H5N3003 RENESAS | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 10
Technical content
Features
- Low on-resistance
- Low leakage current
- High Speed Switching Outline TO-3P 2 3 D S G 1. Gate 2. Drain (Flange) 3. Source
Rev.2.00, Aug.01.2003, page 2 of 9 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V DSS 300 V Gate to source voltage V GSS ±30 V Drain current I D 40 A Drain peak current I D (pulse) Note1 160 A Body-drain diode reverse drain current IDR 40 A Body-drain diode reverse drain peak current IDR (pulse) Note1 160 A Avalanche current I AP Note3 30 A Channel dissipation Pch Note2 150 W Channel to case Thermal Impedance θch-c 0.833 °C /W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. Tch ≤ 150°C
Rev.2.00, Aug.01.2003, page 3 of 9
Electrical Characteristics
(Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 300 — — V I D = 10mA, VGS = 0 Zero gate voltage drain current I DSS ——1 µAV DS = 300V, VGS = 0 Gate to source leak current I GSS ——± 0 . 1 µAV GS = ±30V, VDS = 0 Gate to source cutoff voltage V GS(off) 3.0 — 4.0 V V DS = 10V, ID = 1mA Forward transfer admittance |y fs| 2 03 5—S I D = 20A, VDS = 10VNote4 Static drain to source on state resistance RDS(on) — 0.058 0. 069 Ω ID = 20A, VGS= 10VNote4 Input capacitance Ciss — 5150 — pF V DS = 25V Output capacitance Coss — 560 — pF V GS = 0 Reverse transfer capacitance Crss — 90 — pF f = 1MHz Turn-on delay time td(on) — 60 — ns I D= 20A Rise time tr — 185 — ns R L = 7.5Ω Turn-off delay time td(off) — 220 — ns V GS = 10V Fall time tf — 150 — ns Rg=10 Ω Total gate charge Qg — 130 — nC V DD = 240V Gate to source charge Qgs — 25 — nC V GS = 10V Gate to drain charge Qgd — 60 — nC I D = 40A Body–drain diode forward voltage V DF —1 . 0 1 . 5 V I F = 40A, VGS = 0 Body–drain diode reverse recovery time trr — 280 — ns I F = 40A, VGS = 0 diF/dt=100A/µs Body–drain diode reverse recovery charge Qrr — 2.5 — µC Notes: 4. Pulse test
Rev.2.00, Aug.01.2003, page 4 of 9 Main Characteristics 200 150 100 0 50 100 150 200 300 100 131 0 30 100 300 1000 100 0 4 8 12 16 100 0 2468 0.3 0.1 1000 Ta = 25°C 10 V VGS = 5 V 5.5 V Tc = 75°C 25°C –25°C Channel Dissipation Pch (W) Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Drain Current ID (A) Maximum Safe Operation Area Drain to Source Voltage VDS (V) Drain Current ID (A) Typical Output Characteristics 100 µs1 msPW = 10 ms (1shot) DC Operation ( Tc = 25 °C) µs 6 V
7 V8 V
DS(on) Gate to Source Voltage VGS (V) Drain Current ID (A) Typical Transfer Characteristics VDS = 10 V Pulse Test Pulse Test
Rev.2.00, Aug.01.2003, page 5 of 9 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (V) 0 48 12 16 20 1 5 20 100 21 0 5 0 0.2 0.1 0.05 0.02 0.01 0.2 0.16 0.12 0.08 0.04 –40 0 40 80 120 160 0.2 0.5 2 5 20 50 100 100 0.5 0.2 1 10 25°C Tc = –25°C 75°C V = 10 VGS 10 A 20 A I = 40 AD I = 40 AD 20 A 10 A V = 10 V,15 VGS Pulse Test Drain to Source on State Resistance RDS(on) (Ω ) Static Drain to Source on State Resistance vs. Drain Current Drain Current ID (A) Pulse Test Case Temperature Tc (°C) Static Drain to Source on State Resistance RDS(on) (Ω ) Static Drain to Source on State Resistance vs. Temperature Pulse Test Drain Current ID (A) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) DSV = 10 V Pulse Test
Rev.2.00, Aug.01.2003, page 6 of 9 Switching Time t (ns) Drain Current ID (A) Switching Characteristics Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) Drain to Source Voltage VDS (V) 0.1 0.3 1 3 10 30 100 1000 200 500 100 0 20 40 60 80 100 20000 50000 10000 1000 2000 5000 500 400 300 200 100 40 80 120 160 200 10000 1000 100 0.1 0.3 1 3 10 30 100 200 500 100 V = 50 V 100 V 240 V DS V = 0 f = 1 MHz GS Ciss Coss Crss I = 40 AD VDD VGS Body-Drain Diode Reverse Recovery Time di / dt = 100 A / µs V = 0, Ta = 25°CGS V = 240 V 100 V 50 V DS rt d(on)t d(off)t t f V = 10 V, V = 150 V PW = 10 µs, duty < 1 % R =10 Ω GS DD G rt Reverse Drain Current IDR (A) Reverse Recovery Time trr (ns) Gate Charge Qg (nC) Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Dynamic Input Characteristics t f
Rev.2.00, Aug.01.2003, page 7 of 9 100 -50 0 50 100 150 200 Case Temperature Tc (°C) Gate to Source Cutoff Voltage vs. Case Temperature Gate to Source Cutoff Voltage V (V)GS(off) V = 10 VDS Vin Monitor D.U.T. Vin 10 V R L V = 150 V DD trtd(on) Vin 90% 90% 10% 10%Vout td(off) Vout Monitor 10Ω 90% 10% tf Source to Drain Voltage VSD (V) Reverse Drain Current IDR (A) Reverse Drain Current vs. Source to Drain Voltage Pulse Test Switching Time Test Circuit Waveform V = 0 VGS 10 V 5 V I = 10mAD 1mA 0.1mA
Rev.2.00, Aug.01.2003, page 8 of 9 0.3 0.1 0.03 0.01 10 µ 100 µ 1 m 10 m 100 m 1 10 DMP PW T D = PW T ch – c(t) = s (t) ch – c ch – c = 0.833°C/W, Tc = 25°C θ γ θ θ Tc = 25°C D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse Pulse Width PW (s) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width
Rev.2.00, Aug.01.2003, page 9 of 9 Package Dimensions φ3.2 ± 0.2 4.8 ± 0.2 1.5 0.3 2.8 0.6 ± 0.21.0 ± 0.2 15.6 ± 0.3 0.5 1.0 5.0 ± 0.3 1.6 1.4 Max 2.0 2.0 14.9 ± 0.2 3.6 0.9 1.0 Package Code JEDEC JEITA Mass (reference value) TO-3P Conforms 5.0 g As of January, 2003 Unit: mm
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