IHW40N65R5_15 INFINEON | Alldatasheet

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ReverseconductingIGBTwithmonolithicbodydiode IHW40N65R5 Datasheet IndustrialPowerControl

Rev.2.3,2015-12-22 Reverse-ConductingIGBTwithmonolithicbodydiode Features:

  • Powerfulmonolithicreverse-conductingdiodewithlowforward voltage
  • TRENCHSTOPTMtechnologyoffers: -verytightparameterdistribution -highruggednessandstabletemperaturebehavior -verylowVCEsatandlowEoff -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat
  • LowEMI
  • QualifiedaccordingtoJESD-022fortargetapplications
  • Pb-freeleadplating;RoHScompliant
  • CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications:
  • Inductioncooking
  • Inverterizedmicrowaveovens
  • Resonantconverters G C E G C E KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package IHW40N65R5 650V 40A 1.35V 175°C H40ER5 PG-TO247-3

Rev.2.3,2015-12-22 TableofContents

Rev.2.3,2015-12-22 MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 80.0 40.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 120.0 A Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs - 120.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 32.0 19.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 120.0 A Gate-emitter voltage VGE ±20 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 230.0 115.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Symbol Conditions Max.Value Unit Characteristic IGBT thermal resistance, junction - case Rth(j-c) 0.65 K/W Diode thermal resistance, junction - case Rth(j-c) 2.85 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W

Rev.2.3,2015-12-22 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=40.0A Tvj=25°C Tvj=175°C 1.35 1.60 1.70 V Diode forward voltage VF VGE=0V,IF=40.0A Tvj=25°C Tvj=175°C 1.70 2.00 2.10 V Gate-emitter threshold voltage VGE(th) IC=0.40mA,VCE=VGE 3.2 4.0 4.8 V Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C 1000 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=40.0A - 96.0 - S Integrated gate resistor rG none Ω ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit DynamicCharacteristic Input capacitance Cies - 4740 - Output capacitance Coes - 44 - Reverse transfer capacitance Cres - 19 - VCE=25V,VGE=0V,f=1MHz pF Gate charge QG VCC=520V,IC=40.0A, VGE=15V - 193.0 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13.0 - nH SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) - 34 - ns Rise time tr - 25 - ns Turn-off delay time td(off) - 260 - ns Fall time tf - 13 - ns Turn-on energy Eon - 1.10 - mJ Turn-off energy Eoff - 0.37 - mJ Total switching energy Ets - 1.47 - mJ Tvj=25°C, VCC=400V,IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω ,RG(off)=10.0Ω , Lσ=70nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery.

Rev.2.3,2015-12-22 DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr - 115 - ns Diode reverse recovery charge Qrr - 2.75 - µC Diode peak reverse recovery current Irrm - 37.2 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -1550 - A/µs Tvj=25°C, VR=400V, IF=40.0A, diF/dt=1000A/µs SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) - 31 - ns Rise time tr - 28 - ns Turn-off delay time td(off) - 300 - ns Fall time tf - 21 - ns Turn-on energy Eon - 1.30 - mJ Turn-off energy Eoff - 0.61 - mJ Total switching energy Ets - 1.91 - mJ Tvj=175°C, VCC=400V,IC=40.0A, VGE=0.0/15.0V, RG(on)=10.0Ω ,RG(off)=10.0Ω , Lσ=70nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr - 142 - ns Diode reverse recovery charge Qrr - 3.80 - µC Diode peak reverse recovery current Irrm - 45.0 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -1550 - A/µs Tvj=175°C, VR=400V, IF=40.0A, diF/dt=1000A/µs

Rev.2.3,2015-12-22

Rev.2.3,2015-12-22 t a b td(off) tf trtd(on) 90% IC 10% IC 90% IC 10% VGE 10% IC t 90% VGE t t 90% VGE VGE(t) t t tt1 t4 2% IC 10% VGE 2% VCE t2 t3 E t t V I toff = x x d CE C E t t V I ton = x x d CE C CC dI /dtF dI I,V Figure A. Figure B. Figure C. Definition of diode switching characteristics Figure E. Dynamic test circuit Figure D. I (t)C Parasitic inductance L , parasitic capacitor C , relief capacitor C , (only for ZVT switching) s s r t t t Q Q Q rr a b rr a b = + = + Q a Qb V (t)CE VGE(t) I (t)C V (t)CE T esting Conditions

Rev.2.3,2015-12-22 RevisionHistory IHW40N65R5 Revision:2015-12-22,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2014-06-13 Preliminary data sheet 1.2 2014-06-16 - 2.1 2014-09-12 Final data sheet 2.2 2014-11-27 Update of diode forward current values 2.3 2015-12-22 Minor change Conditions Static Characteristic Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2015. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.