H40T60

IHW40N60T_08 INFINEON | Alldatasheet

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Power Semiconductors 1 Rev. 2.3 Sep. 08 Low Loss DuoPack : IGBT in TrenchStop® -technology with anti-parallel diode Features:

• Very low V CE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5 µs
• TrenchStop ® and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CE(sat)
• Positive temperature coefficient in V CE(sat)
• Low EMI
• Low Gate Charge
• Qualified according to JEDEC 1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications:
• Inductive Cooking
• Soft Switching Applications Type VCE I C VCE(sat),Tj=25°C Tj,max Marking Package IHW40N60T 600V 40A 1.55V 175°C H40T60 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpuls 120 Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 120 Diode forward current, limited by Tjmax TC = 25°C TC = 100°C IF Diode pulsed current, tp limited by Tjmax IFpuls 60 A Gate-emitter voltage Transient Gate-emitter voltage (t p < 5 ms) VGE ±20 ±25 V Short circuit withstand time2) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C tSC 5 µs Power dissipation TC = 25°C Ptot 303 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

1 J-STD-020 and JESD-022

2) Allowed number of short circuits: <1000; time between short circuits: >1s. G C E PG-TO-247-3

Power Semiconductors 2 Rev. 2.3 Sep. 08 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 0.49 Diode thermal resistance, junction – case RthJCD 0.76 Thermal resistance, junction – ambient RthJA 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =0.5mA 600 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =40A Tj =25 °C Tj =175 °C 1.55 1.9 2.05 Diode forward voltage V F VGE =0V, IF =20A Tj =25 °C Tj =175 °C 1.1 1.05 Gate-emitter threshold voltage VGE(th) IC =0.8mA, VCE =VGE 4.1 4.9 5.7 V Zero gate voltage collector current ICES VCE =600V , VGE =0V Tj =25 °C Tj =175 °C 1000 µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =40A - 22 - S Integrated gate resistor RGint - Ω Dynamic Characteristic Input capacitance Ciss - 2423 - Output capacitance Coss - 113 - Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz - 72 - pF Gate charge QGate VCC =480V, IC =40A VGE =15V - 215 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13 - nH

Power Semiconductors 3 Rev. 2.3 Sep. 08 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. Typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - - - Rise time tr - - - Turn-off delay time td(off) - 186 - Fall time tf - 66.3 - ns Turn-on energy Eon - - - Turn-off energy Eoff - 0.92 - Total switching energy Ets Tj =25 °C, VCC =400V, IC =40A, VGE =0/15V, RG =5.6 Ω , Lσ 1) =40nH, Cσ 1) =30pF Energy losses include “tail” and diode reverse recovery. - 0.92 - mJ Switching Characteristic, Inductive Load, at Tj=175 °C Value Parameter Symbol Conditions min. Typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - - - Rise time tr - - - Turn-off delay time td(off) - 196 - Fall time tf - 76.5 - ns Turn-on energy Eon - - - Turn-off energy Eoff - 1.4 - Total switching energy Ets Tj =175 °C, VCC =400V, IC =40A, VGE =0/15V, RG = 5.6 Ω Lσ 1) =40nH, Cσ 1) =30pF Energy losses include “tail” and diode reverse recovery. - 1.4 - mJ 1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

Power Semiconductors 10 Rev. 2.3 Sep. 08 5.44 0.55 6.04 5.49 1.68 3.68 4.17 20.82 16.25 15.70 1.05 3.50 19.80 13.10 MIN 1.90 4.90 2.27 1.07 1.85 1.90 0.238 0.216 0.066 0.145 0.164 0.075 0.820 0.640 0.618 0.022 0.193 0.089 0.042 0.073 0.041 0.075 0.138 0.780 0.516 0.68 6.30 6.00 17.65 2.60 5.10 14.15 3.70 21.10 16.03 20.31 1.35 4.47 2.41 5.16 2.53 1.33 2.11 MAX 2.16 0.027 0.214 0.248 0.236 0.695 0.557 0.102 0.201 0.831 0.631 0.053 0.146 0.799 0.176 MIN MAX 0.095 0.203 0.099 0.052 0.083 0.085 7.5mm 5 5 17-12-2007 Z8B00003327 2.87 2.87 0.113 0.113 3.38 3.13 0.133 0.123 M M PG-TO247-3

Power Semiconductors 11 Rev. 2.3 Sep. 08 Figure A. Definition of switching times Figure B. Definition of switching losses I rrm 90% I rrm 10% I rrm di /dt F t rr I F i,v tQ S Q F t S t F V R di /dt rr Q= Q Q rr S F t= t trr S F + Figure C. Definition of diodes switching characteristics p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit

Power Semiconductors 12 Rev. 2.3 Sep. 08 Published by Infineon Technologies AG

81726 Munich, Germany

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