H60N3FA HUIXIN | Alldatasheet
Document overview
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- PDF pages: 6
Technical content
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 6 H60N3FA 30V Trench Single N-Channel MOSFET Features:
- Fast switching speed
- 100% avalanche tested
- Improved dv/dt capability
- Enhanced Avalanche Ruggedness
- Lead Free Applications:
- Synchronous Rectification in SMPS
- Hard Switching and High Speed Circuit
- Power Tools
- Motor Control
Ordering Information
Part Number Package Marking Packing Qty. H60N3FA DFN3*3 H60N3FA Tape&reel 5000 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-to-Source Voltage 30 V VGS Gate- to- Source Voltage ±20 V ID Continuous Drain Current TC=25℃ 60 AContinuous Drain Current TC=100℃ 45 IDM Pulsed Drain Current 300 PD Power Dissipation 65 W EAS Single Pulse Avalanche Engergy L = 0.5mH, RG = 25 Ω,TC=25℃ 300 mJ TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case 1.8 -- ℃/ W VDSS RDS(ON)(Typ ) ID 30V 4.2mΩ 60A
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 6 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage 30 -- -- V VGS=0V,ID=250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- 1 µA VDS=30V,VGS=0V IGSS Gate to Source Forward Leakage -- -- 100 nA VGS=20V ,VDS=0V Gate to Source Reverse Leakage -- -- -100 VGS=-20V ,VDS=0V VGS(TH) Gate Threshold Voltage 1.0 1.7 2.2 V VGS=VDS,ID=250µA RDS(on) Static Drain- to- Source On- Resistance(Note*2) -- 4.2 5.2 mΩ VGS=10V,ID=20A -- 6.5 8.5 mΩ VGS=4.5V,ID=20A Dynamic Electrical Characteristics Ciss Input Capacitance -- 1970 -- pF VGS=0V VDS=15V f=1MHz Coss Output Capacitance -- 210 Crss Reverse Transfer Capacitance -- 175 -- Qg Total Gate Charge -- 37 nC VDS=15V ID=30A VGS=10V Qgs Gate- to- Source Charge -- 5.8 -- Qgd Gate-to-Drain(" Miller") Charge -- 7.6 -- Switching Characteristics td(ON) Turn- on Delay Time -- 20 -- nS VDS=15V ID=30A RG=2.7Ω VGS=10V trise Rise Time -- 15 -- td(OFF) Turn- OFF Delay Time -- 60 -- tfall Fall Time -- 10 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- -- 1.2 V IF=30A,VGS=0V trr Reverse Recovery Time -- 32 -- nS VR=15V,IF=60A di/dt=100A/µsQrr Reverse Recovery Charge -- 12 -- nC Notes: * 1. Repetitive rating, pulse width limited by maximum junction temperature. * 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 0.5%
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 6 Test ircuits and Waveforms
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 6