H55N25HW HUIXIN | Alldatasheet

Document overview

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Technical content

Features

  • Low R & FOM( )DS on
  • Extremely low switching loss
  • Enhanced Body diode dv/dt capability
  • Enhanced Avalanche Ruggedness Product Name Package Marking TO-24H55N25HW 7 Absolute Maximun Ratings °C( )T =25 unless otherwise specifiedJ Marking Information Parameter V A Unit VDS VGS ID PD T ,TJ STG Symbols Drain-Source Voltage Gate-Source Voltage (1)Continuous Drain Current , T =25°CC ( )3Power dissipation , T =25°CC Operating Junction and Storage Temperature 250 ±20 220 300 -55 ~ +175 Value V w A V = 250 VDS ( )R =50mΩ Typ(on)DS ( )I = 55A D T =25°CJ Q = 20nCg Applications:
  • Synchronous Rectification in SMPS
  • Hard Switching and High Speed Circuit
  • Power Tools
  • Motor Control
  • UPS www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 5 Package & Pin information D-Pin2 G-Pin1 S-Pin3 Packing Qty. ( )2Pulsed drain current , T =25 °CC A(1)Continuous diode forward current , T =25°CC ID,pulse EAS ( )4Single pulsed avalanche energy 112 mJ Thermal Characteristics Parameter UnitSymbols Thermal Resistance from Junction to Case Value 0.42 °C/W RθJC RθJA Thermal Resistance from Junction to Ambient IS A( )2Diode pulsed current , T =25 °CCIS,pulse TO-247 220 G D S (1)Continuous Drain Current , T =100°CC 35 Tube 30 PCSH55N25HW

www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 5 ( )Electrical Characteristics T =25 unless otherwise specifiedJ °C Parameter V Unit V( )BR DSS V ( )GS th IDSS Ciss Symbols Drain-Source Breakdown Voltage Gate Threshold Voltage 250 Typ. Test Conditions V =0, I =250μAGS D td(on) tf Max.Min. V 2.0 4.0 V =V , I =250μAGS DS D Zero Gate Voltage Drain Current Gate-Source Leakage Current V =0, V =±20VDS GSnA±100 7.6 Input Capacitance Output Capacitance Reverse Transfer Capacitance 1584 104 pF V =0GS V =100VDS f=1MHz Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time ns V =125VDS 10VV =GS I =10AD 10ΩR =G(ext) Total Gate Charge Gate to Source Charge Gate to Drain (Miller) Charge nC V =125VDS 10VV =GS I =10AD μA V =250V, V =0,T =25°CDS GS J1 Body Diode Characteristics Parameter Unit VSD Symbols Diode Forward Voltage Typ. Test Conditions V =0, I =10AGS S Max. V =125V R I =10ΑS di/dt=100A/μs ns nC 110 Qrr Reverse Recover Time Reverse Recovery Charge 440 Min. V R ( )DS on Drain-Source On-State Resistance 50 64 mΩ V =10V, I =10A,T =25°CGS D J IGSS Gate resistanceRG 4.4 f =1 MHz, Open drainΩ Coss Crss Qg Qgs Qgd tr td(off) 1.2 AIrrm Peak reverse recovery current 23 trr Note ( )1 Calculated continuous current based on maximum allowable junction temperature. ( )2 Repetitive rating; pulse width limited by max. junction temperature. ( )3 Pd is based on max. junction temperature, using junction-case thermal resistance. ( )4 L=1 mH, starting T =25 °CJ 3.0 μA V =250V, V =0,T =100°CDS GS J100 0.9

www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 5 Electrical Characteristics Diagrams Fig.2 Typcal transfer characteristics ( )Gate-Source Voltage-V VGS ( )Drain-Source Current-I AD V =5VDS 3.5 4.0 3.0 4.5 5.0 5.5 2.5 T =25°CJT =125°CJ Fig.4 Typical Gate-Charge ( )Gate-Charge-Q nCg V =125VDS I =10AD ( )Gate-Source Voltage-V VGS 8 12 16 20 24 Fig.5 Normalized On-Resistance vs. TJ Normalized On-Resistance ( )Junction Temperature-T °CJ 75 125 200150100250 I =10AD 1.0 1.5 2.0 2.5 3.0 0.5 50 175 =6VVGS =10VVGS Fig.6 Drain-source on-state resistance ( )Drain current-I AD 201550 On Resistance -R (mΩ)DS(on) =10VVGS =6VVGS ( )Capacitance pF Fig.3 Typical Capacitance vs. D-S Voltage ( )Drain-Source Voltage-V VDS 20 100 010 210 410 0 20 20 20 Coss Ciss Crss V =0GS f =1MHz Fig.1 Typ. output characteristics ( )Drain-Source Voltage-V VDS 0 4 6 8 10 T =25°CJ ( )Drain-Source Current-I AD V =8VGS V =10VGS V =4.5VGS 100 V =5.0VGS V =6VGS

www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 5 Electrical Characteristics Diagrams Source-drain voltage -V (V)SD 0.25 0.50 0.75 1.00 -110 010 110 210 Source current- I (A)S Fig.8 Forward characteristic of body diode T =25°CJT =125°CJ Fig.9 Drain Current vs. Case Temperature 75 125 175 ( )Case Temperature-T °CC 15010050250 ( )Drain-Source Continupus Current-I AD Fig.10 Safe Operating Area ( )Drain-Source Voltage-V VDS ( )Drain-Source Current-I AD 1E3 1E2 1E1 1E0 1E-1 10 100 1000 T =25°CC T =175°CJmax 0.1ms 1ms DC R LimitedDS(on) 10ms ( )Pulse Width-t sec Fig.11 Typical Characteristics 1E-5 1E-4 1E-3 1E-2 1E-1 1E-3 1E-2 ( )Thermal Resistance -Z °C/WthJC 1E0 1E-1 PDM Notes: 1. Duty Factor D=t /t1 2 2. Peak T =P Z TJ DM thJC C× + 1E-6 Duty=1 Single 0.2 0.1 0.05 0.02 0.5 0.01 Fig.7 On-Resistance vs. Gate-Source Voltage On Resistance -R (mΩ)DS(on) 54 6 7 8 10 100 I =10AD ( )Gate-Source Voltage-V VGS 120 T =25°CJ T =125°CJ

www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 5 TO-247 Package Dimension UNIT: mm Symbol A 5.204.80 b c D d e E L S ΦP MIN NOM MAX 5.00 2.592.21 2.40 1.351.05 1.20 2.211.91 2.01 0.750.50 0.60 21.320.7 21.0 17.015.7 16.3 1.380.95 1.16

5.44 BCS

16.215.5 15.9 E1 14.513.5 14.0 20.2219.82 19.92 4.564.00 4.28 3.803.40 3.60 6.305.80 6.10 p 7.606.60 7.10 b2 3.202.90 3.00 BACK VIEW S ΦP HEAT-SINK PLANE d p E DL M b1×2 b×3 e×2 A A c B