H60N2D HUIXIN | Alldatasheet
Document overview
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- PDF pages: 6
Technical content
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 6 H60N2D 20V Single N-Channel MOSFET Features:
- Fast switching speed
- 100% avalanche tested
- Improved dv/dt capability
- Enhanced Avalanche Ruggedness
- Lead Free Applications:
- Synchronous Rectification in SMPS
- Hard Switching and High Speed Circuit
- Power Tools
- UPS
- Motor Control
Ordering Information
Part Number Package Marking Packing Qty. H60N2D TO-252 H60N2D Tape&reel 2500 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-to-Source Voltage 20 V VGS Gate- to- Source Voltage ±12 V ID Continuous Drain Current TC=25℃ 60 AContinuous Drain Current TC=100℃ 40 IDM Pulsed Drain Current 230 PD Power Dissipation 37.5 W EAS Single Pulse Avalanche Engergy L = 0.5mH, RG = 25 Ω,TC=25℃ 132 mJ TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case -- 4 ℃/ W RθJA Thermal Resistance Junction-Ambient -- 55 ℃/ W VDSS RDS(ON)(Typ ) ID 20V 6mΩ 60A
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 6 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage 20 -- -- V VGS=0V,ID=250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- 1 µA VDS=20V,VGS=0V Zero Gate Voltage Drain Current (125℃) -- -- 100 µA VDS=20V,VGS=0V IGSS Gate to Source Forward Leakage -- -- 100 nA VGS=12V ,VDS=0V Gate to Source Reverse Leakage -- -- -100 VGS=-12V ,VDS=0V VGS(TH) Gate Threshold Voltage 0.5 0.7 0.9 V VGS=VDS,ID=250µA RDS(on) Static Drain- to- Source On- Resistance -- 4.5 6 mΩ VGS=10V,ID=20A -- 6 7 mΩ VGS=4.5V,ID=20A Dynamic Electrical Characteristics Ciss Input Capacitance -- 2246 -- pF VGS=0V VDS=10V f=1MHz Coss Output Capacitance -- 200 -- Crss Reverse Transfer Capacitance -- 130 -- Rg Gate Resistance -- 1.2 -- Ω f=1MHz Qg Total Gate Charge -- 23 -- nC VDS=10V ID=20A VGS=4.5V Qgs Gate- to- Source Charge -- 4.6 -- Qgd Gate-to-Drain(" Miller") Charge -- 7 -- Switching Characteristics td(ON) Turn- on Delay Time -- 13 -- nS VDS=10V RL=0.5Ω VGS=4.5V RG=3Ω trise Rise Time -- 32 -- td(OFF) Turn- OFF Delay Time -- 47 -- tfall Fall Time -- 94 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- 0.7 1.0 V IF=20A,VGS=0V trr Reverse Recovery Time -- 11 -- nS IF=20A di/dt=100A/µsQrr Reverse Recovery Charge -- 2.5 -- nC
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 6 Typical Characteristics
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 6
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 6 Test ircuits and Waveforms
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 6 Package outline drawing (TO-252 Unit: mm )