H3N80D HUIXIN | Alldatasheet

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 Proprietary new planar technology  Low gate charge minimize switching loss  Fast recovery body diode Mechanical Data  Case: TO-252  Molding Compound: UL Flammability Classification Rating 94V-0  Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 TO-252 Thermal Characte ristics Parameter Symbol Value Unit Power Dissipation (TC = 25° C) P D 75 W Thermal Resistance Junction-to-Air R θJA 62 ° C/W Thermal Resistance Junction-to-Case R θJC 1.67 ° C/W Operating Junction Temperature Range T J -55 ~ +150 ° C Storage Temperature Range T STG -55 ~ +150 ° CMaximum Rat ings (@ TC = 25° C unless otherwise specified) Parameter Symbol Value Unit Drain-to-Source Voltage V DSS 800 V Gate-to-Source Voltage V GSS ± 30 V Continuous Drain Current (TC = 25° C) ID 3 A Continuous Drain Current (TC = 100° C) 1.9 A Pulsed Drain Current (VGS = 10V) *1 IDM 12 A Single Pulse Avalanche Energy *3 EAS 120 mJ N-Channel Enhancement Mode MOSFET 6GMK1UL5

Characteristics (@ TJ = 25° C unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics VDSS Drain-Source Breakdown Voltage V GS = 0V, ID = 250μA 800 - - V VDS = 800V, VGS = 0V, TJ = 25° C - - 1 μA VDS = 640V, VGS = 0V, TJ = 125° C - - 100 μA IGSS Gate-Body Leakage Current V GS = ± 30V, VDS = 0V - - ± 100 nA On Characteristics *2 RDS(ON) Static Drain-Source On-resistance VGS = 10V, ID = 2.0A - - 3.8 Ω VGS(th) Gate Threshold Voltage V DS = VGS, ID = 250μA 3 - 4 V gfs Forward Transconductance V DS = 15V, ID = 3A - 5.5 - S Dynamic Characteristics CISS Input Capacitance VGS = 0V VDS = 25V f = 1.0MHz IDSS Zero Gate Voltage Drain Current - 490 - pF COSS Output Capacitance - 25 - CRSS Reverse Transfer Capacitance - 50 - Switching Characteristics td(ON) Turn-on Delay Time VDD = 400V VGS = 10V RG = 12Ω ID = 3A tr Turn-on Rise Time - 10 - td(OFF) Turn-Off Delay Time - 30 - tf Turn-Off Fall Time - 15 - QG Total Gate-Charge VDD =400V VGS = 10V ID = 3A - 16 - QGS Gate to Source Charge - 3 - nC QGD Gate to Drain (Miller) Charge - 6 - Source-Drain Diode Characteristics VSD Diode Forward Voltage *2 I SD = 2A, VGS = 0V - - 1.4 V IS Continuous Source Current - - 3 A ISM Pulsed Source Current - - 12 A trr Reverse Recovery Time IF = 3A, VGS = 0V dIF/dt = 100A/us - 135 - ns Qrr Reverse Recovery Charge - 446 - nC Notes: 1. Repetitive rating; pulse width limited by maximum junction temperature 2. The data tested by pulsed, pulse width ≤ 380μs, duty cycle ≤ 2% 3. L = 10mH, ID = 5.5A, Start TJ = 25°C - 10 - ns 6GMK2UL5

aracteristics Curves (@ TA = 25C unless otherwise specified) Fig 1 Typical Output Characteristics Fig 3 On-Resistance vs. Gate-Source Voltage Fig 2 On-Resistance vs. Drain Current and Gate Voltage Fig 4 Body-Diode Characteristics Fig 5 On-Resistance vs. Junction Temperature Fig 6 Transfer Characteristics 6GMK3UL5

Capacitance Characteristics Fig 9 Normalized Breakdown Voltage vs. Junction Temperature Fig 8 Gate-Charge Characteristics Fig 10 V GS(th) vs. Junction Temperature Fig 1

1 Safe Operation Area

Package Outline Dimensions (Unit: mm) Symbol A 6.50 6.70 A1 5.16 5.46 B 9.77 10.17 B1 6.00 6.20 B2 2.60 3.00 B3 0.70 0.90 C 0.45 0.61 D 2.20 2.40 E 2.186 2.386 F1 0.67 0.87 F2 0.76 0.96 H 0.00 0.30 h 0.00 0.127 L 6.50 6.70 1.10 1.30 Dimensions in Millimeters MIN MAX 6GMK5UL5