H38N10FA HUIXIN | Alldatasheet

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Technical content

Features

  • Low R & FOM( )DS on
  • Extremely low switching loss
  • Excellent reliability and uniformity
  • Fast switching and soft recovery Product Name Package Marking H38N10FA DFN3X3 Absolute Maximun Ratings °C( )T =25 unless otherwise specifiedJ Marking Information Parameter V A Unit VDS VGS ID PD T ,TJ STG Symbols Drain-Source Voltage Gate-Source Voltage (1)Continuous Drain Current , T =25°CC (3)Power dissipation , T =25°CC Operating Junction and Storage Temperature 100 ±20 Value V W A V = 100 VDS ( )R =16 mΩ Max( )DS on I = 38A D ( ) T =25°CC Applications:
  • PD charger
  • Motor driver
  • Switching voltage regulator
  • DC-DC convertor
  • Switching mode power supply www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 5 Package & Pin information Packing Qty. (2)Pulsed drain current , T =25 °CC A(1)Continuous diode forward current , T =25°CC IDM EAS (5)Single pulsed avalanche energy mJ Thermal Characteristics Parameter UnitSymbols Thermal Resistance from Junction to Case Value 2.2 °C/W RθJC RθJA (4)Thermal Resistance from Junction to Ambient IS N-Channel 100 V MOSFET D G S DFN3X3 38N10 S SG S D D D D Pin4-G Pin1 Tape&reel 5000 PCS 152 -55 ~ +150

www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 5 ( )Electrical Characteristics T =25 unless otherwise specifiedJ °C Parameter V Unit V( )BR DSS V ( )GS th IDSS Ciss Symbols Drain-Source Breakdown Voltage Gate Threshold Voltage 100 Typ. Test Conditions V =0, I =250μAGS D td(on) tf Max.Min. V 1.0 2.5 V =V , I =250μAGS DS D Zero Gate Voltage Drain Current Gate-Source Leakage Current -100 nA V =100, V =0VDS GSμA1 Input Capacitance Output Capacitance Reverse Transfer Capacitance 1030 483 pF V =0GS V =25VDS f=100kHz Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time ns V =50VDS 10VV =GS I =25AD 10ΩR ( )=extG Total Gate Charge Gate to Source Charge ( )Gate to Drain Miller Charge nC V =50VDS 10VV =GS I =25AD nA V =20VGS100 Body Diode Characteristics Parameter Unit VSD Symbols Diode Forward Voltage Typ. Test Conditions V =0, I =30AGS S Max. V =50V R I =25ΑS di/dt=400A/μs ns nC Qrr Reverse Recover Time Reverse Recovery Charge 95 Min. V R ( )DS on Drain-Source On-State Resistance 14 16 mΩ V =10V, I =30AGS D IGSS Gate resistanceRG V =-20VGS 1.6 f =1 MHz, Open drainΩ Coss Crss Gate plateau voltageVplateau 3.2 V Qg Qgs Qgd tr td(off) 1.3 AIrrm Peak reverse recovery current 5 trr Note ( )1 Calculated continuous current based on maximum allowable junction temperature. ( )2 Repetitive rating; pulse width limited by max. junction temperature. ( )3 P is based on max. junction temperature, using junction-case thermal resistance.D 2( )4 The value of R is measured with the device mounted on 1 in FR-4 board with 2oz. Copper,θJA in a still air environment with T =25 °C.A ( ) V =50 V,V =10 V, L=0.3 mH, starting T =25 °C.5 DD GS J 17 23 mΩ V =4.5V, I =30AGS D

www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 5 Electrical Characteristics Diagrams Fig.1 Typ. output characteristics ( )Drain-Source Voltage-V VDS 0 2 3 4 ( )Drain-Source Current-I AD 120 T =25°CJ V =5VGS V =3VGS V =4VGS Fig.2 Transfer Characteristic for Various Junction Temperatures Gate-Source Voltage-V (V)GS Drain-Source Current-I (A)D 1086420 Drain-Source Voltage-V (V)DS Capacitance ( pF) Fig.3 Typical Capacitance vs. D-S Voltage 20 40 100 010 210 310 110 60 80 Fig.4 Typical Gate-Charge ( )Gate-Charge-Q nCg 8 16 V =50VDS I =25AD ( )Gate-Source Voltage-V VGS Fig.5 Drain-source on-state resistance ( )On Resistance -R mΩDS(on) ( )Junction Temperature-T °CJ -50 75 125 17515010050250-75 Fig.6 Threshold Voltage 0.8 1.0 -75 ( )Threshold Voltage -V Vth 1.2 1.4 1.6 V =4.5VGS V =3.5VGS V =10VGS V =8VGSV =10VGS -110 V =10VDS T =25°CJ 110 310 410 210 010 V =0VGS f=100kHz Ciss Crss Coss -25 V =10VGS I =30AD ( )Junction Temperature-T °CJ I =250μAD 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175

www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 5 ( )Source-drain voltage -V VSD -110 010 ( )Source current- I AS Fig.8 Forward characteristic of body diode 0.4 110 210 ( )Drain current-I AD 703010 20 40 60 ( )On Resistance -R mΩDS(on) Fig.9 Drain Current vs. Case Temperature 90 150 ( )Case Temperature-T °CC 12060300 ( )Drain-Source Continupus Current-I AD Fig.10 Safe Operating Area ( )Drain-Source Voltage-V VDS ( )Drain-Source Current-I AD Fig.11 Normalized Thermal Transient Impedance Junction-to-Case Rectangular Pulse Duration (sec) Normalized Effective Transient Thermal Impedance Electrical Characteristics Diagrams Fig.7 Drain-source on-state resistance 80 90 110100 120 V =3.5VGS V =4VGS V =4.5VGS V =10VGS V =5VGS V =6.5VGS 310 T =25°CJ 1.6 R LimitedDS(on) 0.01ms 0.1ms 1ms 10ms DC Notes: 1. Duty Factor D=t /t1 2 2. Peak T =P Z TJ DM thJC C× + PDM -310 -210 -110 010 110 -610 -510 -410 -310 -210 -110 010 210110 -110 010 110 210 -110 010 110 210 310 D=1 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse

www.hxkj.hk +86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 5 A B C c K ~12°8° BACK VIEW D 8×b 6×e E L Symbol A 3.403.00 B b C c D E e K MIN NOM MAX 3.20 3.403.20 3.30 0.350.25 0.30 2.552.35 2.45 1.841.64 1.74 0.900.70 0.80 0.200.14 0.16 3.102.90 3.00 3.253.05 3.15 0.750.55 0.65 0.050.00 L 0.550.25 0.42 0.200.10 0.15 UNIT: mm