H40T65DC HUIXIN | Alldatasheet

Document overview

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  • PDF pages: 8

Technical content

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 8 H40T65DC Trench Gate IGBT Features:

  • 650V trench gate/field termination process
  • Very low Vce(sat)
  • Low switching loss
  • Positive temperature coefficient in Vce(sat)
  • Lead Free Applications:
  • EV Charging
  • Uninterruptible Power Supply (UPS)
  • Inverters
  • Load Switch

Ordering Information

Part Number Package Marking Packing Qty. H40T65DC TO-263 H40T65DC Tape&reel 800 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VCES Collector-Emitter Voltage 650 V VGES Gate- Emitter Voltage ±30 V IC Continuous DC collector current TC = 25 °C 80 AContinuous DC collector current TC = 100 °C 40 ICm Pulsed collector current TC = 25°C 160 A IF Diode Continuous Forward Current TC = 25 °C 40 ADiode Continuous Forward Current TC = 100 °C 20 IFm Diode Maximum Forward Current TC = 25°C 80 A PD Total Power Dissipation @ TC = 25°C 280 W Tstg Operating Junction and Storage Temperature Range -55 to175 °C TL Maximum Temperature for Soldering 260 °C VCES Vce(sat ) IF 650V 1.55V 40A

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 8 Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case for IGBT 0.5 -- ℃/ W RθJC Thermal Resistance Junction-Case for Diode 0.7 -- ℃/ W RθJA Thermal Resistance Junction-Ambient 40 -- ℃/ W Electrical Characteristics of the IGBT ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions Static Characteristics V(BR)CES Collector-Emitter Breakdown Voltage 650 - -- V VGE=0V,ICE=250uA ICES Collector-Emitter Leakage Current - - 35 µA VGE =0V, VCE=650V IGES(F) Gate to Emitter Leakage current - - 200 nA VGE=+30V, VCE=0V IGES(R) Gate to Emitter Leakage current - - -200 nA VGE=-30V, VCE=0V VCE(sat) Collector-Emitter Saturation Voltage - 1.55 1.95 V IC=40A,VGE=15V VGE(th) Gate Threshold Voltage 4.7 5.5 6.2 V IC=1mA,VCE=VGE Dynamic Characteristics Cies Input Capacitance - 2237 -- PF VCE=25V, VGE=0V, f=1MHz Coes Output Capacitance - 116 -- Cres Reverse Transfer Capacitance - 28 --

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 8 Symbol Parameter Min. Typ. Max. Units Test Conditions Switching Characteristics td(ON) Turn-on Delay Time - 19 -- ns VCE=400V, IC=40A, VGE=15V, Rg=5Ω, Tj=25°C Inductive Load tr Rise Time - 35 -- td(OFF) Turn-Off Delay Time - 90 -- tf Fall Time - 26 -- Eon Turn-On Switching Loss - 0.6 -- mJEoff Turn-Off Switching Loss - 0.38 -- Ets Total- Switching Loss - 0.98 -- Qg Total Gate Charge - 110 -- uC IC = 40 A, VGE = 15 V, VCE =520 V Qge Gate- to- Emitter Charge - 52 -- Qgc Gate-to-Collector Charge - 23 -- Electrical Characteristics of the DIODE ( TJ= 25℃unless otherwise specified) VF Diode Forward Voltage - 2.2 2.9 V IF=40A Trr Reverse Recovery time - 45 - nS IF=40A di/dt=200A/µs Tj=25°C Irrm Reverse Recovery Current - 3.5 - A Qrr Reverse Recovery Charge - 97 - nC Trr Reverse Recovery time - 151 - nS IF=40A di/dt=200A/µs Tj=175°C Irrm Reverse Recovery Current - 4.6 - A Qrr Reverse Recovery Charge - 163 - nC

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 8 Typical Characteristics

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 8

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 8

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 7 of 8

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 8 of 8 Package outline drawing (TO-263 Unit: mm )