H5N50G HUIXIN | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 6 H5N50G 500V N-Channel MOSFET Features:
- Fast switching speed
- 100% avalanche tested
- Improved dv/dt capability
- Enhanced Avalanche Ruggedness
- Lead Free Applications:
- Switch Mode Power Supply(SMPS)
- Adapter & Charger
- AC-DC Switching Power Supply
Ordering Information
Part Number Package Marking Packing Qty. H5N50G TO-252 H5N50G Tape&reel 2500 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-to-Source Voltage 500 V VGS Gate- to- Source Voltage ±30 V ID Continuous Drain Current TC=25℃ 5 AContinuous Drain Current TC=100℃ 3 IDM Pulsed Drain Current 20 PD Power Dissipation 52 W EAS Single Pulse Avalanche Engergy L = 10mH, RG = 25 Ω,TC=25℃ 200 mJ TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case 2.6 -- ℃/ W RθJA Thermal Resistance Junction-Ambient 62 -- ℃/ W VDSS RDS(ON)(Typ ) ID 500V 1.2Ω 5A
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 6 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage 500 -- -- V VGS=0V,ID=250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- 1 µA VDS=500V,VGS=0V Zero Gate Voltage Drain Current (100℃) -- -- 100 µA VDS=500V,VGS=0V IGSS Gate to Source Forward Leakage -- -- 100 nA VGS=30V ,VDS=0V Gate to Source Reverse Leakage -- -- -100 VGS=-30V ,VDS=0V VGS(TH) Gate Threshold Voltage 2 -- 4 V VGS=VDS,ID=250µA RDS(on) Static Drain- to- Source On- Resistance -- 1.2 1.5 Ω VGS=10V,ID=2.5A Dynamic Electrical Characteristics Ciss Input Capacitance -- 478 -- pF VGS=0V VDS=25V f=1MHz Coss Output Capacitance -- 55 -- Crss Reverse Transfer Capacitance -- 6.7 -- Rg Gate Resistance -- 1.5 -- Ω f=1MHz Qg Total Gate Charge -- 16 -- nC VDS=400V ID=5A VGS=10V Qgs Gate- to- Source Charge -- 3.5 -- Qgd Gate-to-Drain(" Miller") Charge -- 5.5 -- Switching Characteristics td(ON) Turn- on Delay Time -- 24 -- nS VDS=250V ID=5A VGS=10V trise Rise Time -- 18 -- td(OFF) Turn- OFF Delay Time -- 52 -- tfall Fall Time -- 31 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- -- 1.4 V IF=2.5A,VGS=0V trr Reverse Recovery Time -- 408 -- nS VGS=0V,IF=5A di/dt=100A/µsQrr Reverse Recovery Charge -- 1.5 -- uC Notes: * 1. Repetitive rating, pulse width limited by maximum junction temperature. * 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 6 Typical Characteristics
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 6
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 6 Test ircuits and Waveforms
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 6 Package outline drawing (TO-252 Unit: mm )