H40N25F HUIXIN | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 7

Technical content

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 7 H40N25F 250V N-Channel MOSFET Features:

  • Fast switching speed
  • 100% avalanche tested
  • Improved dv/dt capability
  • Enhanced Avalanche Ruggedness
  • Lead Free Applications:
  • Synchronous Rectification in SMPS
  • Hard Switching and High Speed Circuit
  • Power Managment
  • Load Switch

Ordering Information

Part Number Package Marking Packing Qty. H40N25F TO-220F H40N25F Tube 50 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-to-Source Voltage 250 V VGS Gate- to- Source Voltage ±30 V ID Continuous Drain Current TC=25℃ 44 AContinuous Drain Current TC=100℃ 30 IDM Pulsed Drain Current 176 PD Power Dissipation 50 W EAS Single Pulse Avalanche Engergy L = 10mH, RG = 25 Ω,TC=25℃ 880 mJ TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case -- 3 ℃/ W RθJA Thermal Resistance Junction-Ambient -- 62.5 ℃/ W VDSS RDS(ON)(Typ ) ID 250V 56mΩ 44A

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 7 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage 250 -- -- V VGS=0V,ID=250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- 1 µA VDS=250V,VGS=0V IGSS Gate to Source Forward Leakage -- -- 100 nA VGS=30V ,VDS=0V Gate to Source Reverse Leakage -- -- -100 VGS=-30V ,VDS=0V VGS(TH) Gate Threshold Voltage 3 4 5 V VGS=VDS,ID=250µA RDS(on) Static Drain- to- Source On- Resistance -- 56 69 mΩ VGS=10V,ID=27.5A Dynamic Electrical Characteristics Ciss Input Capacitance -- 3350 -- pF VGS=0V VDS=25V f=1MHz Coss Output Capacitance -- 463 -- Crss Reverse Transfer Capacitance -- 33 -- Rg Gate Resistance -- 2.7 -- Ω f=1MHz Qg Total Gate Charge -- 63.5 -- nC VDS=200V ID=27.5A VGS=10V Qgs Gate- to- Source Charge -- 21.5 -- Qgd Gate-to-Drain(" Miller") Charge -- 25.5 -- Switching Characteristics td(ON) Turn- on Delay Time -- 50 -- nS VDS=100V ID=27.5A RG=20Ω VGS=10V trise Rise Time -- 178 -- td(OFF) Turn- OFF Delay Time -- 83 -- tfall Fall Time -- 89 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- -- 1.4 V IF=27.5A,VGS=0V trr Reverse Recovery Time -- 240 -- nS VGS=0V,IF=27.5A di/dt=100A/µsQrr Reverse Recovery Charge -- 2.8 -- uC

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 7 Test ircuits and Waveforms

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 7 of 7 Package outline drawing (TO-220F Unit: mm ) Symbol unit(mm) MIN MAX A 9.7 10.4 B 15.5 16.10 B1 8.95 9.40 C 4.40 4.80 C1 2.15 2.55 D 2.50 2.90 E 0.70 0.90 F 0.40 0.60 G 1.12 1.42 H 3.40 4.00 L 12.6 13.6 N 2.34 2.74 Q 3.15 3.55 3.00 3.30