H3RN8HFP HUIXIN | Alldatasheet

Document overview

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Technical content

Features

  • Low R & FOM( )DS on
  • Extremely low switching loss
  • Excellent reliability and uniformity
  • Fast switching and soft recovery Product Name Package Marking H3RN8HFP LFPAK56E Absolute Maximun Ratings °C( )T =25 unless otherwise specifiedJ Marking Information Parameter V A Unit VDS VGS ID PD T ,TJ STG Symbols Drain-Source Voltage Gate-Source Voltage (1)Continuous Drain Current , T =25°CC (3)Power dissipation , T =25°CC Operating Junction and Storage Temperature ±20 130 520 132 -55 ~ +175 Value V w A Packing Qty. (2)Pulsed drain current , T =25 °CC

130 A(1)Continuous diode forward current , T =25°CC

ID,pulse EAS (5)Single pulsed avalanche energy 205 mJ Thermal Characteristics Parameter UnitSymbols Thermal Resistance from Junction to Case Typ. 0.95 °C/W RθJC RθJA (4)Thermal Resistance from Junction to Ambient IS

520 A(2)Diode pulsed current , T =25°CCIS,pulse

V = 80 VDS ( )R = 3.4 mΩ Max(on)DS ( )I = 130A T =25°CD C Min. Max. LFPAK56E G-Pin4 S-Pin1,2,3 D-Pin5 G S D S S 1 2 3 4 N-Channel MOSFET www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 1 of 5 Applications:

  • PD charger
  • Motor driver
  • Switching voltage regulator
  • DC-DC convertor
  • Switching mode power supply H3RN8HFP

( )Electrical Characteristics T =25 unless otherwise specifiedJ °C Parameter V Unit V(BR)DSS VGS(th) IDSS Ciss Symbols Drain-Source Breakdown Voltage Gate Threshold Voltage Typ. Test Conditions V =0, I =250μAGS D td(on) tf Max.Min. V 2.0 4.0 V =V , I =250μAGS DS D Zero Gate Voltage Drain Current Gate-Source Leakage Current 100 μA V =0, V =±20VDS GSnA±100 Input Capacitance Output Capacitance Reverse Transfer Capacitance pF V =0GS V =25VDS f=100kHz Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time ns V =40VDS V =10VGS I =20AD R =2Ω( )G ext Total Gate Charge Gate to Source Charge ( ) Gate to Drain Miller Charge nC V =40VDS V =10VGS I =20AD μA V =80V, V =0,T =25°CDS GS J1.0 Body Diode Characteristics Parameter Unit VSD Symbols Diode Forward Voltage Typ. Test Conditions V =0, I =20AGS S Max. V =40V R I =20ΑS di/dt=100A/μs ns nCQrr Reverse Recover Time Reverse Recovery Charge Min. V RDS(on) Drain-Source On-State Resistance 2.7 3.4 mΩ V =10V, I =25AGS D IGSS Gate resistanceRG V =80V, V =0,T =125°CDS GS J f =1 MHz, Open drainΩ Coss Crss Gate plateau voltageVplateau V Qg Qgs Qgd tr td(off) 1.0 AIrrm Peak reverse recovery current trr Note ( )1 Calculated continuous current based on maximum allowable junction temperature. ( )2 Repetitive rating; pulse width limited by max. junction temperature. ( ) 3 Pd is based on max. junction temperature, using junction-case thermal resistance. 2( )4 The value of R is measured with the device mounted on 1 in FR-4 board with 2oz. Copper,θJA in a still air environment with T =25 °C.A ( )5 V =50V, V =10 V, L=0.3 mH, starting T =25 °CDD GS J www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 2 of 5 3.2 107 5720 2080 4.4 2.4 138 3.6

Electrical Characteristics Diagrams www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 3 of 5 Fig.1 output characteristicsTypical ( )Drain-Source Voltage-V VDS 0 2 3 7 ( )Drain-Source Current-I AD 100 150 200 4 5 6 T =25°CJ μstp=﹤200 V =10V, 9V, 8V GS 125 175 V =4.5VGS V =5.0VGS V =6.0VGS V =7.0VGS ( )Drain-Source Voltage-V VDS 20 40 60 80 Capacitance ( pF) Fig.2 Typical Capacitance vs. D-S Voltage 110 210 310 410 010 V =0GS f =100kHz Crss Coss Ciss Fig.3 Typical Gate-Charge ( )Gate-Charge-Q nCg ( )Gate-Source Voltage-V VGS 60 80 V =40VDS I =20AD 10 30 50 70 Fig.5 Drain-source on-state resistance On Resistance -R (mΩ)DS(on) -25 75 125 ( )Junction Temperature-T °CJ 17510050250-50 V =10VGS I =25AD 150 Fig.5 Drain-source on-state resistance ( )Drain current-I AD 2001500 ( )On Resistance -R mΩDS(on) 10050 V =6VGS V =8VGS V =5VGSV =4.5VGS V =10VGS Fig.6 Threshold voltage vs. Temperature ( )Threshold voltage-V VGS(th) -25 75 125 ( )Junction Temperature-T °CJ 17510050250-50 150 2.0 2.5 3.0 3.5 4.0 V =VGS DS I =250μAD 1.5 1.0

www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 4 of 5 -25 Fig.8 Drain Current vs. Case Temperature 75 125 175 ( )Case Temperature-T °CC 15010050250 Drain-Source Continupus Current-I (A)D 100 125 150 175 200 T ﹤175°CJ 130 ( )Source-drain voltage -V VSD 0.5 1.0 1.5 2.0 310 ( )Source current- I AS Fig.7 Forward characteristic of body diode T =25°CJ Fig.9 Safe Operating Area ( )Drain-Source Voltage-V VDS ( )Drain-Source Current-I AD 1E3 1E2 1E1 1E0 0.1 10 100 0.01ms DC R LimitedDS(on) 0.1ms 10ms 1ms T =25°CC T =175°CJmax Electrical Characteristics Diagrams Pulse Width-t (sec) Fig10. Typical Characteristics 1E-5 1E-4 1E-3 1E-2 1E-1 1E-2 ( )Thermal Resistance -Z °C/WthJC 1E-1 1E0 Single 0.2 0.1 0.05 0.02 Duty=1 0.5 0.01

Package Information

e E A H D c L b Symbol A 1.120.95 b c D e H E LP Min Nom Max 1.05 0.200 0.500.35 0.40 3.803.40 3.60 0.250.18 0.20 4.704.44 4.59 4.95 5.10

1.27 BSC

6.356.00 6.15 0.850.40 0.62 4.453.90 4.24 L b1 4.453.70 4.21 0.300.23 0.25 5.30 1.300.80 1.05 UNIT: mm LP LFPAK56E ( )Plastic single-ended surface-mounted package LFPAK56E , 4 leads BACK VIEW HEAT-SINK PLANE www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 5 of 5