H33N6D HUIXIN | Alldatasheet

Document overview

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Technical content

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 6 H33N6D 60V Single N-Channel MOSFET Features:

  • Fast switching speed
  • 100% avalanche tested
  • Improved dv/dt capability
  • Enhanced Avalanche Ruggedness
  • Lead Free Applications:
  • Synchronous Rectification in SMPS
  • Hard Switching and High Speed Circuit
  • Power Tools
  • UPS
  • Motor Control

Ordering Information

Part Number Package Marking Packing Qty. H33N6D TO-252 H33N6D Tape&reel 2500 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-to-Source Voltage 60 V VGS Gate- to- Source Voltage ±20 V ID Continuous Drain Current TC=25℃ 33 AContinuous Drain Current TC=100℃ 23 IDM Pulsed Drain Current 60 PD Power Dissipation 60 W EAS Single Pulse Avalanche Engergy L = 0.5mH, RG = 25 Ω,TC=25℃ 45 mJ TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case -- 2.5 ℃/ W RθJA Thermal Resistance Junction-Ambient -- 60 ℃/ W VDSS RDS(ON)(Typ ) ID 60V 15.5mΩ 33A

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 6 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage 60 -- -- V VGS=0V,ID=250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- 1 µA VDS=60V,VGS=0V Zero Gate Voltage Drain Current (100℃) -- -- 100 µA VDS=60V,VGS=0V IGSS Gate to Source Forward Leakage -- -- 100 nA VGS=20V ,VDS=0V Gate to Source Reverse Leakage -- -- -100 VGS=-20V ,VDS=0V VGS(TH) Gate Threshold Voltage 1.1 1.6 2.1 V VGS=VDS,ID=250µA RDS(on) Static Drain- to- Source On- Resistance -- 15.5 23 mΩ VGS=10V,ID=20A -- 18.5 25 mΩ VGS=10V,ID=20A Dynamic Electrical Characteristics Ciss Input Capacitance -- 2785 -- pF VGS=0V VDS=30V f=1MHz Coss Output Capacitance -- 105 -- Crss Reverse Transfer Capacitance -- 86 -- Rg Gate Resistance -- 1.5 -- Ω f=1MHz Qg Total Gate Charge -- 57 -- nC VDS=30V ID=20A VGS=10V Qgs Gate- to- Source Charge -- 13 -- Qgd Gate-to-Drain(" Miller") Charge -- 9 -- Switching Characteristics td(ON) Turn- on Delay Time -- 10 -- nS VDS=30V VGS=10V RG=3Ω trise Rise Time -- 43 -- td(OFF) Turn- OFF Delay Time -- 44 -- tfall Fall Time -- 60 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- -- 1 V IF=4.1A,VGS=0V trr Reverse Recovery Time -- 26 -- nS IF=20A di/dt=100A/µsQrr Reverse Recovery Charge -- 16 -- nC

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 6 Typical Characteristics Figure 1：On-Region Characteristics (Note E) Figure 2 Transfer Characteristics (Note E) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Figure 4: On-Resistance vs. Junction Temperature (Note E) Figure 6: Body-Diode Characteristics (Note E)

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 6 Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics Figure 9: Maximum Forward Biased Safe Operating Area Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 6 Test ircuits and Waveforms

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 6 Package outline drawing (TO-252 Unit: mm )