H5N6001P RENESAS | Alldatasheet

Document overview

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Technical content

Features

  • Low on-resistance
  • Low leakage current
  • High speed switching
  • Low gate charge (Qg) Outline TO-3P 2 3 D S G 1. Gate 2. Drain (Frange) 3. Source

Rev.0, May 2001, page 2 of 2 Absolute Maximum Ratings (Ta = 25°°°°C) Item Symbol Value Unit Drain to source voltage V DSS 600 V Gate to source voltage V GSS ±30 V Drain current I D 20 A Drain peak current I D (pulse)* 80 A Body-drain diode reverse drain current IDR 20 A Body-drain diode reverse drain peak current IDR (pulse)* 80 A Avalanche current I AP* 6.5 A Channel dissipation Pch* 150 W Channel to case thermal inpedance θ ch-c 0.833 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. Tch ≤ 150°C

Rev.0, May 2001, page 3 of 3 Electrical Characteristics (Ta = 25°°°°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 600 — — V I D = 10 mA, VGS = 0 Zero gate voltage drain current I DSS — — 1 µA V DS = 600 V, VGS = 0 Gate to source leak current I GSS — — ±0.1 µA V GS = ±30 V, VDS = 0 Gate to source cutoff voltage V GS(off) 3.0 — 4.0 V V DS = 10 V, ID = 1 mA Forward transfer admittance |y fs| 12 20 — S I D = 10 A, VDS = 10 V* Static drain to source on state resistance RDS(on) — 0.30 0.38 Ω I D = 10 A, VGS = 10 V* Input capacitance Ciss — 4640 — pF V DS = 25 V Output capacitance Coss — 340 — pF V GS = 0 Reverse transfer capacitance Crss — 70 — pF f = 1 MHz Turn-on delay time td(on) — 60 — ns V DD ≅ 300 V, ID = 10 A Rise time tr — 100 — ns V GS = 10 V Turn-off delay time td(off) — 220 — ns R L = 30 Ω Fall time tf — 90 — ns Rg = 10 Ω Total gate charge Qg — 135 — nC V DD = 480 V Gate to source charge Qgs — 20 — nC V GS = 10 V Gate to drain charge Qgd — 65 — nC I D = 20 A Body-drain diode forward voltage VDF — 0.9 1.4 V I F = 20 A, VGS = 0 Body-drain diode reverse recovery time trr — 590 — ns I F = 20 A, VGS = 0 diF/dt = 100 A/µs Body-drain diode reverse recovery charge Qrr — 6.5 — µC Note: 4. Pulse test

Rev.0, May 2001, page 4 of 4 Main Characteristics 200 150 100 0 50 100 150 200 0.3 0.1 131 0 30 100 300 1000 0 4 8 12 16 0 2468 0.03 0.01 100 Ta = 25°C 10 V V = 4.5 VGS 5 V 5.5 V Tc = 75°C 25°C -25°C Channel Dissipation Pch (W) Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage V (V)DS Drain Current I (A)D Maximum Safe Operation Area Drain to Source Voltage V (V) Drain Current I (A)D Typical Output Characteristics DS Pulse Test Gate to Source Voltage V (V)GS Drain Current I (A) Typical Transfer Characteristics D V = 10 VDS Pulse Test 100 µs 1 ms PW = 10 ms (1shot) DC Operation (Tc = 25 °C) µs 6 V 8 V Operation in this area is limited by R DS(on)

Rev.0, May 2001, page 5 of 5 0 48 12 16 20 1 5 20 100 21 0 5 0 0.5 0.2 0.1 0.8 0.6 0.4 0.2 –25 0 25 50 75 100 125 150 0.1 0.2 2 200.5 5 50 100 100 0.5 0.2 0.1 1 10 Drain to Source Saturation Voltage VS. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 25°C Tc = –25°C 75°C DSV = 10 V Pulse Test V = 10 VGS Pulse Test I = 20 AD 10 A 5 A Pulse Test 10 A 5 A I = 20 AD Gate to Source Voltage V (V) V (V)DS(on) Drain to Source Saturation Voltage Drain Current I (A) Drai to Source on State Resistance RDS(on) Pulse Test V GS = 10 V, 15 V GS D (Ω) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Case Temparature Tc (°C) Drain Current I (A)D Static Drain to Source on State Resistance (Ω)RDS(on) |yfs| (S)Forward Transfer Admittance

Rev.0, May 2001, page 6 of 6 0.1 0.3 1 3 10 30 100 1000 200 500 100 0 50 100 150 200 250 2000 5000 10000 1000 100 200 500 1000 800 600 400 200 40 80 120 160 200 10000 1000 100 0.1 0.3 1 3 10 30 100 V = 0 f = 1 MHz GS Ciss Coss Crss I = 20 AD VDS VGS di / dt = 100 A / µs V = 0, Ta = 25°CGS V = 100 V 300 V 480 V DD V = 480 V 300 V 100 V DD rt rt d(on)t d(off)t t f V = 10 V, V = 300 V PW = 5 µs, duty ≤ 1% R = 10 Ω GS DD G Body-Drain Diode Reverce Recovery Time Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) Capacitance C (pF) Reverse Drain Current I (A)DR Drain to Source Voltage V (V)DS Dynamic Input Characteristics Switching Characteristics Drain to source Voltage V (V)DS Gate to Source Voltage V (V)GS Switching Time t (ns) Gate Charge Qg (nC) Drain Current I (A)D

Rev.0, May 2001, page 7 of 7 V = 0 VGS 5V, 10 V Pulse Test -50 0 50 100 150 200 I = 10mAD 1mA0.1mA V = 10 VDS Vin Monitor D.U.T. Vin 10 V R L V = 300 V DD trtd(on) Vin 90% 90% 10% 10%Vout td(off) Vout Monitor 10 Ω 90% 10% tf Switching Time Test Circuit Waveform Reverce Drain Current vs. Source to Drain Voltage Gate to Source Cutoff Voltage vs. Case Temparature Reverce Drain Current I (A)DR Gate to SourceCutoff Voltage VGS(off) (V) Source Drain Voltage V (V)SD Case Temparature Tc (°C)

Rev.0, May 2001, page 8 of 8 0.3 0.1 0.03 0.01 10 µ 100 µ 1 m 10 m 100 m 1 10 DMP PW T D = PW T ch – c(t) = s (t)  ch – c ch – c = 0.833°C/W, Tc = 25°C θ γ θ θ Tc = 25°C D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse Pulse Width PW (s) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width

Rev.0, May 2001, page 9 of 9 Package Dimensions φ3.2 ± 0.2 4.8 ± 0.2 1.5 0.3 2.8 0.6 ± 0.21.0 ± 0.2 15.6 ± 0.3 0.5 1.0 5.0 ± 0.3 1.6 1.4 Max 2.0 2.0 14.9 ± 0.2 3.6 0.9 1.0 Hitachi Code JEDEC EIAJ Mass (reference value) TO-3P Conforms 5.0 g As of January, 2001 Unit: mm

Rev.0, May 2001, page 10 of 10 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Hitachi Asia Ltd. Hitachi Tower

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