H70N10D HUIXIN | Alldatasheet

Document overview

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Technical content

Features

  • Low RDS(ON) & FOM
  • Extremely low switching loss
  • Excellent reliability and uniformity
  • Fast switching and soft recovery Product Name Package Marking H70N10D TO-252 Absolute Maximun Ratings °C(T =25 unless otherwise specified)J Marking Information Parameter V A Unit VDS VGS ID PD T ,TJ STG Symbols Drain-Source Voltage Gate-Source Voltage (1)Continuous Drain Current , T =25°CC (3)Power dissipation , T =25°CC Operating Junction and Storage Temperature 100 ±20 280 -55 ~ +150 Value V w A V = 100 VDS ( )R =9.2mΩ Typ(on)DS I = 280A D,pulse Q = 25nCg Applications:
  • PD charger
  • Motor driver
  • Switching voltage regulator
  • DC-DC convertor
  • Switching mode power supply www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 5 Package & Pin information Packing Qty. (2)Pulsed drain current , T =25 °CC A(1)Continuous diode forward current , T =25°CC ID,pulse EAS (5)Single pulsed avalanche energy 43 mJ Thermal Characteristics Parameter UnitSymbols Thermal Resistance from Junction to Case Value 1.8 °C/W RθJC RθJA (4)Thermal Resistance from Junction to Ambient IS A(2)Diode pulsed current , T =25 °CCIS,pulse 280 H70N10D Tape&reel 2500 PCS N-Channel Power MOSFET Pin1-Gate Pin2-Dran Pin3-Source Pin2-D Pin1-G Pin3-S TO-252

www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 5 Electrical Characteristics (T =25 unless otherwise specified)J °C Parameter V Unit V(BR)DSS VGS(th) IDSS Ciss Symbols Drain-Source Breakdown Voltage Gate Threshold Voltage 100 Typ. Test Conditions V =0, I =250μAGS D td(on) tf Max.Min. V 1.0 2.5 V =V , I =250μAGS DS D Zero Gate Voltage Drain Current Gate-Source Leakage Current V =0, V =±20VDS GSnA±100 Input Capacitance Output Capacitance Reverse Transfer Capacitance 1630 745 pF V =0GS V =25VDS f=100kHz Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time ns V =50VDS 10VV =GS I =25AD 2ΩR =G(ext) Total Gate Charge Gate to Source Charge Gate to Drain (Miller) Charge nC V =50VDS 10VV =GS I =25AD μA V =100V, V =0,T =25°CDS GS J1.0 Body Diode Characteristics Parameter Unit VSD Symbols Diode Forward Voltage Typ. Test Conditions V =0, I =50AGS S Max. V =25V R I =25ΑS di/dt=100A/μs ns nC Qrr Reverse Recover Time Reverse Recovery Charge 60 Min. V RDS(on) Drain-Source On-State Resistance 9.2 10 mΩ V =10V, I =50AGS D IGSS Gate resistanceRG 1.5 f =1 MHZ, Open drainΩ Coss Crss Gate plateau voltageVplateau 2.8 V Qg Qgs Qgd tr td(off) 1.3 AIrrm Peak reverse recovery current 2.2 trr Note (1) Calculated continuous current based on maximum allowable junction temperature. (2) Repetitive rating; pulse width limited by max. junction temperature. (3) Pd is based on max. junction temperature, using junction-case thermal resistance. 2(4) The value of R is measured with the device mounted on 1 in FR-4 board with 2oz. Copper,θJA in a still air environment with T =25 °C.A (5) V =50V,V =10 V, L=0.3 mH, starting T =25 °CDD GS j RDS(on) Drain-Source On-State Resistance 12 13.5 mΩ V =4.5V, I =50AGS D

www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 5 Electrical Characteristics Diagrams Fig1. Typ. output characteristics Drain-Source Voltage-V (V)DS 0 2 3 4 5 T =25°CJ Drain-Source Current-I (A)D V =3.5VGS 120 160 200 V =3VGS V =10VGS V =4VGS V =4.5VGS 6 8 10 12 100 1000 Fig2. Typ. transfer characteristics Drain-Source Current-I (A)D Gate-Source Voltage-V (V)GS V =10VDS T =25°CJ Fig4. Typical Gate-Charge Gate-Charge-Q (nC)g 20 30 2515 5 V =50VDS I =25AD Gate-Source Voltage-V (V)GS -25 Fig5. Drain-source breakdown voltage 75 125 175 Junction Temperature-T (°C)J 15010050250-50 114 102 106 110 Drain-source breakdown voltage -V (V)(BR)DSS I =250μAD V =0GS Drain-Source Voltage-V (V)DS 20 40 60 80 100 010 110 210 310 Capacitance ( pF) Fig3. Typical Capacitance vs. Drain-to-Source Voltage V =0GS f =100kHz Coss Ciss Crss Fig6. Drain-source on-state resistance On Resistance -R (mΩ)DS(on) Junction Temperature-T (°C)J -25 75 125 17515010050250-50 V =10VGS I =50AD

www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 5 Source-drain voltage -V (V)SD 110 310 Source current- I (A)S Fig8. Forward characteristic of body diode T =25°CJ Fig9. Drain-source on-state resistance 180 Drain current-I (A)D 150120 6030 On Resistance -R (mΩ)DS(on) V =5VGS V =4.5VGS V =10VGSV =4VGSV =3.5VGS -25 Fig7. Threshold voltage 75 125 175 Junction Temperature-T (°C)J 15010050250-50 Threshold voltage-V (V)GS(th) I =250μAD 200 Fig10. Drain Current vs. Case Temperature 75 125 175 Case Temperature-T (°C)C 15010050250 Drain-Source Continupus Current-I (A)D 200 Fig11. Safe Operating Area Drain-Source Voltage-V (V)DS Drain-Source Current-I (A)D T =25°CC T =175°CJmax 1E3 1E2 1E1 1E0 1E-1 0.1 10 100 400 0.1ms 0.01ms 1ms 10ms DC R LimitedDS(on) Fig12. Max. transient thermal impedance Rectangular Pulse Duration (sec) 1E-4 1E-3 1E-2 1E-1 Thermal Response-Z (°C/W)thJC 1E-5 1E-2 1E-1 1E0 1E1 D=1 0.02 0.05 0.5 0.2 0.1 Single Pulse 0.01 Duty=t /Tp

www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 5

Package Information

UNIT: mm BACK VIEW L A c E D H e L2L1 HEAT-SINK PLANE 2×b Symbol A 2.402.18 b c D e H E L Min Nom Max 2.28 0.200 0.890.63 0.76 4.924.32 4.83 0.610.40 0.50 6.235.96 6.10 6.35 6.60

4.57 BSC

10.59.40 10.0 2.041.27 1.52 5.385.21 5.25 A2 1.170.88 1.02 b2 5.504.95 5.34 0.630.45 0.50 6.80 3.002.86 2.92 1.270.88 1.02