H30T65DC HUIXIN | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 9 H30T65DC Trench Gate IGBT Features:

  • 650V trench gate/field termination process
  • Very low Vce(sat)
  • Low switching loss
  • Positive temperature coefficient in Vce(sat)
  • Lead Free Applications:
  • EV Charging
  • Uninterruptible Power Supply (UPS)
  • Inverters
  • Load Switch

Ordering Information

Part Number Package Marking Packing Qty. H30T65DC T0-263 H30T65DC Tube 800 PCS Absolute Maximun Ratings (Tc= 2 5℃unless otherwise specified) Symbol Parameter Rating Units VCES Collector-Emitter Voltage 650 V VGES Gate- Emitter Voltage ±30 V IC Continuous DC collector current TC = 25 °C 60 AContinuous DC collector current TC = 100 °C 30 ICm Pulsed collector current TC = 25°C 90 A IF Diode Continuous Forward Current TC = 25 °C 60 ADiode Continuous Forward Current TC = 100 °C 30 IFm Diode Maximum Forward Current TC = 25°C 90 A PD Total Power Dissipation @ TC = 25°C 150 W Tstg Operating Junction and Storage Temperature Range -55 to175 °C TL Maximum Temperature for Soldering 260 °C VCES Vce(sat ) IF 650V 1.65V 30A

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 9 Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance Junction-Case for IGBT 1.0 -- ℃/ W RθJC Thermal Resistance Junction-Case for Diode 1.0 -- ℃/ W RθJA Thermal Resistance Junction-Ambient 40 -- ℃/ W Electrical Characteristics of the IGBT ( TJ= 25℃unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Test Conditions Static Characteristics V(BR)CES Collector-Emitter Breakdown Voltage 650 - -- V VGE=0V,ICE=250uA ICES Collector-Emitter Leakage Current - - 40 uA VGE =0V, VCE=600V IGES(F) Gate to Emitter Leakage current - - 200 nA VGE=+30V, VCE=0V IGES(R) Gate to Emitter Leakage current - - -200 nA VGE=-30V, VCE=0V VCE(sat) Collector-Emitter Saturation Voltage - 2.01.65 5 V IC=30A,VGE=15V VGE(th) Gate Threshold Voltage 4.7 5.5 6.2 V IC=1mA,VCE=VGE Dynamic Characteristics Cies Input Capacitance - 1446 -- PF VCE=25V, VGE=0V, f=1MHz Coes Output Capacitance - 64 -- Cres Reverse Transfer Capacitance - 15 --

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 9 Symbol Parameter Min. Typ. Max. Units Test Conditions Switching Characteristics td(ON) Turn-on Delay Time - 13 -- ns VCE=400V, IC=30A, VGE=15V, Rg=5Ω, Tj=25°C Inductive Load tr Rise Time - 9 -- td(OFF) Turn-Off Delay Time - 68 -- tf Fall Time - 57 -- Eon Turn-On Switching Loss - 0.53 -- mJEoff Turn-Off Switching Loss - 0.48 -- Ets Total- Switching Loss - 1.01 -- Qg Total Gate Charge - 66 -- nC IC = 30 A, VGE = 15 V, VCE =520 V Qge Gate- to- Emitter Charge - 18 -- Qgc Gate-to-Collector Charge - 27 -- Electrical Characteristics of the DIODE ( TJ= 25℃unless otherwise specified) VF Diode Forward Voltage - 2.2 2.9 V IF=30A Trr Reverse Recovery time - 145 - nS IF=15A di/dt=200A/µsIrrm Reverse Recovery Current - 4.2 - A Qrr Reverse Recovery Charge - 326 - nC Trr Reverse Recovery time - 158 - nS IF=30A di/dt=200A/µsIrrm Reverse Recovery Current - 4.5 - A Qrr Reverse Recovery Charge - 374 - nC

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 9 of 9 Package Dimension BACK VIEW HEAT-SINK PLANE E D H e L1 A Symbol A 4.754.35 b c D E e L MIN NOM MAX 4.55 0.940.69 0.85 0.600.30 0.50 1.401.14 1.27 9.028.51 8.75 10.49.80 10.0 8.25

5.08 BSC

H 15.7 14.9 15.3 2.792.10 2.45 1.651.00 1.35 UNIT: mm D1 7.50 L A c b 8.808.57 8.007.75 TO-263 package outline dimension