H40T120LW-A HUIXIN | Alldatasheet

Document overview

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Technical content

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 6 H40T120LW-A Trench Gate IGBT Features:

  • 1200V trench gate/field termination process
  • Very low Vce(sat)
  • Low switching loss
  • Positive temperature coefficient in Vce(sat)
  • Lead Free
  • AEC-Q101qualified Applications:
  • EV Charging
  • Uninterruptible Power Supply (UPS)
  • Inverters
  • Load Switch

Ordering Information

Part Number Package Marking Packing Qty. H40T120LW-A TO-247 H40T120LW-A Tube 30 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VCES Collector-Emitter Voltage 1200 V VGES Gate- Emitter Voltage ±20 V IC Continuous DC collector current TC = 25 °C 80 AContinuous DC collector current TC = 100 °C 40 ICm Pulsed collector current TC = 25°C 160 A IF Diode Continuous Forward Current TC = 25 °C 80 ADiode Continuous Forward Current TC = 100 °C 40 IFm Diode Maximum Forward Current TC = 25°C 160 A PD Total Power Dissipation @ TC = 25°C 426 W Tstg Operating Junction and Storage Temperature Range -40 to175 °C TL Maximum Temperature for Soldering 260 °C VCES Vce(sat ) IF 1200V 1.85V 40A

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 6 Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case for IGBT -- 0.35 ℃/ W RθJC Thermal Resistance Junction-Case for Diode -- 0.65 ℃/ W RθJA Thermal Resistance Junction-Ambient -- 40 ℃/ W Electrical Characteristics of the IGBT ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions Static Characteristics V(BR)CES Collector-Emitter Breakdown Voltage 1200 - -- V VGE=0V,ICE=250uA ICES Collector-Emitter Leakage Current - - 200 uA VGE =0V, VCE=1200V IGES(F) Gate to Emitter Leakage current - - 200 nA VGE=+20V, VCE=0V IGES(R) Gate to Emitter Leakage current - - -200 nA VGE=-20V, VCE=0V VCE(sat) Collector-Emitter Saturation Voltage - 1.85 2.4 V IC=40A,VGE=15V VGE(th) Gate Threshold Voltage 4.9 5.5 6.5 V IC=1.4mA,VCE=VGE Dynamic Characteristics Cies Input Capacitance - 2500 -- PF VCE=25V, VGE=0V, f=1MHz Coes Output Capacitance - 170 -- Cres Reverse Transfer Capacitance - 90 --

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 6 Symbol Parameter Min. Typ. Max. Units Test Conditions Switching Characteristics td(ON) Turn-on Delay Time - 45 -- ns VCC=600V, IC=40A, VGE=15V, Rg=5Ω, Tj=25°C Inductive Load tr Rise Time - 56 -- td(OFF) Turn-Off Delay Time - 180 -- tf Fall Time - 80 -- Eon Turn-On Switching Loss - 3.8 -- Eoff Turn-Off Switching Loss - 1.7 -- mJ Ets Total-Switching Loss - 5.5 -- Qg Total Gate Charge - 330 -- nC IC = 40 A, VGE = 15 V, VCE =960 V Qge Gate- to- Emitter Charge - 25 QgC Gate-to-Collector Charge - 180 -- Electrical Characteristics of the DIODE ( TJ= 25℃unless otherwise specified) VF Diode Forward Voltage - 2.0 2.6 V IF=40A Trr Reverse Recovery time - 435 - nS IF=40A di/dt=520A/µs Tj=25°C Irrm Reverse Recovery Current - 14 - A Qrr Reverse Recovery Charge - 2500 - nC Trr Reverse Recovery time - 770 - nS IF=40A di/dt=520A/µs Tj=150°C Irrm Reverse Recovery Current - 20 - A Qrr Reverse Recovery Charge - 2240 - nC

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 6 Typical Characteristics Fig. 1 - Typical Output Characteristic(TJ=25°C) Fig. 2 - Typical Output Characteristic (TJ=150°C) Fig. 3 - Typical Transfer Characteristic Fig. 4 - Diode Forward Current as a function of Forward Voltage Fig. 5 - IGBT Transient Thermal Impedance Fig. 6 - Diode Transient Thermal Impedance 0 1 4 5 TVj=25°C VGE=19V,17V,15V VGE=13V VGE=11V VGE=9V Collector Current (A) 2 3 Collector to Emitter Voltage (V) 0 1 4 5 TVj=150°C VGE=19V,17V,15V VGE=13V VGE=11V VGE=9V Collector Current (A) 2 3 Collector to Emitter Voltage (V) 0 2 4 6 8 10 12 14 VCE= 20V Pulesd TVj=150°C Collector Current (A) Gate to Emitter Voltage (V) TVj=25°C Forward Voltage (V) Forward Current (A) TVj=150°C TVj=25°C 1E-6 1E-5 1E-4 0.1 1 10 1E-4 1E-3 0.01 0.1 Zthjc(℃/W) 1E-3 0.01 Pulse Width (s) 1E-6 1E-5 1E-4 0.1 1 10 1E-4 1E-3 0.01 0.1 Zthjc(℃/W) 1E-3 0.01 Pulse Width (s)

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 6 Fig. 7 - IGBT Switching Loss vs IC Fig. 8- IGBT Switching Loss vs RG Fig. 9 - Diode Switching Loss (Erec) vs IF Fig. 10- Diode Switching Loss (Erec) vs RG Fig. 11 - Power Dissipation as a function of Case Temperature 0 20 60 80 Eoff VCC=600V RG=12Ω VGE=±15V TVj=150℃ Eon Switching Loss (mJ) Collector Current (A) 0 15 30 45 60 75 90 105 120 Eoff VCC=600V IC=40A VGE=±15V TVj=150℃ Eon Switching Loss (mJ) Gate Resistance (Ω) 0 20 60 80 VCC=600V RG=12Ω VGE=±15V TVj=150℃ Switching Loss (mJ) Forward Current (A) 0 30 90 120 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VCC=600V IF=40A VGE=±15V TVj=150℃ Switching Loss (mJ) Gate Resistance (Ω) 25 50 75 100 125 150 175 100 150 200 250 300 350 400 450 PD (W) TC (°C) 1 10 1000 0.1 100 1000 DC Single Pulse VGE=15V Tc= 25℃ Tj≤ 175℃ 10μs 100μs 500μs DC 1ms Collector Current (A) 100 Collector-Emitter Voltage (V) Fig. 12 -FBSOA

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 6 Package outline drawing （TO-247 Unit: mm ) Symbol unit(mm) MIN MAX A 15.7 16.13 B 20.80 21.10 C 4.83 5.21 D 1.50 2.49 E 1.10 1.33 F 0.50 0.70 G1 2.87 3.22 G2 1.91 2.39 H 4.00 4.40 I 2.29 2.55 K 5.39 6.20 L 19.80 20.32 M 4.23 5.49 N 5.28 5.59 3.40 3.65