H35N25HT HUIXIN | Alldatasheet

Document overview

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Technical content

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 6 H35N25HT 250V SGT N-Channel MOSFET Features:

  • Fast switching speed
  • 100% avalanche tested
  • Improved dv/dt capability
  • Enhanced Avalanche Ruggedness
  • Lead Free Applications:
  • Synchronous Rectification in SMPS
  • Hard Switching and High Speed Circuit
  • Power Managment
  • Load Switch

Ordering Information

Part Number Package Marking Packing Qty. H35N25HT H35N25HTO-220 T Tube 50 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-to-Source Voltage 250 V VGS Gate- to- Source Voltage ±20 V ID Continuous Drain Current TC=25℃ 35 AContinuous Drain Current TC=100℃ 25 IDM Pulsed Drain Current 110 PD Power Dissipation 214 W EAS Single Pulse Avalanche Engergy L = 0.5mH, RG = 25 Ω,TC=25℃ 112 mJ TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case -- 0.7 ℃/ W RθJA Thermal Resistance Junction-Ambient -- 60 ℃/ W VDSS RDS(ON)(Typ ) ID 250V 50mΩ 35A

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 6 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage 250 -- -- V VGS=0V,ID=250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- 1 µA VDS=250V,VGS=0V IGSS Gate to Source Forward Leakage -- -- 100 nA VGS=25V ,VDS=0V Gate to Source Reverse Leakage -- -- -100 VGS=-20V ,VDS=0V VGS(TH) Gate Threshold Voltage 2 3 4 V VGS=VDS,ID=250µA RDS(on) Static Drain- to- Source On- Resistance -- 50 64 mΩ VGS=10V,ID=10A Dynamic Electrical Characteristics Ciss Input Capacitance -- 1584 -- pF VGS=0V VDS=100V f=1MHz Coss Output Capacitance -- 104 -- Crss Reverse Transfer Capacitance -- 7.6 -- Rg Gate Resistance -- 4.4 -- Ω f=1MHz Qg Total Gate Charge -- 20 -- nC VDS=125V ID=10A VGS=10V Qgs Gate- to- Source Charge -- 7 -- Qgd Gate-to-Drain(" Miller") Charge -- 3 -- Switching Characteristics td(ON) Turn- on Delay Time -- 13 -- nS VDS=125V ID=10A RG=10Ω VGS=10V trise Rise Time -- 18 -- td(OFF) Turn- OFF Delay Time -- 25 -- tfall Fall Time -- 10 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- -- 1.2 V IF=10A,VGS=0V trr Reverse Recovery Time -- 110 -- nS VR=125V,IF=10A di/dt=100A/µsQrr Reverse Recovery Charge -- 440 -- nC Notes: * 1. Repetitive rating, pulse width limited by maximum junction temperature. * 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 6 Test ircuits and Waveforms

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 6 Package outline drawing TO-220 Unit: mm ) Symbol unit(mm) MIN MAX A 9.96 10.4 B 14.7 16.0 B1 8.82 9.60 C 4.24 4.67 C1 2.28 2.88 D 1.15 1.40 E 0.70 0.90 F 0.40 0.60 G 1.20 1.75 H 3.20 4.00 L 12.95 13.97 N 2.34 2.74 Q 2.44 3.04 3.74 3.94