1.2 V Base-emitter on voltage VBE(on) Ic=1V,VCE=10mA 1 V Base-emitter positive favor voltage VBEF IB=1A 1.55 V output capacitance Cob VCB=10V,IE=0,f=1MHz 15 pF Transition frequency fT VCE= 10V, IC=50mA 100 MHz hFEDC current gain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V Collector current IC 1.5 A Collector power dissipation PC 0.5 W Junction temperature Tj 150 ℃ Storage temperature Tstg -55 to +150 ℃ NPN Transistors H8050

• Collector Power Dissipation: PC=0.5W
• Collector Current: IC=1.5A 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Classification of hfe(1) Type H8050-B H8050-C H8050-D H8050-D3 Range 85-160 120-200 160-300 300-400 Marking 8050B 8050C 8050D 8050D3 Comlementary to H8550●