H360N10HFD HUIXIN | Alldatasheet

Document overview

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Technical content

Features

  • Low R & FOM( )DS on
  • Extremely low switching loss
  • Excellent reliability and uniformity
  • Fast switching and soft recovery Product Name Package Marking H360N10HFD TOLL Absolute Maximun Ratings °C(T =25 unless otherwise specified)J Marking Information Parameter V A Unit VDS VGS ID PD T ,TJ STG Symbols Drain-Source Voltage Gate-Source Voltage (1)Continuous Drain Current , T =25°CC (3)Power dissipation , T =25°CC Operating Junction and Storage Temperature 100 ±20 360 1200 600 -55 ~ +175 Value V w A V = 100 VDS ( )R =1.2mΩ Typ(on)DS I = 1200A D,pulse Q = 134nCg Applications:
  • PD charger
  • Motor driver
  • Switching voltage regulator
  • DC-DC convertor
  • Switching mode power supply www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 1 of 5 Package & Pin information D-Pin9 G-Pin1 S-Pin2,3,5,6,7,8 Packing Qty. (2)Pulsed drain current , T =25 °CC A(1)Continuous diode forward current , T =25°CC ID,pulse EAS (5)Single pulsed avalanche energy 540 mJ Thermal Characteristics Parameter Unit Thermal Resistance from Junction to Case Value 0.25 °C/W 62(4)Thermal Resistance from Junction to Ambient IS A(2)Diode pulsed current , T =25 °CCIS,pulse 1 2 3 4 5 6 7 8 D G S S S S S S S TOLL 360 1200 H360N10HFD Tape&reel 1200 PCS N-Channel Power MOSFET Symbols RθJC RθJA

Electrical Characteristics (T =25 unless otherwise specified)J °C Parameter V Unit V(BR)DSS VGS(th) IDSS Ciss Symbols Drain-Source Breakdown Voltage Gate Threshold Voltage 100 Typ. Test Conditions V =0, I =250μAGS D td(on) tf Max.Min. V 2.0 4.0 V =V , I =250μAGS DS D Zero Gate Voltage Drain Current Gate-Source Leakage Current 100 μA V =0, V =±20VDS GSnA±100 312 Input Capacitance Output Capacitance Reverse Transfer Capacitance 9750 5450 pF V =0GS V =25VDS f=100kHz Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time ns V =50VDS 10VV =GS I =25AD 2ΩR =G(ext) Total Gate Charge Gate to Source Charge Gate to Drain (Miller) Charge 134 nC V =50VDS 10VV =GS I =25AD μA V =100V, V =0,T =25°CDS GS J1.0 Body Diode Characteristics Parameter Unit VSD Symbols Diode Forward Voltage Typ. Test Conditions V =0, I =30AGS S Max. V =50V R I =25ΑS di/dt=100A/μs ns nC 138 Qrr Reverse Recover Time Reverse Recovery Charge 247 Min. V RDS(on) Drain-Source On-State Resistance 1.2 1.5 mΩ V =10V, I =50AGS D IGSS Gate resistanceRG V =100V, V =0,T =100°CDS GS J 1 f =1 MHz, Open drainΩ Coss Crss Gate plateau voltageVplateau 4.4 V Qg Qgs Qgd tr td(off) 1.3 AIrrm Peak reverse recovery current 3.3 trr Note (1) Calculated continuous current based on maximum allowable junction temperature. (2) Repetitive rating; pulse width limited by max. junction temperature. (3) Pd is based on max. junction temperature, using junction-case thermal resistance. 2(4) The value of R is measured with the device mounted on 1 in FR-4 board with 2oz. Copper,θJA in a still air environment with T =25 °C.A (5) V =50V,V =10 V, L=0.3 mH, starting T =25 °CDD GS j www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 2 of 5

Electrical Characteristics Diagrams Fig1. Typ. output characteristics Drain-Source Voltage-V (V)DS 200 0 4 6 8 10 T =25°CJ Drain-Source Current-I (A)D V =5VGS 100 300 400 500 V =4.5VGS V =10VGS V =5.5VGS 5 6 7 8 100 1000 Fig2. Typ. transfer characteristics Drain-Source Current-I (A)D Gate-Source Voltage-V (V)GS V =10VDS T =25°CJ Fig4. Typical Gate-Charge Gate-Charge-Q (nC)g 100 1501257525 V =50VDS I =25AD Gate-Source Voltage-V (V)GS -25 Fig5. Drain-source breakdown voltage 75 125 175 Junction Temperature-T (°C)J 15010050250-50 106 100 102 104 Drain-source breakdown voltage -V (V)(BR)DSS I =250μAD V =0GS Drain-Source Voltage-V (V)DS 20 40 60 80 100 110 210 310 410 Capacitance ( pF) Fig3. Typical Capacitance vs. Drain-to-Source Voltage V =0GS f =100kHz Coss Ciss Crss Fig6. Drain-source on-state resistance On Resistance -R (mΩ)DS(on) Junction Temperature-T (°C)J -25 75 125 17515010050250-50 V =10VGS I =50AD 0.5 1.0 1.5 2.0 2.5 www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 3 of 5

Source-drain voltage -V (V)SD 110 310 Source current- I (A)S Fig8. Forward characteristic of body diode T =25°CJ Fig9. Drain-source on-state resistance 500 Drain current-I (A)D 4003001000 On Resistance -R (mΩ)DS(on) 200 V =5VGS V =5.5VGS V =10VGS V =6VGS -25 Fig7. Threshold voltage 75 125 175 Junction Temperature-T (°C)J 15010050250-50 Threshold voltage-V (V)GS(th) I =250μAD 200 Fig10. Drain Current vs. Case Temperature 75 125 175 Case Temperature-T (°C)C 15010050250 100 200 350 400 150 250 300 Drain-Source Continupus Current-I (A)D 200 Limited by package Fig11. Safe Operating Area Drain-Source Voltage-V (V)DS Drain-Source Current-I (A)D T =25°CC T =175°CJmax 1E3 1E2 1E1 1E0 1E-1 0.1 10 100 400 0.1ms 0.01ms 1ms 10ms DC R LimitedDS(on) Fig12. Max. transient thermal impedance Rectangular Pulse Duration (sec) 1E-4 1E-3 1E-2 1E-1 1E0 Thermal Response-Z (°C/W)thJC 1E-5 1E-3 1E-2 1E-1 1E0 D=1 0.02 0.05 0.5 0.2 0.1 Single Pulse 0.01 Duty=t /Tp www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 4 of 5 Electrical Characteristics Diagrams

E L1 A D L2 b(1,8pin) e e´(2~7pin spacing) b´(2~7pin) e 1 2 3 4 5 6 7 8 A c H L b´(2~7pin) 1 2 3 4 5 6 7 8

Package Information

A 2.452.15 b C E H MIN NOM MAX 2.30 0.850.75 0.75 0.800.70 0.70 9.959.65 9.80 0.600.45 0.50 3.453.15 3.30 9.70 9.90

1.20 BSC

4.704.40 4.55 8.257.95 8.10 e 11.8811.48 11.68 0.900.50 0.70 UNIT: mm D 10.5810.18 10.38 L L2 0.720.48 0.60 L4 1.301.00 1.15 10.10

1.225 BSC

7.106.80 6.95 2.001.60 1.80 www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 5 of 5