H50N20HD HUIXIN | Alldatasheet

Document overview

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Technical content

Features

  • Low R & FOM( )DS on
  • Extremely low switching loss
  • Excellent reliability and uniformity
  • Fast switching and soft recovery Product Name Package Marking H50N20HD TO-252 Absolute Maximun Ratings °C( )T =25 unless otherwise specifiedJ Marking Information Parameter V A Unit VDS VGS ID PD T ,TJ STG Symbols Drain-Source Voltage Gate-Source Voltage (1)Continuous Drain Current , T =25°CC (3)Power dissipation , T =25°CC Operating Junction and Storage Temperature 200 ±20 200 186 -55 ~ +175 Value V w A Packing Qty. (2)Pulsed drain current , T =25 °CC

50 A(1)Continuous diode forward current , T =25°CC

ID,pulse EAS (5)Single pulsed avalanche energy 120 mJ Thermal Characteristics Parameter UnitSymbols Thermal Resistance from Junction to Case Typ. 0.8 °C/W RθJC RθJA (4)Thermal Resistance from Junction to Ambient IS

200 A(2)Diode pulsed current , T =25°CCIS,pulse

Min. Max. N-Channel 200V50A MOSFET www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 1 of 5 Applications:

  • PD charger
  • Motor driver
  • Switching voltage regulator
  • DC-DC convertor
  • Switching mode power supply V = 200 VDS R = 28 mΩ (Typ)(on)DS ( )I = 50A T =25°CD C TO-252 D G S D G S H50N20HD Tape&reel 2500 PCS

( )Electrical Characteristics T =25 unless otherwise specifiedJ °C Parameter V Unit V(BR)DSS VGS(th) IDSS Ciss Symbols Drain-Source Breakdown Voltage Gate Threshold Voltage 200 Typ. Test Conditions V =0, I =250μAGS D td(on) tf Max.Min. V 3.0 4.5 V =V , I =250μAGS DS D Zero Gate Voltage Drain Current Gate-Source Leakage Current V =0, V =±20VDS GSnA±100 Input Capacitance Output Capacitance Reverse Transfer Capacitance pF V =0GS V =100VDS f=100kHz Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time ns V =100VDS V =10VGS I =20AD R =2Ω( )G ext Total Gate Charge Gate to Source Charge ( ) Gate to Drain Miller Charge nC V =100VDS V =10VGS I =20AD μA V =100V, V =0,T =25°CDS GS J1.0 Body Diode Characteristics Parameter Unit VSD Symbols Diode Forward Voltage Typ. Test Conditions V =0, I =20AGS S Max. V =100V R I =20ΑS di/dt=100A/μs ns nCQrr Reverse Recover Time Reverse Recovery Charge Min. V RDS(on) Drain-Source On-State Resistance 28 32 mΩ V =10V, I =25AGS D IGSS Gate resistanceRG f =1 MHz, Open drainΩ Coss Crss Gate plateau voltageVplateau V Qg Qgs Qgd tr td(off) 1.2 AIrrm Peak reverse recovery current trr Note ( )1 Calculated continuous current based on maximum allowable junction temperature. ( )2 Repetitive rating; pulse width limited by max. junction temperature. ( ) 3 Pd is based on max. junction temperature, using junction-case thermal resistance. 2( )4 The value of R is measured with the device mounted on 1 in FR-4 board with 2oz. Copper,θJA in a still air environment with T =25 °C.A ( )5 V =50V, V =10 V, L=0.3 mH, starting T =25 °CDD GS J www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 2 of 5 3.8 7.8 2038 218 9.3 7.5 5.7 2.0 102 385 5.7

Electrical Characteristics Diagrams www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 3 of 5 Fig.3 Typical Gate-Charge ( )Gate-Charge-Q nCg ( )Gate-Source Voltage-V VGS V =100VDS I =20AD 5 15 25 35 Fig.1 output characteristicsTypical ( )Drain-Source Voltage-V VDS 0 2 ( )Drain-Source Current-I AD 100 4 6 8 10 T =25°CJ μstp=﹤200 V =9VGS V =5VGS V =8VGS V =6VGS V =7VGS ( )Drain-Source Voltage-V VDS 50 100 150 200 Capacitance (pF) Fig.2 Typical Capacitance vs. D-S Voltage 110 210 310 410 010 V =0GS f =100kHz Crss Coss Ciss Fig.4 Drain-source on-state resistance On Resistance -R (mΩ)DS(on) -25 75 125 ( )Junction Temperature-T °CJ 17510050250-50 150 V =10VGS I =25AD Fig.5 Drain-source on-state resistance ( )Drain current-I AD ( )On Resistance -R mΩDS(on) 10025 V =7VGS V =8VGS V =6VGSV =5VGS V =10VGS 50 75 V =10VGS Fig.6 Threshold voltage vs. Temperature ( )Threshold voltage-V VGS(th) -25 75 125 ( )Junction Temperature-T °CJ 17510050250-50 150 2.0 2.5 3.0 3.5 4.0 V =VGS DS I =250μAD 4.5 5.0 5.5

www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 4 of 5 ( )Source-drain voltage -V VSD 0.5 1.0 1.5 2.0 310 ( )Source current- I AS Fig.7 Forward characteristic of body diode T =25°CJ -25 Fig.8 Drain Current vs. Case Temperature 75 125 175 ( )Case Temperature-T °CC 15010050250 Drain-Source Continupus Current-I (A)D 100 T ﹤175°CJ Fig.9 Safe Operating Area ( )Drain-Source Voltage-V VDS ( )Drain-Source Current-I AD 1E3 1E2 1E1 1E-1 0.1 10 1000100 1E0 0.01ms DC 0.1ms 10ms 1ms T =25°CC T =175°CJmax R LimitedDS(on) ( )Drain-Source Voltage-V VDS 1E-1 1E0 1E-2 1E-3 Fig10. Typical Characteristics ( )Thermal Resistance -Z °C/WthJC 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 Single 0.2 0.1 0.05 0.02 Duty=1 0.5 0.01 Electrical Characteristics Diagrams

www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 5 of 5

Package Information

UNIT: mm BACK VIEW L A c E D H e L2L1 HEAT-SINK PLANE 2×b Symbol A 2.402.18 b c D e H E L Min Nom Max 2.28 0.200 0.890.63 0.76 4.924.32 4.83 0.610.40 0.50 6.235.96 6.10 6.35 6.60

4.57 BSC

10.59.40 10.0 2.041.27 1.52 5.385.21 5.25 A2 1.170.88 1.02 b2 5.504.95 5.34 0.630.45 0.50 6.80 3.002.86 2.92 1.270.88 1.02