H50N10D HUIXIN | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 5
Technical content
Features
Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available TO-252 (D-PAK) Maximum Ratings Characteristics( TA = 25 oC unless otherwise specified ) Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID
5 Drain Current – Continuous (TC=25℃) 50 A
Drain Current – Continuous (TC=100℃) 41 A IDM Drain Current – Pulsed1 220 A EAS Single Pulse Avalanche Energy2 100 mJ IAS Single Pulse Avalanche Current2 20.1 A PD Power Dissipation (TC=25℃) 114 W Power Dissipation – Derate above 25℃ 0.9 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62 ℃/W RθJC Thermal Resistance Junction to Case --- 1.1 ℃/W +86-769-22857832 huixin@hxkj.hk Rev.01 Page1of5
Electrical Characteristics ( TJ = 25 oC unless otherwise specified ) Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 100 --- --- V IDSS Drain-Source Leakage Current VDS=100V, VGS=0V, TJ=25℃ --- --- 1 uA VDS=80V, VGS=0V, TJ=125℃ --- --- 100 uA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A --- VGS(th) Gate Threshold Voltage VGS=VDS, ID=250uA 1.0 1.7 2.5 V gfs Forward Transconductance VDS=5V, ID=10A --- 30 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=50V, VGS=10V, ID=5A --- 19 --- nC Qgs Gate-Source Charge3 , 4 --- 2.9 --- Qgd Gate-Drain Charge3 , 4 --- 4.5 --- Td(on) Turn-On Delay Time3 , 4 VDD=50V, VGS=10V, RG=6.2 ID=1A --- 5 --- ns Tr Turn-On Rise Time3 , 4 --- 19 --- Td(off) Turn-Off Delay Time3 , 4 --- 26 --- Tf Turn-Off Fall Time3 , 4 --- 52 --- Ciss Input Capacitance VDS=50V, VGS=0V, f=1MHz --- 996 --- pF Coss Output Capacitance --- 197 --- Crss Reverse Transfer Capacitance --- 23 --- Rg Gate resistance VGS=0V, VDS=0V, f=1MHz --- 0.5 --- Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage VGS=0V, IS=20A --- --- 1.2 V trr Reverse Recovery Time IS=1A, di/dt=100A/us --- 38 --- ns Qrr Reverse Recovery Charge --- 29 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=50V, VGS=10V, L=0.5mH, RG=25Ω, Starting TJ=25℃ 3. The data tested by pulsed, pulse width ≦300us, duty cycle ≦2%. 4. Essentially independent of operating temperature. 5. Silicon limited. +86-769-22857832 huixin@hxkj.hk Rev.01 Page2of5 11 13 m
Package Outline Dimensions millimeters TO-252(DPAK) +86-769-22857832 huixin@hxkj.hk Rev.01 Page5of5