H36P6D HUIXIN | Alldatasheet

Document overview

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Technical content

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 6 H36P6D 60V Single P-Channel MOSFET Features:

  • Fast switching speed
  • 100% avalanche tested
  • Improved dv/dt capability
  • Enhanced Avalanche Ruggedness
  • Lead Free Applications:
  • Load Switch
  • PWM Applications
  • Power Managment

Ordering Information

Part Number Package Marking Packing Qty. H36P6D TO-252 H36P6D Tape&reel 2500 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-to-Source Voltage -60 V VGS Gate- to- Source Voltage ±20 V ID Continuous Drain Current TC=25℃ -36 AContinuous Drain Current TC=100℃ -25.5 IDM Pulsed Drain Current -144 PD Power Dissipation 79 W EAS Single Pulse Avalanche Engergy L = 0.5mH, RG = 25 Ω,TC=25℃ 196 mJ TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 ℃ Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case -- 1.9 ℃/ W RθJA Thermal Resistance Junction-Ambient -- 50 ℃/ W VDSS RDS(ON)(Typ ) ID -60V 23mΩ -36A

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 6 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage -60 -- -- V VGS=0V,ID=-250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- 1 µA VDS=-60V,VGS=0V IGSS Gate to Source Forward Leakage -- -- 100 nA VGS=-20V ,VDS=0V Gate to Source Reverse Leakage -- -- -100 VGS=20V ,VDS=0V VGS(TH) Gate Threshold Voltage -1 -1.8 -2.5 V VGS=VDS,ID=-250µA RDS(on) Static Drain- to- Source On- Resistance(Note*2) -- 23 28 mΩ VGS=-10V,ID=-15A -- 30 39 mΩ VGS=-4.5V,ID=-10A Dynamic Electrical Characteristics Ciss Input Capacitance -- 4000 -- pF VGS=0V VDS=-25V f=1MHz Coss Output Capacitance -- 134 -- Crss Reverse Transfer Capacitance -- 98 -- Qg Total Gate Charge -- 54 -- nC VDS=-30V ID=-20A VGS=-10V Qgs Gate- to- Source Charge -- 10.5 -- Qgd Gate-to-Drain(" Miller") Charge -- 13 -- Switching Characteristics td(ON) Turn- on Delay Time -- 12 -- nS VDS=-30V RL=1.5Ω RG=3Ω VGS=-10V trise Rise Time -- 10 td(OFF) Turn- OFF Delay Time -- 64 -- tfall Fall Time -- 14 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- -- -1.2 V IF=-15A,VGS=0V trr Reverse Recovery Time -- 26 -- nS IF=-20A di/dt=100A/µsQrr Reverse Recovery Charge -- 29 -- nC

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 6 Test ircuits and Waveforms

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 6 Package outline drawing (TO-252 Unit: mm )