H31N10D HUIXIN | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 6 H31N10D 100V SGT N-Channel MOSFET Features:
- Fast switching speed
- 100% avalanche tested
- Improved dv/dt capability
- Enhanced Avalanche Ruggedness
- Lead Free Applications:
- Synchronous Rectification in SMPS
- Hard Switching and High Speed Circuit
- Power Tools
- UPS
- Motor Control
Ordering Information
Part Number Package Marking Packing Qty. H31N10D TO-252 H31N10D Tape&reel 2500 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-to-Source Voltage 100 V VGS Gate- to- Source Voltage ±20 V ID Continuous Drain Current TC=25℃ 31 AContinuous Drain Current TC=100℃ 22 IDM Pulsed Drain Current 80 PD Power Dissipation 52 W EAS Single Pulse Avalanche Engergy L = 0.1mH, RG = 25 Ω,TC=25℃ 5 mJ TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 ℃ Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case -- 2.9 ℃/ W RθJA Thermal Resistance Junction-Ambient -- 50 ℃/ W VDSS RDS(ON)(Typ ) ID 100V 21.5mΩ 31A
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 6 Electrical Characteristics ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain- Source Breakdown Voltage 100 -- -- V VGS=0V,ID=250µA IDSS Zero Gate Voltage Drain Current (25℃) -- -- 1 µA VDS=100V,VGS=0V Zero Gate Voltage Drain Current (100℃) -- -- 100 µA VDS=100V,VGS=0V IGSS Gate to Source Forward Leakage -- -- 100 nA VGS=20V ,VDS=0V Gate to Source Reverse Leakage -- -- -100 VGS=-20V ,VDS=0V VGS(TH) Gate Threshold Voltage 1.4 1.6 2.4 V VGS=VDS,ID=250µA RDS(on) Static Drain- to- Source On- Resistance -- 21.5 25 mΩ VGS=10V,ID=10A -- 28 35 mΩ VGS=4.5V,ID=7A Dynamic Electrical Characteristics Ciss Input Capacitance -- 596 -- pF VGS=0V VDS=50V f=1MHz Coss Output Capacitance -- 117 Crss Reverse Transfer Capacitance -- 6.6 -- Rg Gate Resistance -- 1.8 -- Ω f=1MHz Qg Total Gate Charge -- 12 -- nC VDS=50V ID=10A VGS=10V Qgs Gate- to- Source Charge -- 1.6 -- Qgd Gate-to-Drain(" Miller") Charge -- 3.4 Switching Characteristics td(ON) Turn- on Delay Time -- 6 -- nS VDS=50V ID=10A VGS=10V RG=10Ω trise Rise Time -- 3 -- td(OFF) Turn- OFF Delay Time -- 11 -- tfall Fall Time -- 3 -- Source- Drain Diode Characteristics VSD Diode Forward Voltage -- 0.9 1.2 V IF=10A,VGS=0V trr Reverse Recovery Time -- 28 -- nS VR=50V,IF=10A di/dt=500A/µsQrr Reverse Recovery Charge -- 91 -- nC Notes: * 1. Repetitive rating, pulse width limited by maximum junction temperature. * 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 5 of 6 Test ircuits and Waveforms
+86-769-22857832 huixin@hxkj.hk Rev.01 Page 6 of 6 Package outline drawing (TO-252 Unit: mm )