H380N4HFB HUIXIN | Alldatasheet

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Technical content

Features

  • Low R & FOM( )DS on
  • Extremely low switching loss
  • Excellent reliability and uniformity
  • Fast switching and soft recovery Product Name Package Marking H380N4HFB PDFN5X6 Absolute Maximun Ratings ( )T =25°C unless otherwise specifiedJ Marking Information Parameter V A Unit VDS VGS ID PD ,T TJ STG Symbols Drain-Source Voltage Gate-Source Voltage (1)Continuous Drain Current , T =25°CC (3)Power dissipation , T =25°CC Operating Junction and Storage Temperature ±20 380 900 188 -55 ~ +175 Value V w A V = 40 VDS ( )R = 0.8 mΩ Max( )DS on I = 380A D ( ) T =25°CJ Applications:
  • PD charger
  • Motor driver
  • Switching voltage regulator
  • DC-DC convertor
  • Switching mode power supply Package & Pin information Packing Qty. (2)Pulsed drain current A(1)Continuous diode forward current , T =25°CC EAS (5)Single pulsed avalanche energy 630 mJ Thermal Characteristics Parameter UnitSymbols Thermal Resistance from Junction to Case Value 0.72 °C/W RθJC RθJA (4)Thermal Resistance from Junction to Ambient IS 350 N-Channel 40 V MOSFET D G S PDFN5X6 H380N4HFB S SG D SPin4-G Pin1 ID,pulse www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 1 of 5 Tape&reel 5000 PCS

( )Electrical Characteristics T =25 unless otherwise specifiedJ °C Parameter V Unit V( )BR DSS V ( )GS th IDSS Ciss Symbols Drain-Source Breakdown Voltage Gate Threshold Voltage Typ. Test Conditions V =0, I =250μAGS D td(on) tf Max.Min. V 2.0 4.0 V =V , I =250μAGS DS D Zero Gate Voltage Drain Current Gate-Source Leakage Current 100 μA V =0, V =±20VDS GSnA±100 Input Capacitance Output Capacitance Reverse Transfer Capacitance 5312 1713 pF V =0GS V =20VDS f=100kHz Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time ns V =40VDS V =10VGS I =40AD R ( )=2ΩextG Total Gate Charge Gate to Source Charge ( )Gate to Drain Miller Charge nC V =40VDS V =10VGS I =40AD μA V =40V, V =0,T =25°CDS GS J1 Body Diode Characteristics Parameter Unit VSD Symbols Diode Forward Voltage Typ. Test Conditions V =0, I =30AGS S Max. V =40V R I =40ΑS di/dt=100A/μs ns nC 33.5 Qrr Reverse Recover Time Reverse Recovery Charge 18.8 Min. V R ( )DS on Drain-Source On-State Resistance 0.62 0.8 mΩ V =10V, I =30AGS D IGSS Gate resistanceRG V =40V, V =0,T =125°CDS GS J 2.1 f =1 MHz, Open drainΩ Coss Crss Gate plateau voltageVplateau 4.3 V Qg Qgs Qgd tr td(off) 1.1 AIrrm Peak reverse recovery current 1.1 trr Note ( )1 Calculated continuous current based on maximum allowable junction temperature. ( )2 T =25°C, t =10μs.A p ( )3 Pd is based on max. junction temperature, using junction-case thermal resistance. 2( )4 The value of R is measured with the device mounted on 6 in FR-4 board with 2oz. Copper,θJA in a still air environment with T =25°C.A ( )5 V =50V, V =10V, L=0.3 mH, starting T =25°CDD GS J www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 2 of 5

Electrical Characteristics Diagrams Fig.2 Transfer Characteristic ( )Gate-Source Voltage-V VGS ( )Drain-Source Current-I AD T =25°CJ V =10VDS 2 4 10 010 210 310 110 6 8 -110 -210 Fig.4 Typical Gate-Charge ( )Gate-Charge-Q nCg V =40VDS I =40AD ( )Gate-Source Voltage-V VGS 60 80 Fig.5 Drain-source on-state resistance ( )On Resistance -R mΩDS(on) ( )Junction Temperature-T °CJ -25 75 125 17515010050250-50 V =10VGS I =30AD 0.3 0.6 0.9 1.2 1.5 ( )Drain current-I AD 160 ( )On Resistance -R mΩDS(on) 240 400 480320 Fig.6 Drain-source on-state resistance V =10VGS V =6VGS V =5.5VGS V =5VGS Fig.1 Typ. output characteristics ( )Drain-Source Voltage-V VDS 0 2 3 4 5 ( )Drain-Source Current-I AD 100 400 500 V =4.5VGS V =5VGSV =10VGS 200 300 T =25°CJ ( )Drain-Source Voltage-V VDS Capacitance (pF) Fig.3 Typical Capacitance vs. D-S Voltage 10 200 210 310 410 30 40 110 V =0GS f =100kHz Coss Ciss Crss www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 3 of 5

Electrical Characteristics Diagrams ( )Source-drain voltage -V VSD -110 010 ( )Source current- I AS 0.5 110 210 310 Fig.7 Forward characteristic of body diode T =25°CJ 75 125 175 ( )Case Temperature-T °CC 15010050250 ( )Drain-Source Continupus Current-I AD 100 150 200 250 300 350 400 Fig.8 Drain Current vs. Case Temperature 380 Fig.9 Safe Operating Area ( )Drain-Source Voltage-V VDS ( )Drain-Source Current-I AD 10.1 10 100 010 110 210 310 R LimitedDS(on) 0.1ms 0.01ms 1ms 10ms DC Fig.10 Thermal Transient Impedance Junction-to-Case Rectangular Pulse Duration (sec) ( )Transient Thermal Impedance-Z °C/WthJC 1E-41E-5 1E-3 1E-2 1E-1 1E0 010 -110 -210 -310 Single Pulse Notes: 1. Duty Factor D=t /t1 2 2. Peak T =P Z TJ DM thJC C× + PDM D=1 0.5 0.2 0.1 0.05 0.02 0.01 www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 4 of 5

c Package outline dimension A K L b e 6× Unit：mm Symbol Nom Max Min A 0.90 1.10 1.20 b 0.30 0.40 0.50 c 0.17 0.25 0.32 D 4.8 4.95 5.1 D1 4.9 5.1 5.4 D2 3.8 4.0 4.2 5.6 5.8 6.0 E1 5.9 6.1 6.3 E2 3.4 3.7 3.9 K 1.2 1.3 1.4 E A1 0.00 0.05

1.27 BSC e

L 0.4 0.6 0.7 L1 0.10 0.16 0.25 D E PDFN5X6 BACK VIEW www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 5 of 5