IHW30N160R5 INFINEON | Alldatasheet

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Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.2 www.infineon.com 2019-09-19 IHW30N160R5 ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode Features:

  • Powerfulmonolithicbodydiodewithlowforwardvoltage
  • TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat
  • LowEMI
  • Pb-freeleadplating;RoHScompliant;halogenfree(according IEC61249-2-21)
  • CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ PotentialApplications:
  • InductionCooking
  • MicrowaveOvens ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttests ofJEDEC47/20/22 G C E G C E KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package IHW30N160R5 1600V 30A 1.85V 175°C H30SR5 PG-TO247-3

Datasheet 2 V2.2 2019-09-19 IHW30N160R5 ResonantSwitchingSeries TableofContents

Datasheet 3 V2.2 2019-09-19 IHW30N160R5 ResonantSwitchingSeries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 1600 V DCcollectorcurrent,limitedbyTvjmax Tc=25°C Tc=100°C IC 60.0 39.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 90.0 A Non repetitive peak collector current1) ICSM 200 A Turn off safe operating area VCE≤1600V,Tvj≤150°C,tp=1µs2) - 90.0 A Diodeforwardcurrent,limitedbyTvjmax Tc=25°C Tc=100°C IF 55.0 36.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 90.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±25 V PowerdissipationTc=25°C PowerdissipationTc=100°C Ptot 263.0 131.5 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+175 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Value min. typ. max. Parameter Symbol Conditions Unit RthCharacteristics IGBT thermal resistance, junction - case Rth(j-c) - - 0.57 K/W Diode thermal resistance, junction - case Rth(j-c) - - 0.57 K/W Thermal resistance junction - ambient Rth(j-a) - - 40 K/W 1) capacitor charging saturation current limited by Tvjmax < 175°C and tp < 3µs 2) dV/dt < 1kV/µs

Datasheet 4 V2.2 2019-09-19 IHW30N160R5 ResonantSwitchingSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1600 - - V Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=30.0A Tvj=25°C Tvj=125°C Tvj=175°C 1.85 2.20 2.40 2.15 V Diode forward voltage VF VGE=0V,IF=30.0A Tvj=25°C Tvj=125°C Tvj=175°C 2.00 2.40 2.60 2.30 V Gate-emitter threshold voltage VGE(th) IC=0.75mA,VCE=VGE 4.5 5.1 5.8 V Zero gate voltage collector current ICES VCE=1600V,VGE=0V Tvj=25°C Tvj=175°C 800 100 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=30.0A - 20.5 - S ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit DynamicCharacteristic Input capacitance Cies - 1500 - Output capacitance Coes - 42 - Reverse transfer capacitance Cres - 38 - VCE=25V,VGE=0V,f=1MHz pF Gate charge QG VCC=1280V,IC=30.0A, VGE=15V - 205.0 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13.0 - nH SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=25°C Turn-off delay time td(off) - 290 - ns Fall time tf - 47 - ns Turn-off energy Eoff - 2.00 - mJ Tvj=25°C, VCC=600V,IC=30.0A, VGE=0.0/15.0V, RG(on)=10.0Ω ,RG(off)=10.0Ω , Lσ=175nH,Cσ=40pF Lσ,CσfromFig.E Energy losses include “tail” according Figure B. (Test circuit Figure E). Turn-off energy, soft switching Eoff dv/dt=300.0V/µs - 0.35 - mJ

Datasheet 5 V2.2 2019-09-19 IHW30N160R5 ResonantSwitchingSeries SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=175°C Turn-off delay time td(off) - 330 - ns Fall time tf - 81 - ns Turn-off energy Eoff - 3.00 - mJ Tvj=175°C, VCC=600V,IC=30.0A, VGE=0.0/15.0V, RG(on)=10.0Ω ,RG(off)=10.0Ω , Lσ=175nH,Cσ=40pF Lσ,CσfromFig.E Energy losses include “tail” according Figure B. (Test circuit Figure E). Turn-off energy, soft switching Eoff dv/dt=300.0V/µs - 1.27 - mJ

Datasheet 12 V2.2 2019-09-19 IHW30N160R5 ResonantSwitchingSeries

Datasheet 13 V2.2 2019-09-19 IHW30N160R5 ResonantSwitchingSeries t a b td(off) tf trtd(on) 90% IC 10% IC 90% IC 10% VGE 10% IC t 90% VGE t t 90% VGE VGE(t) t t tt1 t4 2% IC 10% VGE 2% VCE t2 t3 E t t V I toff = x x d CE C E t t V I ton = x x d CE C CC dI /dtF dI I,V Figure A. Figure B. Figure C. Definition of diode switching characteristics Figure E. Dynamic test circuit Figure D. I (t)C Parasitic inductance L , parasitic capacitor C , relief capacitor C , (only for ZVT switching) s s r t t t Q Q Q rr a b rr a b = + = + Q a Qb V (t)CE VGE(t) I (t)C V (t)CE T esting Conditions

Datasheet 14 V2.2 2019-09-19 IHW30N160R5 ResonantSwitchingSeries RevisionHistory IHW30N160R5 Revision:2019-09-19,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2018-08-28 Final Data Sheet 2.2 2019-09-19 additional parameter in maximum ratings table: non repetitive peak collector current

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