H5N6001P-E

H5N6001P_05 RENESAS | Alldatasheet

Document overview

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• PDF pages: 7

Technical content

Features

• Low on-resistance
• Low leakage current
• High speed switching
• Low gate charge (Qg) Outline D S G (Package name: TO-3P) 1. Gate 2. Drain (Flange) 3. Source

Rev.3.00 Sep 07, 2005 page 2 of 6 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Drain to source voltage V DSS 600 V Gate to source voltage V GSS ±30 V Drain current I D 20 A Drain peak current I D (pulse) Note 1 80 A Body-drain diode reverse drain current I DR 20 A Body-drain diode reverse drain peak current I DR (pulse) Note 1 80 A Avalanche current I AP Note 3 6.5 A Channel dissipation Pch Note 2 150 W Channel to case thermal Impedance θ ch-c 0.833 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. Tch ≤ 150°C

Electrical Characteristics

(Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS 600 — — V I D = 10 mA, VGS = 0 Zero gate voltage drain current I DSS — — 1 µA V DS = 600 V, VGS = 0 Gate to source leak current I GSS — — ±0.1 µA V GS = ±30 V, VDS = 0 Gate to source cutoff voltage V GS (off) 3.0 — 4.0 V V DS = 10 V, ID = 1 mA Forward transfer admittance |y fs| 12 20 — S I D = 10 A, VDS = 10 V Note 4 Static drain to source on state resistance R DS (on) — 0.30 0.38 Ω I D = 10 A, VGS = 10 V Note 4 Input capacitance Ciss — 4640 — pF Output capacitance Coss — 340 — pF Reverse transfer capacitance Crss — 70 — pF VDS = 25 V VGS = 0 f = 1 MHz Turn-on delay time t d (on) — 60 — ns Rise time t r — 100 — ns Turn-off delay time t d (off) — 220 — ns Fall time t f — 90 — ns VDD ≅ 300 V ID = 10 A VGS = 10 V RL = 30 Ω Rg = 10 Ω Total gate charge Qg — 135 — nC Gate to source charge Qgs — 20 — nC Gate to drain charge Qgd — 65 — nC VDD = 480 V VGS = 10 V ID = 20 A Body-drain diode forward voltage V DF — 0.9 1.4 V I F = 20 A, VGS = 0 Body-drain diode reverse recovery time t rr — 590 — ns Body-drain diode reverse recovery charge Q rr — 6.5 — µC IF = 20 A, VGS = 0 diF/dt = 100 A/µs Note: 4. Pulse test

Rev.3.00 Sep 07, 2005 page 3 of 6 Main Characteristics 200 100 150 50 100 150 200 0.3 0.1 1 3 10 30 100 300 1000 4 8 12 16 20 2468 0.03 0.01 100 Ta = 25°C 10 V VGS = 4.5 V 5 V Tc = 75°C 25°C –25°C 6 V 8 V 5.5 V Channel Dissipation Pch (W) Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Drain Current ID (A) Maximum Safe Operation Area Operation in this area is limited by R DS(on) Gate to Source Voltage VGS (V) Drain Current ID (A) Typical Transfer Characteristics VDS = 10 V Pulse Test Drain to Source Voltage VDS (V) Drain Current ID (A) Typical Output Characteristics Pulse Test 48 1 2 1 6 2 0 15 2 0 1 0 021 0 5 0 0.5 0.2 0.1 ID = 20 A 10 A 5 A VGS = 10 V, 15 V Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (V) Pulse Test Drain to Source on State Resistance RDS(on) (Ω) Static Drain to Source on State Resistance vs. Drain Current Pulse Test Drain Current ID (A) µs100 µs 1 msPW = 10 ms (1shot) DC Operation (Tc = 25°C)

Rev.3.00 Sep 07, 2005 page 4 of 6 0.2 0.4 0.6 0.8 –25 0 50 25 75 125 100 150 0.1 0.2 1 2 5 20 50 100 100 0.5 0.2 0.1 0.5 10 25°C Tc = –25°C 75°C VGS = 10 V 10 A 5 A ID = 20 A Drain Current ID (A) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) VDS = 10 V Pulse Test Case Temperature Tc (°C) Static Drain to Source on State Resistance RDS(on) (Ω) Static Drain to Source on State Resistance vs. Temperature Pulse Test 0.1 0.3 1 3 10 30 100 1000 200 500 100 0 50 100 150 200 250 5000 10000 2000 100 200 500 1000 1000 800 600 400 200 40 80 120 160 200 10000 1000 100 0.1 0.3 1 3 10 30 100 VGS = 0 f = 1 MHz Ciss Coss Crss ID = 20 A VDS VGS VDD = 480 V 300 V 100 V di / dt = 100 A / µs VGS = 0, Ta = 25°C tr tr td(on) td(off) tf Reverse Drain Current IDR (A) Reverse Recovery Time trr (ns) Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) Drain to Source Voltage VDS (V) Switching Time t (ns) Drain Current ID (A) Switching Characteristics Gate Charge Qg (nC) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Gate to Source Voltage VGS (V) VDD = 100 V 300 V 480 V VGS = 10 V, VDD = 300 V PW = 5 µs, duty ≤ 1 % RG = 10 Ω

Rev.3.00 Sep 07, 2005 page 5 of 6 VGS = 0 V –50 0 50 100 150 200 ID = 10 mA 1 mA0.1 mA VDS = 10 V trtd(on) Vin 90% 90% 10% 10%Vout td(off) 90% 10% tf

5 V, 10 V

Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) Pulse Test Case Temperature Tc (°C) Gate to Source Cutoff Voltage vs. Case Temperature Gate to Source Cutoff Voltage VGS(off) (V) Switching Time Test Circuit Waveform 0.3 0.1 0.03 0.01 10 µ 100 µ 1 m 10 m 100 m 1 10 PDM PW T D = PW T θch – c (t) = γ s (t)  θch – c θch – c = 0.833°C/W, Tc = 25°C Tc = 25°C D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse Pulse Width PW (S) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width Vin Monitor D.U.T. Vin 10 V RL Vout Monitor 10 Ω VDD = 300 V

Rev.3.00 Sep 07, 2005 page 6 of 6 Package Dimensions φ3.2 ± 0.2 4.8 ± 0.2 1.5 0.3 2.8 0.6 ± 0.21.0 ± 0.2 15.6 ± 0.3 0.5 1.0 5.0 ± 0.3 1.6 1.4 Max 2.0 2.0 14.9 ± 0.2 3.6 0.9 1.0 Package Name PRSS0004ZE-A TO-3P / TO-3PV MASS[Typ.] 5.0gSC-65 RENESAS CodeJEITA Package Code Unit: mm

Ordering Information

Part Name Quantity Shipping Container H5N6001P-E 360 pcs Box (Tube) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.

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