H5N5001FM RENESAS | Alldatasheet
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 10
Technical content
Features
- Low on-resistance : RDS(on) =1.1W typ.
- Low leakage current : IDSS =1mA max (at VDS = 500 V)
- High speed switching : tf = 15ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)
- Low gate charge : Qg = 15nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A)
- Avalanche ratings Outline 1 2 3 TO–220FM 1. Gate 2. Drain 3. Source D G S
Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V DSS 500 V Gate to source voltage V GSS –30 V Drain current I D 5A Drain peak current I D(pulse) Note1 20 A Body-drain diode reverse drain current IDR 5A Body-drain diode reverse drain peak current IDR(pulse) Note1 20 A Avalanche current I AP Note3 5A Channel dissipation Pch Note2 30 W Channel to case Thermal Impedanceqch-c 4.17 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW £ 10ms, duty cycle £ 1 % 2. Value at Tc = 25°C 3. Tch £150°C
Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 500 — — V I D = 10mA, VGS = 0 Gate to source leak current IGSS —— –0.1 mAV GS = –30V, VDS = 0 Zero gate voltege drain current IDSS ——1 mAV DS = 500 V, VGS = 0 Gate to source cutoff voltage VGS(off) 3.0 — 4.0 V I D = 1mA, VDS = 10V Static drain to source on state resistance R DS(on) — 1.1 1.5 W ID = 2.5A, VGS = 10VNote4 Forward transfer admittance |yfs| 3.0 4.5 — S I D = 2.5A, VDS = 10V Note4 Input capacitance Ciss — 580 — pF V DS = 25V Output capacitance Coss — 70 — pF V GS = 0 Reverse transfer capacitance Crss — 13 — pF f = 1MHz Turn-on delay time t d(on) — 20 — ns I D = 2.5A Rise time t r — 15 — ns V GS = 10V Turn-off delay time t d(off) — 65 — ns R L = 100W Fall time t f — 15 — ns R g = 10W Total gate charge Qg — 15 — nC V DD = 400V Gate to source charge Qgs — 3 — nC V GS = 10V Gate to drain charge Qgd — 8 — nC I D = 5A Body–drain diode forward voltage VDF — 0.85 1.3 V I F = 5A, VGS = 0 Body–drain diode reverse recovery time trr — 400 — ns I F = 5A, VGS = 0 diF/ dt =100A/ms Body–drain diode reverse recovery charge Q rr — 1.5 — mC Note: 4. Pulse test
0.3 0.1 131 0 30 100 300 1000 0 10 20 30 40 50 0 2468 1 0 0.03 0.01 100 Ta = 25 °C V = 4VGS 5 V 5.5 V Tc = 75°C 25°C –25°C 100 µs 1 msPW = 10 ms (1shot) DC Operation (Tc = 25°C) 10 µs 4.5 V 8 V 10 V 6 V Channel Dissipation Pch (W) Case Temperature Tc (°C) Power vs. Temperature Derating Pulse Test Drain to Source Voltage V (V)DS Drain Current I (A)D Typical Output Characteristics Gate to Source Voltage V (V)GS Drain Current I (A)D Typical Transfer Characteristics V = 10 V Pulse Test DS Drain to Source Voltage V (V)DS Drain Current I (A)D Maximum Safe Operation Area Operation in this area is limited by R DS(on)
0 24 6 81 0 0.1 0.5 21 00.2 1 5 0.5 0.2 0.1 –40 0 40 80 120 160 0.1 0.2 1 2 10 20 50 0.2 0.5 0.1 V = 10 V, 15 V GS 0.5 5 I = 5 AD 1 A V = 10 VGS I = 5 AD 2 A 1 A 2 A 5020 25 °C Tc = –25 °C 75 °C Gate to Source Voltage V (V)GS Drain to Source Saturation Voltage vs. Gate to Source Voltage V (V)DS(on) Drain to Source Saturation Voltage Pulse Test Case Temperature Tc (°C) R ( )DS(on) Static Drain to Source on State Resistance Ω Static Drain to Source on State Resistance vs. Temperature Pulse Test Drain Current I (A)D Forward Transfer Admittance |y | (S)fs Forward Transfer Admittance vs. Drain Current V = 10 V Pulse Test DS Drain Current I (A)D Drain to Source On State Resistance R ( )ΩDS(on) Static Drain to Source on State Resistance vs. Drain Current Pulse Test
0.1 0.3 1 3 10 30 100 1000 200 500 100 di / dt = 100 A / µs V = 0, Ta = 25 °CGS 0 50 100 150 200 250 2000 5000 1000 100 200 500 1000 800 600 400 200 10 20 30 40 50 1000 200 500 100 0.1 0.3 1 3 10 30 100 V = 0 f = 1 MHz GS Ciss Coss Crss V = 400 V 250 V 100 V DD I = 5 AD VDS VGS rt d(on)t d(off)t tf V = 10 V, V = 250 V PW = 10 µs, duty < 1 % R =10¶ GS DD G V = 100 V 250 V 400 V DD Reverse Drain Current I (A)DR Reverse Recovery Time trr (ns) Body–Drain Diode Reverse Recovery Time Capacitance C (pF) Drain to Source Voltage V (V)DS Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nC) Drain to Source Voltage V (V)DS Gate to Source Voltage V (V)GS Dynamic Input Characteristics Drain Current I (A)D Switching Time t (ns) Switching Characteristics
V = 0 VGS 5, 10 V -50 0 50 100 150 200 I = 10mAD 1mA 0.1mA V = 10 VDS Vin Monitor D.U.T. Vin 10 V R L V = 250 V DD trtd(on) Vin 90% 90% 10% 10%Vout td(off) Vout Monitor 10Ω 90% 10% tf Source to Drain Voltage V (V)SD Reverse Drain Current I (A)DR Reverse Drain Current vs. Source to Drain Voltage Pulse Test Case Temperature Tc (°C) Gate to Source Cutoff Voltage V (V)GS(off) Gate to Source Cutoff Voltage vs. Case Temperature WaveformSwitching Time Test Circuit
10 µ 100 µ 1 m 10 m 100 m 1 10 0.3 0.1 0.03 0.01 0.001 0.003 1shot pulse D = 1 0.5 0.2 0.1 0.05 0.02 0.01 Tc = 25°C DMP PW T D = PW T ch – c(t) = s (t) • ch – c ch – c = 4.17 °C/W, Tc = 25 °C θ γ θ θ Pulse Width PW (S) Normalized Transient Thermal Impedance s (t)γ Normalized Transient Thermal Impedance vs. Pulse Width
10.0 – 0.3 12.0 – 0.3 0.6 2.8 – 0.2 2.5 – 0.2 0.5 – 0.1 2.5 4.45 – 0.3 5.0 – 0.3 2.0 – 0.3 0.7 – 0.1 1.2 – 0.2 1.4 – 0.2 φ Hitachi Code JEDEC EIAJ Mass (reference value) TO-220FM Conforms 1.8 g As of January, 2001 Unit: mm
- Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Hitachi Asia Ltd. Hitachi Tower
16 Collyer Quay #20-00,
Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg URL NorthAmerica : http://semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia : http://sicapac.hitachi-asia.com Japan : http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong URL : http://www.hitachi.com.hk Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Europe GmbH Electronic Components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Fax: <49> (89) 9 29 30 00 Hitachi Semiconductor (America) Inc.
179 East Tasman Drive,
San Jose,CA 95134 For further information write to: Colophon 2.0